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Register a new userWeak Anti-localization in thin films of the Topological Semimetal Candidate Pd$_{3}$Bi$_{2}$S$_{2}$
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We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more than one type of charge carrier with a carrier concentration in the range $0.6$ - $2.26~times$ 10$^{21}$ cm$^{-3}$ and mobility in the range 0.96 - 1.73 $times$ 10$^{2}$ cm$^{2}$/Vs. At low temperatures a logarithmic increase in conductivity is observed which indicates the presence of weak anti-localization (WAL). The magnetotransport data is analysed within the Hikami-Larkin-Nagaoka (HLN) theory. It is found that temperature dependence of the dephasing length cant be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.
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Mn$_{3}$Sn is a non-collinear antiferromagnet which displays a large anomalous Hall effect at room temperature. It is believed that the principal contribution to its anomalous Hall conductivity comes from Berry curvature. Moreover, dc transport and photoemission experiments have confirmed that Mn$_{3}$Sn may be an example of a time-reversal symmetry breaking Weyl semimetal. Due to a small, but finite moment in the room temperature inverse triangular spin structure, which allows control of the Hall current with external field, this material has garnered much interest for next generation memory devices and THz spintronics applications. In this work, we report a THz range study of oriented Mn$_{3}$Sn thin films as a function of temperature. At low frequencies we found the optical conductivity can be well described by a single Drude oscillator. The plasma frequency is strongly suppressed in a temperature dependent fashion as one enters the 260 K helical phase. This may be associated with partial gapping of the Fermi surfaces that comes from breaking translational symmetry along the c-axis. The scattering rate shows quadratic temperature dependence below 200 K, highlighting the possible important role of interactions in this compound.
The ability to manipulate individual atoms and molecules using a scanning tunnelling microscope (STM) has been crucial for the development of a vast array of atomic scale devices and structures ranging from nanoscale motors and switches to quantum corrals. Molecular motors in particular have attracted considerable attention in view of their potential for assembly into complex nanoscale machines. Whereas the manipulated atoms or molecules are usually on top of a substrate, motors embedded in a lattice can be very beneficial for bottom-up construction, and may additionally be used to probe the in uence of the lattice on the electronic properties of the host material. Here, we present the discovery of controlled manipulation of a rotor in Fe doped Bi$_{2}$Se$_{3}$. We find that the current into the rotor, which can be finely tuned with the voltage, drives omni-directional switching between three equivalent orientations, each of which can be frozen in at small bias voltage. Using current fluctuation measurements at 1MHz and model simulations, we estimate that switching rates of hundreds of kHz for sub-nA currents are achieved.
Topological insulators are frequently also one of the best known thermoelectric materials. It has been recently discovered that in 3D topological insulators each skew dislocation can host a pair of 1D topological states a helical TLL. We derive exact analytical formulas for thermoelectric Seebeck coefficient in TLL and investigate up to what extent one can ascribe the outstanding thermoelectric properties of Bi 2 Te 3 to these 1D topological states. To this end we take a model of a dense dislocation network and find an analytic formula for an overlap between 1D (the TLL) and 3D electronic states. Our study is applicable to a weakly n-doped Bi 2 Te 3 but also to a broader class of nano-structured materials with artificially created 1D systems. Furthermore, our results can be used at finite frequency settings e.g. to capture transport activated by photo-excitations.
We report detailed magneto-transport measurements on single crystals of the magnetic Weyl semi-metal Co$_{3}$Sn$_{2}$S$_{2}$. Recently a large anomalous Hall effect and chiral anomaly have been observed in this material which have been suggested to be related to the large Berry curvature between the Weyl points (Liu et al., Nature Physics (2018).). Another effect expected to result from the topological band structure of magnetic Weyl materials is the planar Hall effect (PHE). In this work we report observation of this intrinsic effect in single crystals of Co$_{3}$Sn$_{2}$S$_{2}$. Crucially, the PHE is observed for temperature $T leq 74$~K which is much smaller than the ferromagnetic ordering temperature $T_c = 175$~K@. Together with the large anomalous Hall conductivity, this further demonstrates the Topological character of Co$_3$Sn$_2$S$_2$.
The magnetic, magneto-transport and ARPES studies of Fe and S co-doped Bi2Se3 were investigated. With doping concentration magneto-resistance (MR) gradually decreases and for a certain doping concentration giant negative MR is observed which persists up to room temperature. Magnetic measurement indicates that the negative MR is observed when ferromagnetic ordering is induced with Fe doping. The magnetic ordering can be attributed with the RKKY interaction. Positive MR reappears with larger doping concentration which may be attributed to the decrease of FM ordering due to the turning off of the spin-orbit coupling leading to the destruction of non-trivial bulk state. This in-effect de-hybridizes the conduction band with the Fe spin. The ARPES data also indicates that above a critical doping concentration (x>0.09) the non-trivial bulk state is completely destroyed.
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