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Register a new userPhotoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films exhibiting photo-induced magnetization
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By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.
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The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam epitaxy. We find that the electrical conductivity and the saturation magnetization can be tuned over a wide range during growth. Our extensive characterization of the films provides a clear picture of the underlying physics of this spinel ferrimagnet with antiparallel Fe moments on the A and B sublattice: (i) Zn substitution removes both Fe3+ moments from the A sublattice and itinerant charge carriers from the B sublattice, (ii) growth in finite oxygen partial pressure generates Fe vacancies on the B sublattice also removing itinerant charge carriers, and (iii) application of both Zn substitution and excess oxygen results in a compensation effect as Zn substitution partially removes the Fe vacancies. A decrease (increase) of charge carrier density results in a weakening (strengthening) of double exchange and thereby a decrease (increase) of conductivity and the saturation magnetization. This scenario is confirmed by the observation that the saturation magnetization scales with the longitudinal conductivity. The combination of tailored films with semiconductor materials such as ZnO in multi-functional heterostructures seems to be particularly appealing.
We have measured high-field magnetization and magnetoresistance of polycrystalline samples of the A-site ordered perovskite CaCu3Ti4-xRuxO12 (x=0 - 4) utilizing a non-destructive pulsed magnet. We find that the magnetization for x=0.5, 1.0 and 1.5 is nonlinear, and tends to saturate in high fields. This is highly nontrivial because the magnetization for x=0 and 4 is linear in external field up to the highest one. We have analyzed this field dependence based on the thermodynamics of magnetic materials, and propose that the external fields delocalize the holes on the Cu2+ ions in order to maximize the entropy. This scenario is qualitatively consistent with a large magnetoresistance of -70% observed at 4.2 K at 52 T for x=1.5.
The valence and spin state evolution of Mn and Co on TbMn$_{rm 1-x}$Co$_{rm x}$O$_3$ series is precisely determined by means of soft and hard x-ray absorption spectroscopy (XAS) and K$beta$ x-ray emission spectroscopy (XES). Our results show the change from Mn$^{3+}$ to Mn$^{4+}$ both high-spin (HS) together with the evolution from Co$^{2+}$ HS to Co$^{3+}$ low-spin (LS) with increasing $rm x$. In addition, high energy resolution XAS spectra on the K pre-edge region are interpreted in terms of the strong charge transfer and hybridization effects along the series. These results correlate well with the spin values of Mn and Co atoms obtained from the K$beta$ XES data. From this study, we determine that Co enters into the transition metal sublattice of TbMnO$_3$ as a divalent ion in HS state, destabilizing the Mn long range magnetic order since very low doping compositions (${rm x} le 0.1$). Samples in the intermediate composition range ($0.4 le {rm x} le 0.6$) adopt the crystal structure of a double perovskite with long range ferromagnetic ordering which is due to Mn$^{4+}$-O-Co$^{2+}$ superexchange interactions with both cations in HS configuration. Ferromagnetism vanishes for ${rm x} ge 0.7$ due to the structural disorder that collapses the double perovskite structure. The spectroscopic techniques reveal the occurrence of Mn$^{4+}$ HS and a fluctuating valence state Co$^{2+}$ HS/Co$^{3+}$ LS in this composition range. Disorder and competitive interactions lead to a magnetic glassy behaviour in these samples.
Electronic structures of Zn$_{1-x}$Co$_x$O have been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Co 3d states are found to lie near the top of the O $2p$ valence band, with a peak around $sim 3$ eV binding energy. The Co $2p$ XAS spectrum provides evidence that the Co ions in Zn$_{1-x}$Co$_{x}$O are in the divalent Co$^{2+}$ ($d^7$) states under the tetrahedral symmetry. Our finding indicates that the properly substituted Co ions for Zn sites will not produce the diluted ferromagnetic semiconductor property.
We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greenss function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings.
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