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Register a new userNative Defects in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$
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Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $mathrm{MnBi_2Te_4}$. Two native defects $mathrm{Mn_{Bi}}$ and $mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $sim80$~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from $mathrm{Bi_{Mn}}$ antisites at Mn sites. The random distribution of $mathrm{Mn_{Bi}}$ and $mathrm{Bi_{Mn}}$ antisites results in spatial fluctuation of local density of states near the Fermi level in $mathrm{MnBi_2Te_4}$.
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Despite the rapid progress in understanding the first intrinsic magnetic topological insulator MnBi$_2$Te$_4$, its electronic structure remains a topic under debates. Here we perform a thorough spectroscopic investigation into the electronic structure of MnBi$_2$Te$_4$ via laser-based angle-resolved photoemission spectroscopy. Through quantitative analysis, we estimate an upper bound of 3 meV for the gap size of the topological surface state. Furthermore, our circular dichroism measurements reveal band chiralities for both the topological surface state and quasi-2D bands, which can be well reproduced in a band hybridization model. A numerical simulation of energy-momentum dispersions based on a four-band model with an additional step potential near the surface provides a promising explanation for the origin of the quasi-2D bands. Our study represents a solid step forward in reconciling the existing controversies in the electronic structure of MnBi$_2$Te$_4$, and provides an important framework to understand the electronic structures of other relevant topological materials MnBi$_{2n}$Te$_{3n+1}$.
The recent discovery of antiferromagnetic (AFM) topological insulator (TI) MnBi$_2$Te$_4$ has triggered great research efforts on exploring novel magnetic topological physics. Based on first-principles calculations, we find that the manipulation of magnetic orientation and order not only significantly affects material symmetries and orbital hybridizations, but also results in variant new magnetic topological phases in MnBi$_2$Te$_4$. We thus predict a series of unusual topological quantum phase transitions that are magnetically controllable in the material, including phase transitions from AFM TI to AFM mirror topological crystalline insulator, from type-II to type-I topological Weyl semimetal, and from axion insulator to Chern insulator. The findings open new opportunities for future research and applications of magnetic topological materials.
More than forty years ago, axion was postulated as an elementary particle with a low mass and weak interaction in particle physics to solve the strong $mathcal{CP}$ (charge conjugation and parity) puzzle. Axions are also considered as a possible component of dark matter of the universe. However, the existence of axions in nature has not been confirmed. Interestingly, axions arise as pseudoscalar fields derived from the Chern-Simons theory in condensed matter physics. In antiferromagnetic insulators, the axion field can become dynamical induced by spin-wave excitations and exhibits rich exotic phenomena, such as, the chiral magnetic effect, axionic polariton and so on. However, the study of the dynamical axion field is rare due to the lack of real materials. Recently, MnBi$_2$Te$_4$ was discovered to be an antiferromagnetic topological insulator with a quantized axion field protected by the inversion symmetry $mathcal{P}$ and the magnetic-crystalline symmetry $mathcal{S}$. Here, we studied MnBi$_2$Te$_4$ films in which both the $mathcal{P}$ and $mathcal{S}$ symmetries are spontaneously broken and found that the dynamical axion field and largely tunable dynamical magnetoelectric effects can be realized through tuning the thickness of MnBi$_2$Te$_4$ films, the temperature and the element substitution. Our results open a broad avenue to study axion dynamics in antiferromagnetic topological insulator MnBi$_2$Te$_4$ and related materials, and also is hopeful to promote the research of dark matter.
The layered topological insulator MnBi$_2$Te$_4$ has attracted great interest recently due to its intrinsic antiferromagnetic order, potentially hosting various topological phases. By temperature-dependent infrared spectroscopy over a broad frequency range, we studied the changes in the optical conductivity of MnBi$_2$Te$_4$ at the magnetic ordering temperature. The temperature dependence of several optical parameters reveals an anomaly at the magnetic phase transition, which suggests the correlation between the bulk electronic band structure and the magnetism. We relate our findings to recent reports on the temperature dependence of the electronic band structure of MnBi$_2$Te$_4$.
The Dirac point gap at the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$ is a highly debated issue. While the early photoemission measurements reported on large gaps in agreement with theoretical predictions, other experiments found vanishingly small splitting of the MnBi$_2$Te$_4$ Dirac cone. Here, we study the crystalline and electronic structure of MnBi$_2$Te$_4$(0001) using scanning tunneling microscopy/spectroscopy (STM/S), micro($mu$)-laser angle resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. Our topographic STM images clearly reveal features corresponding to point defects in the surface Te and subsurface Bi layers that we identify with the aid of STM simulations as Bi$_text{Te}$ antisites (Bi atoms at the Te sites) and Mn$_text{Bi}$ substitutions (Mn atoms at the Bi sites), respectively. X-ray diffraction (XRD) experiments further evidence the presence of cation (Mn-Bi) intermixing. Altogether, this affects the distribution of the Mn atoms, which, inevitably, leads to a deviation of the MnBi$_2$Te$_4$ magnetic structure from that predicted for the ideal crystal structure. Our transport measurements suggest that the degree of this deviation varies from sample to sample. Consistently, the ARPES/STS experiments reveal that the Dirac point gap of the topological surface state is different for different samples/sample cleavages. Our DFT surface electronic structure calculations show that, due to the predominant localization of the topological surface state near the Bi layers, Mn$_text{Bi}$ defects can cause a strong reduction of the MnBi$_2$Te$_4$ Dirac point gap, given the recently proved antiparallel alignment of the Mn$_text{Bi}$ moments with respect to those of the Mn layer. Our results provide a key to puzzle out the MnBi$_2$Te$_4$ Dirac point gap mystery.
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