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Register a new userSuperscreening by a Retroreflected Hole Backflow in Tomographic Electron Fluids
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Electron hydrodynamics gives rise to surprising correlated behaviors in which electrons cooperate to quench dissipation and reduce the electric fields needed to sustain the flow. Such collective free flows are usually expected at the hydrodynamic lengthscales exceeding the electron-electron scattering mean free path $ell_{rm ee}$. Here we predict that in two-dimensional electron gases the collective free flows actually occur at the distances much smaller than $ell_{rm ee}$, in a nominally ballistic regime. The sub-$ell_{rm ee}$ free flows arise due to retroreflected holes originating from head-on electron electron collisions, which retrace the paths of impinging electrons and cancel out their potential. An exact solution, obtained in Corbino geometry, predicts potential strongly screened by the hole backflow. Screened potential is described by a fractional power law $r^{-5/3}$ over a wide range of $r$ values, from macroscales down to deep sub-$ell_{rm ee}$ scales, and a distinct non-Fermi-liquid temperature dependence.
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Fermi gases in two dimensions display a surprising collective behavior originating from the head-on carrier collisions. The head-on processes dominate angular relaxation at not-too-high temperatures $Tll T_F$ owing to the interplay of Pauli blocking and momentum conservation. As a result, a large family of excitations emerges, associated with the odd-parity harmonics of momentum distribution and having exceptionally long lifetimes. This leads to tomographic dynamics: fast 1D spatial diffusion along the unchanging velocity direction accompanied by a slow angular dynamics that gradually randomizes velocity orientation. The tomographic regime features an unusual hierarchy of time scales and scale-dependent transport coefficients with nontrivial fractional scaling dimensions, leading to fractional-power current flow profiles and unusual conductance scaling vs. sample width.
Optical and electronic phenomena in solids arise from the behaviour of electrons and holes (unoccupied states in a filled electron sea). Electron-hole symmetry can often be invoked as a simplifying description, which states that electrons with energy above the Fermi sea behave the same as holes below the Fermi energy. In semiconductors, however, electron-hole symmetry is generally absent since the energy band structure of the conduction band differs from the valence band. Here we report on measurements of the discrete, quantized-energy spectrum of electrons and holes in a semiconducting carbon nanotube. Through a gate, an individual nanotube is filled controllably with a precise number of either electrons or holes, starting from one. The discrete excitation spectrum for a nanotube with N holes is strikingly similar to the corresponding spectrum for N electrons. This observation of near perfect electron-hole symmetry demonstrates for the first time that a semiconducting nanotube can be free of charged impurities, even in the limit of few-electrons or holes. We furthermore find an anomalously small Zeeman spin splitting and an excitation spectrum indicating strong electron-electron interactions.
We consider ground state of electron-hole graphene bilayer composed of two independently doped graphene layers when a condensate of spatially separated electron-hole pairs is formed. In the weak coupling regime the pairing affects only conduction band of electron-doped layer and valence band of hole-doped layer, thus the ground state is similar to ordinary BCS condensate. At strong coupling, an ultrarelativistic character of electron dynamics reveals and the bands which are remote from Fermi surfaces (valence band of electron-doped layer and conduction band of hole-doped layer) are also affected by the pairing. The analysis of instability of unpaired state shows that s-wave pairing with band-diagonal condensate structure, described by two gaps, is preferable. A relative phase of the gaps is fixed, however at weak coupling this fixation diminishes allowing gapped and soliton-like excitations. The coupled self-consistent gap equations for these two gaps are solved at zero temperature in the constant-gap approximation and in the approximation of separable potential. It is shown that, if characteristic width of the pairing region is of the order of magnitude of chemical potential, then the value of the gap in the spectrum is not much different from the BCS estimation. However, if the pairing region is wider, then the gap value can be much larger and depends exponentially on its energy width.
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.
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