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Register a new userPiezoelectric SPDT NEMS Switch for Complementary Logic
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Off-state current leakage and switching delay has become the main challenge for continued complementary metal-oxide-semiconductor (CMOS) technology scaling. Previous work proposes a see-saw relay structure to mimic the operation of CMOS. This paper presents a novel single-pole double-throw (SPDT) switch structure based on AlN piezoelectric cantilever beam to improve the former see-saw relay structure. Geometry parameters are given and key switch parameters such as actuation voltage, switching time and contact force have been calculated and compared with previous see-saw relay structure. Analysis and design process is shown and micro-fabrication process is described as well.
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An innovative transformation electromagnetics (TE) paradigm, which leverages on the Schwarz-Christoffel (SC) theorem, is proposed to design effective and realistic field manipulation devices (FMDs). Thanks to the conformal property, such a TE design method allows one to considerably mitigate the anisotropy of the synthesized metalenses (i.e., devices with artificially engineered materials covering an antenna to modify its radiation features) with respect to those yielded by the competitive state-of-the-art TE techniques. Moreover, devices with doubly connected contours, thus including masts with arbitrary sections and lenses with holes/forbidden regions in which the material properties cannot be controlled, can be handled. A set of numerical experiments is presented to assess the features of the proposed method in terms of field-manipulation capabilities and complexity of the lens material in a comparative fashion.
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The implementation of on-chip MEMS/NEMS transducers for arbitrary resonators is difficult due to a number of difficulties such as material choice, large dissipation, restriction in high frequency, low sensitivity, poor reliability, and poor integrability. We show a universal on-chip transduction scheme, which can be adapted to any MEMS/NEMS resonator. We achieve all electrical, on-chip MEMS/NEMS for any resonator.
We report on the first beta gallium oxide (beta-Ga2O3) crystal feedback oscillator built by employing a vibrating beta-Ga2O3 nanoresonator as the frequency reference for real-time middle ultraviolet (MUV) light detection. We fabricate suspended beta-Ga2O3 nanodevices through synthesis of beta-Ga2O3 nanoflakes using low-pressure chemical vapor deposition (LPCVD), and dry transfer of nanoflakes on microtrenches. Open-loop tests reveal a resonance of the beta-Ga2O3 device at ~30 MHz. A closed-loop oscillator is then realized by using a combined optical-electrical feedback circuitry, to perform real-time resonant sensing of MUV irradiation. The oscillator exposed to cyclic MUV irradiation exhibits resonant frequency downshifts, with a measured responsivity of $mathscr{R}$ = -3.1 Hz/pW and a minimum detectable power of delta Pmin = 0.53 nW for MUV detection.
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