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Register a new userOn-chip self-sensing enhancing actuation for MEMS/NEMS with large efficiency
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The implementation of on-chip MEMS/NEMS transducers for arbitrary resonators is difficult due to a number of difficulties such as material choice, large dissipation, restriction in high frequency, low sensitivity, poor reliability, and poor integrability. We show a universal on-chip transduction scheme, which can be adapted to any MEMS/NEMS resonator. We achieve all electrical, on-chip MEMS/NEMS for any resonator.
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Unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties of graphene make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields. We have demonstrated the manufacture of square graphene membranes with side lengths from 7 micro meter to 110 micro meter and suspended proof masses consisting of solid silicon cubes that are from 5 micro meter multiply 5 micro meter multiply 16.4 micro meter to 100 micro meter multiply 100 micro meter multiply 16.4 micro meter in size. Our approach is compatible with wafer-scale MEMS and semiconductor manufacturing technologies, and the manufacturing yields of the graphene membranes with suspended proof masses were greater than 90%, with more than 70% of the graphene membranes having more than 90% graphene area without visible defects. The graphene membranes with suspended proof masses were extremely robust and were able to withstand indentation forces from an atomic force microscope (AFM) tip of up to ~7000 nN. The measured resonance frequencies of the realized structures ranged from tens to hundreds of kHz, with quality factors ranging from 63 to 148. The proposed approach for the reliable and large-scale manufacture of graphene membranes with suspended proof masses will enable the development and study of innovative NEMS devices with new functionalities and improved performances.
Wavelength-scale SBS waveguides are enabling novel on-chip functionalities. The micro- and nano-scale SBS structures and the complexity of the SBS waveguides require a characterization technique to monitor the local geometry-dependent SBS responses along the waveguide. In this work, we experimentally demonstrate detection of longitudinal features down to 200$mu$m on a silicon-chalcogenide waveguide using the Brillouin optical correlation domain analysis (BOCDA) technique. We provide simulation and analysis on how multiple acoustic and optical modes and geometrical variations influence the Brillouin spectrum.
Off-state current leakage and switching delay has become the main challenge for continued complementary metal-oxide-semiconductor (CMOS) technology scaling. Previous work proposes a see-saw relay structure to mimic the operation of CMOS. This paper presents a novel single-pole double-throw (SPDT) switch structure based on AlN piezoelectric cantilever beam to improve the former see-saw relay structure. Geometry parameters are given and key switch parameters such as actuation voltage, switching time and contact force have been calculated and compared with previous see-saw relay structure. Analysis and design process is shown and micro-fabrication process is described as well.
Integrated nonlinear photonic circuits received rapid development in recent years, providing all-optical functionalities enabled by cavity-enhanced photon-photon interaction for classical and quantum applications. A high-efficiency fiber-to-chip interface is key to the use of these integrated photonic circuits for quantum information tasks, as photon loss is a major source that weakens quantum protocols. Here, overcoming material and fabrication limitation of thin-film aluminum nitride by adopting a stepwise waveguiding scheme, we demonstrate low-loss adiabatic fiber-optic couplers in aluminum nitride films with a substantial thickness (600 nm) for optimized nonlinear photon interaction. For telecom (1550 nm) and near-visible (780 nm) transverse magnetic-polarized light, the measured insertion loss of the fiber-optic coupler is -0.97 dB and -2.6 dB, respectively. Our results will facilitate the use of aluminum nitride integrated photonic circuits as efficient quantum resources for generation of entangled photons and squeezed light on microchips.
The self-powered sensing system could harness ambient energy to power the sensor without the need for external electrical energy. Recently, the concept of photovoltaic (PV) self-powered gas sensing has aroused wider attentions due to room-temperature operation, low power consumption, small size and potential applications. The PV self-powered gas sensors integrate the photovoltaic effects and the gas sensing function into a single chip, which could truly achieve the goal of zero power consumption for an independent gas sensing device. As an emerging concept, the PV self-powered gas sensing has been achieved by using different strategies, including integrated gas sensor and solar cell, integrated light filter and solar cell, gas-sensitive heterojunction photovoltaics, and gas-sensitive lateral photovoltaics, respectively. The purpose of this review is to summarize recent advances of PV self-powered gas sensing and also remark on the directions for future research in this topic.
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