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Register a new userPhotoemission study on pristine and Ni-doped SrTiO$_{3}$ thin films
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We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greenss function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings.
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Nb-doped SrTiO$_{3}$ epitaxial thin films have been prepared on (001) SrTiO$_{3}$ substrates using pulsed laser deposition. A high substrate temperature ($>1000^{circ}{C}$) was found to be necessary to achieve 2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces with 3.9 AA $ $ steps. The films show a metallic behavior, residual resistivity ratios between 10 and 100, and low residual resistivity of the order of 10$^{-4}$$Omega$cm. At 0.3 K, a sharp superconducting transition, reaching zero resistance, is observed.
Transparent pure and Cu-doped (2.5, 5 and 10 at. %) anatase TiO2 thin films were grown by pulsed laser deposition technique on LaAlO3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO2. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to this Cu substitutionally replacing cations in TiO2.
We report on the observation of metallic behavior in thin films of oxygen-deficient SrTiO$_3$ - down to 9 unit cells - when coherently strained on (001) SrTiO$_3$ or DyScO$_3$-buffered (001) SrTiO$_3$ substrates. These films have carrier concentrations of up to 2$times10^{22}$ cm$^{-3}$ and mobilities of up to 19,000 cm$^2$/V-s at 2 K. There exists a non-conducting layer in our SrTiO$_{3-delta}$ films that is larger in films with lower carrier concentrations. This non-conducting layer can be attributed to a surface depletion layer due to a Fermi level pinning potential. The depletion width, transport, and structural properties are not greatly affected by the insertion of a DyScO$_3$ buffer between the SrTiO$_3$ film and SrTiO$_3$ substrate.
By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.
We synthesized strontium titanate SrTiO$_3$ (STO), Zr doped $text{Sr}_text{1-x}text{Zr}_text{x}text{Ti}text{O}_3$ and (Zr, Ni) co-doped $text{Sr}_text{1-x}text{Zr}_text{x}text{Ti}_text{1-y}text{Ni}_text{y}text{O}_3$ samples using solid state reaction technique to report their structural, electrical and magnetic properties. The cubic $Pm$-$3m$ phase of the synthesized samples has been confirmed using Rietveld analysis of the powder X-ray diffraction pattern. The grain size of the synthesized materials was reduced significantly due to Zr doping as well as (Zr, Ni) co-doping in STO. The chemical species of the samples were identified using energy-dispersive X-ray spectroscopy. We observed forbidden first order Raman scattering at 148, 547 and 797 cm$^{-1}$ which may indicate nominal loss of inversion symmetry in cubic STO. The absence of absorption at 500 cm$^{-1}$ and within 600-700 cm$^{-1}$ band in Fourier Transform Infrared spectra corroborates Zr and Ni as substitutional dopants in our samples. Due to 4% Zr doping in $text{Sr}_text{0.96}text{Zr}_text{0.04}text{Ti}text{O}_3$ sample dielectric constant, remnant electric polarization, remnant magnetization and coercivity were increased. Notably, in the case of 4% Zr and 10% Ni co-doping we have observed clearly the existence of both FE and FM hysteresis loops in $text{Sr}_{0.96}text{Zr}_{0.04}text{Ti}_{0.90}text{Ni}_{0.10}text{O}_3$ sample. In this co-doped sample, the remnant magnetization and coercivity were increased by $sim$1 and $sim$2 orders of magnitude respectively as compared to those of undoped STO. The coexistence of FE and FM orders in (Zr, Ni) co-doped STO might have the potential for interesting multiferroic applications.
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