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Register a new userTunable critical field in Rashba superconductor thin-films
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The upper critical field in type II superconductors is limited by the Pauli paramagnetic limit. In superconductors with strong Rashba spin-orbit coupling this limit can be overcome by forming a helical state. Here we quantitatively study the magnetic field-temperature phase diagram of finite-size superconductors with Rashba spin-orbit coupling. We discuss the effect of finite size and shape anisotropy. We demonstrate that the critical field is controllable by intrinsic parameters such as spin-orbit coupling strength and tunable parameters such as sample geometry and applied field direction. Our study opens new avenues for the design of superconducting spin-valves.
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Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms.
Various Fe-vacancy orders have been reported in tetragonal Fe1-xSe single crystals and nanowires/nanosheets, which are similar to those found in alkali metal intercalated A1-xFe2-ySe2 superconductors. Here we report the in-situ angle-resolved photoemission spectroscopy study of Fe-vacancy disordered and ordered phases in FeSe multi-layer thin films grown by molecular beam epitaxy. Low temperature annealed FeSe films are identified to be Fe-vacancy disordered phase and electron doped. Further long-time low temperature anneal can change the Fe-vacancy disordered phase to ordered phase, which is found to be semiconductor/insulator with (root 5) x (root 5) superstructure and can be reversely changed to disordered phase with high temperature anneal. Our results reveal that the disorder-order transition in FeSe thin films can be simply tuned by vacuum anneal and the (root 5) x (root 5) Fe-vacancy ordered phase is more likely the parent phase of FeSe.
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