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Register a new userThermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
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Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single photon emission with a purity of $g_{50mathrm{K}}^{(2)}left(0right)=0.13$ up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated temperatures in the telecom O-band and highlight means for improvements in their performance.
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We study optically driven Rabi rotations of a quantum dot exciton transition between 5 and 50 K, and for pulse-areas of up to $14pi$. In a high driving field regime, the decay of the Rabi rotations is nonmonotonic, and the period decreases with pulse-area and increases with temperature. By comparing the experiments to a weak-coupling model of the exciton-phonon interaction, we demonstrate that the observed renormalization of the Rabi frequency is induced by fluctuations in the bath of longitudinal acoustic phonons, an effect that is a phonon analogy of the Lamb-shift.
In the field of condensed matter, graphene plays a central role as an emerging material for nanoelectronics. Nevertheless, graphene is a semimetal, which constitutes a severe limitation for some future applications. Therefore, a lot of efforts are being made to develop semiconductor materials whose structure is compatible with the graphene lattice. In this perspective, little pieces of graphene represent a promising alternative. In particular, their electronic, optical and spin properties can be in principle controlled by designing their size, shape and edges. As an example, graphene nanoribbons with zigzag edges have localized spin polarized states. Likewise, singlet-triplet energy splitting can be chosen by designing the structure of graphene quantum dots. Moreover, bottom-up molecular synthesis put these potentialities at our fingertips. Here, we report on a single emitter study that directly addresses the intrinsic properties of a single graphene quantum dot. In particular, we show that graphene quantum dots emit single photons at room temperature with a high purity, a high brightness and a good photostability. These results pave the way to the development of new quantum systems based on these nanoscale pieces of graphene.
The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer (MMB) can shift the emission to the technologically attractive telecom C-band range centered at 1550nm. However, the thickness of common MMB designs limits their compatibility with most photonic resonator types. Here we report on the MOVPE growth of a novel InGaAs MMB with a non-linear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. Single-photon emission at 1550nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom non-classical light sources as a key component of photonic quantum technologies.
Most quantum communication schemes aim at the long-distance transmission of quantum information. In the quantum repeater concept, the transmission line is subdivided into shorter links interconnected by entanglement distribution via Bell-state measurements to overcome inherent channel losses. This concept requires on-demand single-photon sources with a high degree of multi-photon suppression and high indistinguishability within each repeater node. For a successful operation of the repeater, a spectral matching of remote quantum light sources is essential. We present a spectrally tunable single-photon source emitting in the telecom O-band with the potential to function as a building block of a quantum communication network based on optical fibers. A thin membrane of GaAs embedding InGaAs quantum dots (QDs) is attached onto a piezoelectric actuator via gold thermocompression bonding. Here the thin gold layer acts simultaneously as an electrical contact, strain transmission medium and broadband backside mirror for the QD-micromesa. The nanofabrication of the QD-micromesa is based on in-situ electron-beam lithography, which makes it possible to integrate pre-selected single QDs deterministically into the center of monolithic micromesa structures. The QD pre-selection is based on distinct single-QD properties, signal intensity and emission energy. In combination with strain-induced fine tuning this offers a robust method to achieve spectral resonance in the emission of remote QDs. We show that the spectral tuning has no detectable influence on the multi-photon suppression with $g^{(2)}(0)$ as low as 2-4% and that the emission can be stabilized to an accuracy of 4 $mu$eV using a closed-loop optical feedback.
A practical way to link separate nodes in quantum networks is to send photons over the standard telecom fibre network. This requires sub-Poissonian photon sources in the telecom wavelength band around 1550 nm, where the photon coherence time has to be sufficient to enable the many interference-based technologies at the heart of quantum networks. Here, we show that droplet epitaxy InAs/InP quantum dots emitting in the telecom C-band can provide photons with coherence times exceeding 1 ns even under non-resonant excitation, more than a factor two longer than values reported for shorter wavelength quantum dots under similar conditions. We demonstrate that these coherence times enable near-optimal interference with a C-band laser qubit, with visibilities only limited by the quantum dot multiphoton emission. Using entangled photons, we further show teleportation of such qubits in six different bases with average fidelity reaching 88.3$pm$4%. Beyond direct applications in long-distance quantum communication, the high degree of coherence in these quantum dots is promising for future spin based telecom quantum network applications.
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