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Register a new userOrigins of electronic bands in antiferromagnetic topological insulator MnBi$_2$Te$_4$
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Despite the rapid progress in understanding the first intrinsic magnetic topological insulator MnBi$_2$Te$_4$, its electronic structure remains a topic under debates. Here we perform a thorough spectroscopic investigation into the electronic structure of MnBi$_2$Te$_4$ via laser-based angle-resolved photoemission spectroscopy. Through quantitative analysis, we estimate an upper bound of 3 meV for the gap size of the topological surface state. Furthermore, our circular dichroism measurements reveal band chiralities for both the topological surface state and quasi-2D bands, which can be well reproduced in a band hybridization model. A numerical simulation of energy-momentum dispersions based on a four-band model with an additional step potential near the surface provides a promising explanation for the origin of the quasi-2D bands. Our study represents a solid step forward in reconciling the existing controversies in the electronic structure of MnBi$_2$Te$_4$, and provides an important framework to understand the electronic structures of other relevant topological materials MnBi$_{2n}$Te$_{3n+1}$.
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Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $mathrm{MnBi_2Te_4}$. Two native defects $mathrm{Mn_{Bi}}$ and $mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $sim80$~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from $mathrm{Bi_{Mn}}$ antisites at Mn sites. The random distribution of $mathrm{Mn_{Bi}}$ and $mathrm{Bi_{Mn}}$ antisites results in spatial fluctuation of local density of states near the Fermi level in $mathrm{MnBi_2Te_4}$.
The recent discovery of antiferromagnetic (AFM) topological insulator (TI) MnBi$_2$Te$_4$ has triggered great research efforts on exploring novel magnetic topological physics. Based on first-principles calculations, we find that the manipulation of magnetic orientation and order not only significantly affects material symmetries and orbital hybridizations, but also results in variant new magnetic topological phases in MnBi$_2$Te$_4$. We thus predict a series of unusual topological quantum phase transitions that are magnetically controllable in the material, including phase transitions from AFM TI to AFM mirror topological crystalline insulator, from type-II to type-I topological Weyl semimetal, and from axion insulator to Chern insulator. The findings open new opportunities for future research and applications of magnetic topological materials.
The layered topological insulator MnBi$_2$Te$_4$ has attracted great interest recently due to its intrinsic antiferromagnetic order, potentially hosting various topological phases. By temperature-dependent infrared spectroscopy over a broad frequency range, we studied the changes in the optical conductivity of MnBi$_2$Te$_4$ at the magnetic ordering temperature. The temperature dependence of several optical parameters reveals an anomaly at the magnetic phase transition, which suggests the correlation between the bulk electronic band structure and the magnetism. We relate our findings to recent reports on the temperature dependence of the electronic band structure of MnBi$_2$Te$_4$.
More than forty years ago, axion was postulated as an elementary particle with a low mass and weak interaction in particle physics to solve the strong $mathcal{CP}$ (charge conjugation and parity) puzzle. Axions are also considered as a possible component of dark matter of the universe. However, the existence of axions in nature has not been confirmed. Interestingly, axions arise as pseudoscalar fields derived from the Chern-Simons theory in condensed matter physics. In antiferromagnetic insulators, the axion field can become dynamical induced by spin-wave excitations and exhibits rich exotic phenomena, such as, the chiral magnetic effect, axionic polariton and so on. However, the study of the dynamical axion field is rare due to the lack of real materials. Recently, MnBi$_2$Te$_4$ was discovered to be an antiferromagnetic topological insulator with a quantized axion field protected by the inversion symmetry $mathcal{P}$ and the magnetic-crystalline symmetry $mathcal{S}$. Here, we studied MnBi$_2$Te$_4$ films in which both the $mathcal{P}$ and $mathcal{S}$ symmetries are spontaneously broken and found that the dynamical axion field and largely tunable dynamical magnetoelectric effects can be realized through tuning the thickness of MnBi$_2$Te$_4$ films, the temperature and the element substitution. Our results open a broad avenue to study axion dynamics in antiferromagnetic topological insulator MnBi$_2$Te$_4$ and related materials, and also is hopeful to promote the research of dark matter.
Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Neel temperature ($T_mathrm{N}=24.5$~K). We propose that the gap above $T_mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments.
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