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Register a new userSignature of an antiferromagnetic metallic ground state in heavily electron doped Sr2FeMoO6
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Sr$_{2}$FeMoO$_6$ is a double perovskite compound, known for its high temperature behavior. Combining different magnetic and spectroscopic tools, we show that this compound can be driven to rare example of antiferromagnetic metallic state through heavy electron doping. Considering synthesis of Sr$_{2-x}$La$_x$FeMoO$_6$ (1.0 $le{x}le$ 1.5) compounds, we find compelling evidences of antiferromagnetic metallic ground state for $xge$1.4. The local structural study on these compounds reveal unusual atomic scale phase distribution in terms of La, Fe and Sr, Mo-rich regions driven by strong La-O covalency: a phenomenon hitherto undisclosed in double perovskites. The general trend of our findings are in agreement with theoretical calculations carried out on realistic structures with the above mentioned local chemical fluctuations, which reconfirms the relevance of the kinetic energy driven magnetic model.
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Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.
A magnon Nernst effect, an antiferromagnetic analogue of the magnon Hall effect in ferromagnetic insulators, has been studied experimentally for a layered antiferromagnetic insulator MnPS3 in contact with two Pt strips. Thermoelectric voltage in the Pt strips grown on MnPS3 single crystals exhibits non-monotonic temperature dependence at low temperatures, which cannot be explained by electronic origins in Pt but can be ascribed to the inverse spin Hall voltage induced by a magnon Nernst effect. Control of antiferromagnetic domains in the MnPS3 crystal by magnetoelectric cooling is found to modulate the low-temperature thermoelectric voltage in Pt, which corroborates the emergence of the magnon Nernst effect in Pt|MnPS3 hybrid structures.
We report magnetoresistance and Hall Effect results for electron-doped films of the high-temperature superconductor La$_{2-x}$Ce$_x$CuO$_4$ (LCCO) for temperatures from 0.7 to 45 K and magnetic fields up to 65 T. For x = 0.12 and 0.13, just below the Fermi surface reconstruction (FSR), the normal state in-plane resistivity exhibits a well-known upturn at low temperature. Our new results show that this resistivity upturn is eliminated at high magnetic field and the resistivity becomes linear-in-temperature from $sim$ 40 K down to 0.7 K. The magnitude of the linear coefficient scales with Tc and doping, as found previously [1,2] for dopings above the FSR. In addition, the normal state Hall coefficient has an unconventional field dependence for temperatures below 50K. This anomalous transport data presents a new challenge to theory and suggests that the strange metal normal state is also present in the antiferromagnetic regime.
Rare earth triangular lattice materials have been proposed as a good platform for the investigation of frustrated magnetic ground states. KErSe$_2$ with the delafossite structure, contains perfect two-dimensional Er$^{3+}$ triangular layers separated by potassium ions, realizing this ideal configuration and inviting study. Here we investigate the magnetism of KErSe$_2$ at miliKelvin temperatures by heat capacity and neutron powder diffraction. Heat capacity results reveal a magnetic transition at 0.2 K in zero applied field. This long-range order is suppressed by an applied magnetic field of 0.5 T below 0.08 K. Neutron powder diffraction suggests that the zero-field magnetic structure orders with $k=(frac{1}{2},0,frac{1}{2})$ in a stripe spin structure. Unexpectedly, Er is found to have a reduced moment of 3.06(1) $mu_B$/Er in the ordered state and diffuse magnetic scattering, which originates at higher temperatures, is found to persist in the ordered state potentially indicating magnetic fluctuations. Neutron diffraction collected under an applied field shows a metamagnetic transition at $sim$ 0.5 T to ferromagnetic order with $k$=(0,0,0) and two possible structures, which are likely dependent on the applied field direction. First principle calculations show that the zero field stripe spin structure can be explained by the first, second and third neighbor couplings in the antiferromagnetic triangular lattice.
Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control offer widely tunable optical and electronic properties, doping has proven elusive. This arises both from the synthetic challenge of how to introduce single impurities and from a lack of fundamental understanding of this heavily doped limit under strong quantum confinement. We develop a method to dope semiconductor nanocrystals with metal impurities providing control of the band gap and Fermi energy. A combination of optical measurements, scanning tunneling spectroscopy and theory revealed the emergence of a confined impurity band and band-tailing. Successful control of doping and its understanding provide n- and p-doped semiconductor nanocrystals which greatly enhance the potential application of such materials in solar cells, thin-film transistors, and optoelectronic devices.
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