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Register a new userPhotoelectric absorption cross section of silicon near the band gap from room temperature to sub-Kelvin temperature
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The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon band gap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data has been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the band gap.
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We present measurements of an amplifier operating at 3.8 GHz with 150 MHz of bandwidth based on the microstrip input-coil resonance of a dc superconducting quantum interference device (SQUID) with submicron Josephson junctions. The noise temperature is measured using two methods: comparing the signal-to-noise ratio of the system with and without the SQUID in the amplifier chain, and using a modified Y-factor technique where calibrated narrowband noise is mixed up to the SQUID amplifier operating frequency. With the SQUID cooled to 0.35 K we observe a minimum system noise temperature of 0.55 $pm~0.13$ K, dominated by the contribution from the SQUID amplifier.
The uncertainty of the ac Stark shift due to thermal radiation represents a major contribution to the systematic uncertainty budget of state-of-the-art optical atomic clocks. In the case of optical clocks based on trapped ions, the thermal behavior of the rf-driven ion trap must be precisely known. This determination is even more difficult when scalable linear ion traps are used. Such traps enable a more advanced control of multiple ions and have become a platform for new applications in quantum metrology, simulation and computation. Nevertheless, their complex structure makes it more difficult to precisely determine its temperature in operation and thus the related systematic uncertainty. We present here scalable linear ion traps for optical clocks, which exhibit very low temperature rise under operation. We use a finite-element model refined with experimental measurements to determine the thermal distribution in the ion trap and the temperature at the position of the ions. The trap temperature is investigated at different rf-drive frequencies and amplitudes with an infrared camera and integrated temperature sensors. We show that for typical trapping parameters for $mathrm{In}^{+}$, $mathrm{Al}^{+}$, $mathrm{Lu}^{+}$, $mathrm{Ca}^{+}$, $mathrm{Sr}^{+}$ or $mathrm{Yb}^{+}$ ions, the temperature rise at the position of the ions resulting from rf heating of the trap stays below 700 mK and can be controlled with an uncertainty on the order of a few 100 mK maximum.
Imaging applications in the terahertz (THz) frequency range are severely restricted by diffraction. Near-field scanning probe microscopy is commonly employed to enable mapping of the THz electromagnetic fields with sub-wavelength spatial resolution, allowing intriguing scientific phenomena to be explored such as charge carrier dynamics in nanostructures and THz plasmon-polaritons in novel 2D materials and devices. High-resolution THz imaging, so far, has been relying predominantly on THz detection techniques that require either an ultrafast laser or a cryogenically-cooled THz detector. Here, we demonstrate coherent near-field imaging in the THz frequency range using a room-temperature nanodetector embedded in the aperture of a near-field probe, and an interferometric optical setup driven by a THz quantum cascade laser (QCL). By performing phase-sensitive imaging of strongly confined THz fields created by plasmonic focusing we demonstrate the potential of our novel architecture for high-sensitivity coherent THz imaging with sub-wavelength spatial resolution.
Caloric responses (temperature changes) can be induced in solid-state materials by applying external stimuli such as stress, pressure, and electric and magnetic fields. The magnetic-field-stimulated response is called the magnetocaloric effect, and materials that exhibit this property have long been sought for applications in room temperature magnetic cooling due to their potentially superior efficiency and low impact on the environment. Other solid-state caloric phenomena are less developed, but are likewise under intense investigation. Here we introduce a new material that not only displays giant barocaloric (hydrostatic-pressure-induced) properties, but also a large magnetocaloric response near room temperature. It is unprecedented that two caloric effects of such extreme magnitude occur in the same material and at the same temperature. These effects originate from a magnetostructural transition and a magneto-volume (magnetostriction) effect where the volume change is large enough to force the system from a localized ordered state into an itinerant paramagnetic state.
We investigate the temperature effect on the electronic band structure and optical absorption property of wide-band-gap ternary nitride MgSiN$_2$ using first-principles calculations. We find that electron-phonon coupling leads to a giant reduction in the indirect gap of MgSiN$_2$, which is indispensable in understanding the optoelectronic properties of this material. Moreover, higher-order electron-phonon coupling terms in MgSiN$_2$ captured by the Monte Carlo calculations play an important role, especially at higher temperatures. Taking the band gap renormalization into account, the band gap of MgSiN$_2$ determined by the quasiparticle GW0 calculation shows good agreement with recent experimental result. The predicted phonon-assisted indirect optical absorption spectra show that with increasing temperature the absorption onset undergoes a red-shift and the absorption peaks become smoother. Our work provides helpful insights to the nature of the band gap of MgSiN$_2$ and facilitates its application in ultraviolet optoelectronic devices.
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