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Register a new userTemperature dependencies of the energy and time resolution of silicon drift detectors
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The response of silicon drift detectors (SDDs), which were mounted together with their preamplifiers inside a vacuum chamber, was studied in a temperature range from 100 K to 200 K. In particular, the energy resolution could be stabilized to about 150 eV at 6 keV between 130 K and 200 K, while the time resolution shows a temperature dependence of T^3 in this temperature range. To keep a variation of the X-ray peak positions within 1 eV, it is necessary to operate the preamplifier within a stability of 1 K around 280 K. A detailed investigation of this temperature influences on SDDs and preamplifiers is presented.
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A detailed study of charge collection efficiency has been performed on the Silicon Drift Detectors (SDD) of the ALICE experiment. Three different methods to study the collected charge as a function of the drift time have been implemented. The first approach consists in measuring the charge at different injection distances moving an infrared laser by means of micrometric step motors. The second method is based on the measurement of the charge injected by the laser at fixed drift distance and varying the drift field, thus changing the drift time. In the last method, the measurement of the charge deposited by atmospheric muons is used to study the charge collection efficiency as a function of the drift time. The three methods gave consistent results and indicated that no charge loss during the drift is observed for the sensor types used in 99% of the SDD modules mounted on the ALICE Inner Tracking System. The atmospheric muons have also been used to test the effect of the zero-suppression applied to reduce the data size by erasing the counts in cells not passing the thresholds for noise removal. As expected, the zero suppression introduces a dependence of the reconstructed charge as a function of drift time because it cuts the signal in the tails of the electron clouds enlarged by diffusion effects. These measurements allowed also to validate the correction for this effect extracted from detailed Monte Carlo simulations of the detector response and applied in the offline data reconstruction.
Sterile neutrinos are a minimal extension of the Standard Model of Particle Physics. A promising model-independent way to search for sterile neutrinos is via high-precision beta spectroscopy. The Karlsruhe Tritium Neutrino (KATRIN) experiment, equipped with a novel multi-pixel silicon drift detector focal plane array and read-out system, named the TRISTAN detector, has the potential to supersede the sensitivity of previous laboratory-based searches. In this work we present the characterization of the first silicon drift detector prototypes with electrons and we investigate the impact of uncertainties of the detectors response to electrons on the final sterile neutrino sensitivity.
Silicon Drift Detectors, widely employed in high-resolution and high-rate X-ray applications, are considered here with interest also for electron detection. The accurate measurement of the tritium beta decay is the core of the TRISTAN (TRitium Investigation on STerile to Active Neutrino mixing) project. This work presents the characterization of a single-pixel SDD detector with a mono-energetic electron beam obtained from a Scanning Electron Microscope. The suitability of the SDD to detect electrons, in the energy range spanning from few keV to tens of keV, is demonstrated. Experimental measurements reveal a strong effect of the detectors entrance window structure on the observed energy response. A detailed detector model is therefore necessary to reconstruct the spectrum of an unknown beta-decay source.
Silicon drift detectors (SDDs) revolutionized spectroscopy in fields as diverse as geology and dentistry. For a subset of experiments at ultra-fast, x-ray free-electron lasers (FELs), SDDs can make substantial contributions. Often the unknown spectrum is interesting, carrying science data, or the background measurement is useful to identify unexpected signals. Many measurements involve only several discrete photon energies known a priori, allowing single event decomposition of pile-up and spectroscopic photon counting. We designed a pulse function and demonstrated that the signal amplitude and rise time are obtained for each pulse by fitting, thus removing the need for pulse shaping. By avoiding pulse shaping, rise times of tens of nanoseconds resulted in reduced pulse pile-up and allowed decomposition of remaining pulse pile-up at photon separation times down to hundreds of nanoseconds while yielding time-of-arrival information with precision of 10 nanoseconds. Waveform fitting yields simultaneously high energy resolution and high counting rates (2 orders of magnitude higher than current digital pulse processors). We showed that pile-up spectrum fitting is relatively simple and preferable to pile-up spectrum deconvolution. We developed a photon pile-up statistical model for constant intensity sources, extended it to variable intensity sources (typical for FELs) and used it to fit a complex pile-up spectrum. We subsequently developed a Bayesian pile-up decomposition method that allows decomposing pile-up of single events with up to 6 photons from 6 monochromatic lines with 99% accuracy. The usefulness of SDDs will continue into the x-ray FEL era of science. Their successors, the ePixS hybrid pixel detectors, already offer hundreds of pixels, each with similar performance to an SDD, in a compact, robust and affordable package
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for impinging minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a strong impact on the achievable time resolution. We present the result of measurements for LGADs of thickness between 20 micro-m and 50 micro-m. The data are fit to a formula that captures the impact of both electronic jitter and Landau fluctuations on the time resolution. The data illustrate the importance of having a saturated electron drift velocity and a large signal-to-noise in order to achieve good time resolution. Sensors of 20 micro-m thickness offer the potential of 10 to 15 ps time resolution per measurement, a significant improvement over the value for the 50 micro-m sensors that have been typically used to date.
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