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Register a new userCharacterization of Silicon Drift Detectors with Electrons for the TRISTAN Project
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Sterile neutrinos are a minimal extension of the Standard Model of Particle Physics. A promising model-independent way to search for sterile neutrinos is via high-precision beta spectroscopy. The Karlsruhe Tritium Neutrino (KATRIN) experiment, equipped with a novel multi-pixel silicon drift detector focal plane array and read-out system, named the TRISTAN detector, has the potential to supersede the sensitivity of previous laboratory-based searches. In this work we present the characterization of the first silicon drift detector prototypes with electrons and we investigate the impact of uncertainties of the detectors response to electrons on the final sterile neutrino sensitivity.
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This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and the bias voltage is investigated here. A timing precision from 30 ps to 100 ps, depending on the pixel capacitance, has been measured at a bias voltage of 180 V. Timing precision has also been measured as a function of the bias voltage.
A detailed study of charge collection efficiency has been performed on the Silicon Drift Detectors (SDD) of the ALICE experiment. Three different methods to study the collected charge as a function of the drift time have been implemented. The first approach consists in measuring the charge at different injection distances moving an infrared laser by means of micrometric step motors. The second method is based on the measurement of the charge injected by the laser at fixed drift distance and varying the drift field, thus changing the drift time. In the last method, the measurement of the charge deposited by atmospheric muons is used to study the charge collection efficiency as a function of the drift time. The three methods gave consistent results and indicated that no charge loss during the drift is observed for the sensor types used in 99% of the SDD modules mounted on the ALICE Inner Tracking System. The atmospheric muons have also been used to test the effect of the zero-suppression applied to reduce the data size by erasing the counts in cells not passing the thresholds for noise removal. As expected, the zero suppression introduces a dependence of the reconstructed charge as a function of drift time because it cuts the signal in the tails of the electron clouds enlarged by diffusion effects. These measurements allowed also to validate the correction for this effect extracted from detailed Monte Carlo simulations of the detector response and applied in the offline data reconstruction.
Silicon Drift Detectors, widely employed in high-resolution and high-rate X-ray applications, are considered here with interest also for electron detection. The accurate measurement of the tritium beta decay is the core of the TRISTAN (TRitium Investigation on STerile to Active Neutrino mixing) project. This work presents the characterization of a single-pixel SDD detector with a mono-energetic electron beam obtained from a Scanning Electron Microscope. The suitability of the SDD to detect electrons, in the energy range spanning from few keV to tens of keV, is demonstrated. Experimental measurements reveal a strong effect of the detectors entrance window structure on the observed energy response. A detailed detector model is therefore necessary to reconstruct the spectrum of an unknown beta-decay source.
The response of silicon drift detectors (SDDs), which were mounted together with their preamplifiers inside a vacuum chamber, was studied in a temperature range from 100 K to 200 K. In particular, the energy resolution could be stabilized to about 150 eV at 6 keV between 130 K and 200 K, while the time resolution shows a temperature dependence of T^3 in this temperature range. To keep a variation of the X-ray peak positions within 1 eV, it is necessary to operate the preamplifier within a stability of 1 K around 280 K. A detailed investigation of this temperature influences on SDDs and preamplifiers is presented.
The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 3 x 10 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 {mu}m and backside metallized, was operated at a voltage of 180 V. The tests on a beam line of minimum ionizing particles show a detection efficiency greater than 99.9 % and a time resolution down to 110 ps.
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