Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userEvolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss
72
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Amorphous hydrogenated silicon nitride ($textit{a}$-SiN$_mathrm{textit{x}}$:H) thin films irradiated with 100 MeV Ni$^{7+}$ results in the formation of continuous ion track structures at the lower fluence of $5times{10^{12}}$ ions/cm$^2$ whereas at higher fluence of $1times{10^{14}}$ ions/cm$^2$ the track structures fragment into discontinuous ion track like structures . The observation of the discontinuous ion track like structures at the high fluence of $1times{10^{14}}$ ions/cm$^2$ shows clearly that higher fluence irradiation may not always lead to dissolution of the microstructure formed at lower fluence. The results are understood on the basis of a dynamic electronic energy loss (S$_{e}$) in the course of irradiation resulting from the out-diffusion of hydrogen from the films and a continuous increase in density of $textit{a}$-SiN$_mathrm{textit{x}}$:H films.
rate research
Read More
Amorphous oxide thin films play a fundamental role in state-of-the art interferometry experiments, such as gravitational wave detectors where these films compose the high reflectance mirrors of end and input masses. The sensitivity of these detectors is affected by thermal noise in the mirrors with its main source being the mechanical loss of the high index layers. These thermally driven fluctuations are a fundamental limit to optical interferometry experiments and there is a pressing need to understand the underlying processes that lead to mechanical dissipation in materials at room temperature. Two strategies are known to lower the mechanical loss: employing a mixture of Ta$_2$O$_5$ with $approx$ 20% of TiO$_2$ and post-deposition annealing, but the reasons behind this are not completely understood. In this work, we present a systematic study of the structural and optical properties of ion beam sputtered TiO$_2$-doped Ta$_2$O$_5$ films as a function of the annealing temperature. We show for the first time that low mechanical loss is associated with a material morphology that consists of nanometer sized Ar-rich bubbles embedded into an atomically homogeneous mixed titanium-tantalum oxide. When the Ti cation ratio is high, however, phase separation occurs in the film which leads to increased mechanical loss. These results indicate that for designing low mechanical loss mixed oxide coatings for interferometry applications it would be beneficial to identify materials with the ability to form ternary compounds while the dopant ratio needs to be kept low to avoid phase separation.
In the quest for dynamic multimodal probing of a materials structure and functionality, it is critical to be able to quantify the chemical state on the atomic and nanoscale using element specific electronic and structurally sensitive tools such as electron energy loss spectroscopy (EELS). Ultrafast EELF, with combined energy, time, and spatial resolution in a transmission electron microscope, has recently enabled transformative studies of photo excited nanostructure evolution and mapping of evanescent electromagnetic fields. This article aims to describe the state of the art experimental techniques in this emerging field and its major uses and future applications.
We have measured the stopping powers and straggling of fast, highly ionized atoms passing through thin bilayer targets made up of metals and insulators. We were surprised to find that the energy losses as well as the straggling depend on the ordering of the target and have small but significantly different values on bilayer reversal. We ascribe this newly found difference in energy loss to the surface energy loss field effect due to the differing surface wake fields as the beam exits the target in the two cases. This finding is validated with experiments using several different projectiles, velocities, and bilayer targets. Both partners of the diatomic molecular ions also display similar results. A comparison of the energy loss results with those of previous theoretical predictions for the surface wake potential for fast ions in solids supports the existence of a self-wake.
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dynamic annealing. While at room temperature, the nanopillars evolve to a conical shape due to ion-induced plastic deformation and viscous flow of amorphized Si, simultaneous dynamic annealing during the irradiation at elevated temperatures prevents amorphization which is necessary for the viscous flow. Above the critical temperature of ion-induced amorphization, a steady decrease of the diameter was observed as a result of the dominating forward sputtering process through the nanopillar sidewalls. Under these conditions the nanopillars can be thinned down to a diameter of 10 nm in a well-controlled manner. A deeper understanding of the pillar thinning process has been achieved by a comparison of experimental results with 3D computer simulations based on the binary collision approximation.
The Helium Ion Microscope (HIM) has the capability to image small features with a resolution down to 0.35 nm due to its highly focused gas field ionization source and its small beam-sample interaction volume. In this work, the focused helium ion beam of a HIM is utilized to create nanopores with diameters down to 1.3 nm. It will be demonstrated that nanopores can be milled into silicon nitride, carbon nanomembranes (CNMs) and graphene with well-defined aspect ratio. To image and characterize the produced nanopores, helium ion microscopy and high resolution scanning transmission electron microscopy were used. The analysis of the nanopores growth behavior, allows inferring on the profile of the helium ion beam.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
