Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userPhonon induced Rabi frequency renormalization of optically driven single InGaAs/GaAs quantum dots
142
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We study optically driven Rabi rotations of a quantum dot exciton transition between 5 and 50 K, and for pulse-areas of up to $14pi$. In a high driving field regime, the decay of the Rabi rotations is nonmonotonic, and the period decreases with pulse-area and increases with temperature. By comparing the experiments to a weak-coupling model of the exciton-phonon interaction, we demonstrate that the observed renormalization of the Rabi frequency is induced by fluctuations in the bath of longitudinal acoustic phonons, an effect that is a phonon analogy of the Lamb-shift.
rate research
Read More
Recently, longitudinal acoustic phonons have been identified as the main source of the intensity damping observed in Rabi rotation measurements of the ground-state exciton of a single InAs/GaAs quantum dot. Here we report experiments of intensity damped Rabi rotations in the case of detuned laser pulses, the results have implications for the coherent optical control of both excitons and spins using detuned laser pulses.
We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.
We investigated optical spin orientation and dynamic nuclear polarization (DNP) in individual self-assembled InGaAs/GaAs quantum dots (QDs) doped by a single Mn atom, a magnetic impurity providing a neutral acceptor A$^0$ with an effective spin $J=1$. We find that the spin of an electron photo-created in such a quantum dot can be efficiently oriented by a quasi-resonant circularly-polarized excitation. For the electron spin levels which are made quasi-degenerate by a magnetic field compensating the exchange interaction $Delta_e$ with A$^0$, there is however a full depolarization due the anisotropic part of the exchange. Still, in most studied QDs, the spin polarized photo-electrons give rise to a pronounced DNP which grows with a longitudinal magnetic field until a critical field where it abruptly vanishes. For some QDs, several replica of such DNP sequence are observed at different magnetic fields. This striking behavior is qualitatively discussed as a consequence of different exchange interactions experienced by the electron, driving the DNP rate via the energy cost of electron-nucleus spin flip-flops.
We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization- and magnetic field-dependent $mu$-photoluminescence measurements, which allow us to identify different excited states of the quantum dot system. Besides that, we present a comprehensive analysis of g-factors and diamagnetic coefficients of charged and neutral excitonic states in Voigt and Faraday configuration. Supported by theoretical calculations by the Configuration interaction method, we show that the widely used single-particle Zeeman Hamiltonian cannot be used to extract reliable values of the g-factors of the constituent particles from excitonic transition measurements.
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single photon emission with a purity of $g_{50mathrm{K}}^{(2)}left(0right)=0.13$ up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated temperatures in the telecom O-band and highlight means for improvements in their performance.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
