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Register a new userDefect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals
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Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously reported 0.86 (E2) and 1.03 eV (E3) levels. For 10^18 cm-3 Zr-doped Ga2O3, signatures at 0.30 eV (E15) and 0.71 eV (E16) are present. For the highest Zr doping of 5*10^18 cm-3, we observe only one signature at 0.59 eV. Electric field-enhanced emission rates are demonstrated via increasing the reverse bias during measurement. The 0.86 eV signature in the UID sample displays phonon-assisted tunneling enhanced thermal emission and is consistent with the widely reported E2 (FeGa) defect. The 0.71 eV (E16) signature in the lower-Zr-doped crystal also exhibits phonon-assisted tunneling emission enhancement. Taking into account that the high doping in the Zr-doped diodes also increases the electric field, we propose that the 0.59 eV signature in the highest Zr-doped sample likely corresponds to the 0.71 eV signature in lower-doped samples. Our analysis highlights the importance of testing for and reporting on field-enhanced emission especially the electric field present during DLTS and other characterization experiments on beta-Ga2O3 along with the standard emission energy, cross-section, and lambda-corrected trap density. This is important because of the intended use of beta-Ga2O3 in high-field devices and the many orders of magnitude of possible doping.
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The effects of hydrogen incorporation into beta-Ga2O3 thin films have been investigated by chemical, electrical and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma doping without any structural alterations of the film; however, X-ray photoemission reveals major changes in the oxygen chemical environment. Depth-resolved cathodoluminescence (CL) reveals that the near-surface region of the H-doped Ga2O3 film exhibits a distinct red luminescence (RL) band at 1.9 eV. The emergence of the H-related RL band is accompanied by an enhancement in the electrical conductivity of the film by an order of magnitude. Temperature-resolved CL points to the formation of abundant H-related donors with a binding energy of 28 +/- 4 meV. The RL emission is attributed to shallow donor-deep acceptor pair recombination, where the acceptor is a VGa-H complex and the shallow donor is interstitial H. The binding energy of the VGa-H complex, based on our experimental considerations, is consistent with the computational results by Varley et al [J. Phys.: Condens. Matter, 23, 334212, 2011].
Cathodoluminescence spectra were measured to determine the characteristics of luminescence bands and carrier dynamics in beta-Ga2O3 bulk single crystals. The CL emission was found to be dominated by a broad UV emission peaked at 3.40 eV, which exhibits strong quenching with increasing temperature; however, its spectral shape and energy position remain virtually unchanged. We observed a super-linear increase of CL intensity with excitation density; this kinetics of carrier recombination can be explained in terms of carrier trapping and charge transfer at Fe impurity centres. The temperature-dependent properties of this UV band are consistent with weakly bound electrons in self-trapped excitons with an activation energy of 48 +/- 10 meV. In addition to the self-trapped exciton emission, a blue luminescence (BL) band is shown to be related to a donor-like defect, which increases significantly in concentration after hydrogen plasma annealing. The point defect responsible for the BL, likely an oxygen vacancy, is strongly coupled to the lattice exhibiting a Huang-Rhys factor of ~ 7.3.
We synthesized strontium titanate SrTiO$_3$ (STO), Zr doped $text{Sr}_text{1-x}text{Zr}_text{x}text{Ti}text{O}_3$ and (Zr, Ni) co-doped $text{Sr}_text{1-x}text{Zr}_text{x}text{Ti}_text{1-y}text{Ni}_text{y}text{O}_3$ samples using solid state reaction technique to report their structural, electrical and magnetic properties. The cubic $Pm$-$3m$ phase of the synthesized samples has been confirmed using Rietveld analysis of the powder X-ray diffraction pattern. The grain size of the synthesized materials was reduced significantly due to Zr doping as well as (Zr, Ni) co-doping in STO. The chemical species of the samples were identified using energy-dispersive X-ray spectroscopy. We observed forbidden first order Raman scattering at 148, 547 and 797 cm$^{-1}$ which may indicate nominal loss of inversion symmetry in cubic STO. The absence of absorption at 500 cm$^{-1}$ and within 600-700 cm$^{-1}$ band in Fourier Transform Infrared spectra corroborates Zr and Ni as substitutional dopants in our samples. Due to 4% Zr doping in $text{Sr}_text{0.96}text{Zr}_text{0.04}text{Ti}text{O}_3$ sample dielectric constant, remnant electric polarization, remnant magnetization and coercivity were increased. Notably, in the case of 4% Zr and 10% Ni co-doping we have observed clearly the existence of both FE and FM hysteresis loops in $text{Sr}_{0.96}text{Zr}_{0.04}text{Ti}_{0.90}text{Ni}_{0.10}text{O}_3$ sample. In this co-doped sample, the remnant magnetization and coercivity were increased by $sim$1 and $sim$2 orders of magnitude respectively as compared to those of undoped STO. The coexistence of FE and FM orders in (Zr, Ni) co-doped STO might have the potential for interesting multiferroic applications.
Sr$_{2}$FeMoO$_6$ is a double perovskite compound, known for its high temperature behavior. Combining different magnetic and spectroscopic tools, we show that this compound can be driven to rare example of antiferromagnetic metallic state through heavy electron doping. Considering synthesis of Sr$_{2-x}$La$_x$FeMoO$_6$ (1.0 $le{x}le$ 1.5) compounds, we find compelling evidences of antiferromagnetic metallic ground state for $xge$1.4. The local structural study on these compounds reveal unusual atomic scale phase distribution in terms of La, Fe and Sr, Mo-rich regions driven by strong La-O covalency: a phenomenon hitherto undisclosed in double perovskites. The general trend of our findings are in agreement with theoretical calculations carried out on realistic structures with the above mentioned local chemical fluctuations, which reconfirms the relevance of the kinetic energy driven magnetic model.
Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control offer widely tunable optical and electronic properties, doping has proven elusive. This arises both from the synthetic challenge of how to introduce single impurities and from a lack of fundamental understanding of this heavily doped limit under strong quantum confinement. We develop a method to dope semiconductor nanocrystals with metal impurities providing control of the band gap and Fermi energy. A combination of optical measurements, scanning tunneling spectroscopy and theory revealed the emergence of a confined impurity band and band-tailing. Successful control of doping and its understanding provide n- and p-doped semiconductor nanocrystals which greatly enhance the potential application of such materials in solar cells, thin-film transistors, and optoelectronic devices.
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