Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userMicroscopic bath effects on noise spectra in semiconductor quantum dot qubits
109
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
When a system is thermally coupled to only a small part of a larger bath, statistical fluctuations of the temperature (more precisely, the internal energy) of this sub-bath around the mean temperature defined by the larger bath can become significant. We show that these temperature fluctuations generally give rise to 1/f-like noise power spectral density from even a single two-level system. We extend these results to a distribution of fluctuators, finding the corresponding modification to the Dutta-Horn relation. Then we consider the specific situation of charge noise in silicon quantum dot qubits and show that recent experimental data [E. J. Connors, et al., Phys. Rev. B 100, 165305 (2019)] can be modeled as arising from as few as two two-level fluctuators, and accounting for sub-bath size improves the quality of the fit.
rate research
Read More
We investigate the influence of the electron-phonon interaction on the decay dynamics of a quantum dot coupled to an optical microcavity. We show that the electron-phonon interaction has important consequences on the dynamics, especially when the quantum dot and cavity are tuned out of resonance, in which case the phonons may add or remove energy leading to an effective non-resonant coupling between quantum dot and cavity. The system is investigated using two different theoretical approaches: (i) a second-order expansion in the bare phonon coupling constant, and (ii) an expansion in a polaron-photon coupling constant, arising from the polaron transformation which allows an accurate description at high temperatures. In the low temperature regime we find excellent agreement between the two approaches. An extensive study of the quantum dot decay dynamics is performed, where important parameter dependencies are covered. We find that in general the electron-phonon interaction gives rise to a greatly increased bandwidth of the coupling between quantum dot and cavity. At low temperature an asymmetry in the quantum dot decay rate is observed, leading to a faster decay when the quantum dot has a larger energy than to the cavity. We explain this as due to the absence of phonon absorption processes. Furthermore, we derive approximate analytical expressions for the quantum dot decay rate, applicable when the cavity can be adiabatically eliminated. The expressions lead to a clear interpretation of the physics and emphasizes the important role played by the effective phonon density, describing the availability of phonons for scattering, in quantum dot decay dynamics. Based on the analytical expressions we present the parameter regimes where phonon effects are expected to be important. Also, we include all technical developments in appendices.
In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disorder from electrical transport. This brief note is far from being exhaustive and should be considered a first introduction to the materials challenges and opportunities towards a larger spin qubit quantum processor.
In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quantum circuits. In this Review we describe the current state of the art in semiconductor charge and spin qubits based on gate-controlled semiconductor quantum dots, shallow dopants, and color centers in wide band gap materials. We frame the relative strengths of the different semiconductor qubit implementations in the context of quantum simulations, computing, sensing and networks. By highlighting the status and future perspectives of the basic types of semiconductor qubits, this Review aims to serve as a technical introduction for non-specialists as well as a forward-looking reference for scientists intending to work in this field.
Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are required for quantum error correction and efficient algorithms. Here, we present evidence of adiabatic quantum-state transfer in a chain of semiconductor quantum-dot electron spins. By adiabatically modifying exchange couplings, we transfer single- and two-spin states between distant electrons in less than 127 ns. We also show that this method can be cascaded for spin-state transfer in long spin chains. Based on simulations, we estimate that the probability to correctly transfer single-spin eigenstates and two-spin singlet states can exceed 0.95 for the experimental parameters studied here. In the future, state and process tomography will be required to verify the transfer of arbitrary single qubit states with a fidelity exceeding the classical bound. Adiabatic quantum-state transfer is robust to noise and pulse-timing errors. This method will be useful for initialization, state distribution, and readout in large spin-qubit arrays for gate-based quantum computing. It also opens up the possibility of universal adiabatic quantum computing in semiconductor quantum-dot spin qubits.
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum information we present an architecture based on shared control and a scalable number of lines. Crucially, the control lines define the qubit grid, such that no local components are required. Our design enables qubit coupling beyond nearest neighbors, providing prospects for non-planar quantum error correction protocols. Fabrication is based on a three-layer design to define qubit and tunnel barrier gates. We show that a double stripline on top of the structure can drive high-fidelity single-qubit rotations. Qubit addressability and readout are enabled by self-aligned inhomogeneous magnetic fields induced by direct currents through superconducting gates. Qubit coupling is based on the exchange interaction, and we show that parallel two-qubit gates can be performed at the detuning noise insensitive point. While the architecture requires a high level of uniformity in the materials and critical dimensions to enable shared control, it stands out for its simplicity and provides prospects for large-scale quantum computation in the near future.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
