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Register a new userNanopore fabrication and characterization by helium ion microscopy
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Added by
Armin G\\\"olzh\\\"auser
Publication date
2018
fields
Physics
and research's language is
English
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The Helium Ion Microscope (HIM) has the capability to image small features with a resolution down to 0.35 nm due to its highly focused gas field ionization source and its small beam-sample interaction volume. In this work, the focused helium ion beam of a HIM is utilized to create nanopores with diameters down to 1.3 nm. It will be demonstrated that nanopores can be milled into silicon nitride, carbon nanomembranes (CNMs) and graphene with well-defined aspect ratio. To image and characterize the produced nanopores, helium ion microscopy and high resolution scanning transmission electron microscopy were used. The analysis of the nanopores growth behavior, allows inferring on the profile of the helium ion beam.
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High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect material properties under varying measurement conditions. Similarly, multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance. In this work, we apply these high throughput experimental methods to thin film transistors (TFTs), demonstrating combinatorial device fabrication and semi-automated characterization using sputtered Indium-Gallium-Zinc-Oxide (IGZO) TFTs as a case study. We show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library, such as channel thickness and length, channel cation compositions, and oxygen atmosphere during deposition. We also present a semi-automated method to measure the 44 devices fabricated on a 50x50mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time. Finally, we propose a fully automated characterization system for similar TFT libraries, which can be coupled with high throughput data analysis. These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.
The shape of metallic constrictions of nanoscopic dimensions (necks) formed using a scanning tunneling microscope (STM) is shown to depend on the fabrication procedure. Submitting the neck to repeated plastic deformation cycles makes possible to obtain long necks or nanowires. Point-contact spectroscopy results show that these long necks are quite crystalline, indicating that the repeated cycles of plastic deformation act as a mechanical annealing of the neck.
Plasmonic nanopores are extensively investigated as single molecules detectors. The main limitations in plasmonic nanopore technology are the too fast translocation velocity of the molecule through the pore and the consequent very short analysis times, as well as the possible instabilities due to local heating. The most interesting approach to control the translocation of molecules and enable longer acquisition times is represented by the ability to efficiently trap and tune the motion of nanoparticles that can be used to tag molecules. Here, we theoretically investigate the performance of a magneto-plasmonic nanopore prepared with a thin layer of cobalt sandwiched between two gold layers. A nanopore is then coupled with a translocating magnetic nanoparticle. By setting the magnetic configuration of the cobalt layer around the pore by an external magnetic field, it is possible to generate a nanoscale magnetic tweezer to trap the nanoparticle at a specific point. Considering a 10 nm magnetite nanoparticle we calculate a trapping force up to 28 pN, an order of magnitude above the force that can be obtained with standard optical or plasmonic trapping approaches. Moreover, the magnetic force pulls the nanoparticle in close contact with the plasmonic nanopores wall, thus enabling the formation of a nanocavity enclosing a deeply sub-wavelength confined electromagnetic field with an average field intensity enhancement up to 230 at near-infrared wavelengths. The presented hybrid magneto-plasmonic system points towards a strategy to improve nanopore-based biosensors for single-molecule detection and potentially for analysis of various biomolecules.
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 ${mu}$Jcm$^{-2}$ at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.
Hafnium oxide (HfO2)-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon CMOS technology, high switchable polarization, good endurance and thickness scalability. These factors have led to steep rise in research on this class of materials over the past number of years. At the same time, only a few reports on the direct sensing of nanoscale ferroelectric properties exist, with many questions remaining regarding the emergence of ferroelectricity in these materials. While piezoresponse force microscopy (PFM) is ideally suited to probe piezo- and ferro-electricity on the nanoscale, it is known to suffer artifacts which complicate quantitative interpretation of results and can even lead to claims of ferroelectricity in materials which are not ferroelectric. In this paper we explore the possibility of using an improved PFM method based on interferometric displacement sensing (IDS) to study nanoscale ferroelectricity in bare Si doped HfO2. Our results indicate a clear difference in the local remnant state of various HfO2 crystallites with reported values for the piezoelectric coupling in range 0.6-1.5 pm/V. In addition, we report unusual ferroelectric polarization switching including possible contributions from electrostriction and Vegard effect, which may indicate oxygen vacancies or interfacial effects influence the emergence of nanoscale ferroelectricity in HfO2.
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