No Arabic abstract
Magnetoresistive (xMR) sensors find extensive application in science and industry, replacing Hall sensors in various low field environments. While there have been some efforts in increasing the dynamic field range of xMR sensors, Hall sensors remain to dominate high field applications due to their wide linear range. Using a perpendicular magnetized reference system and an in-plane free layer allows us to overcome this disadvantage of xMR sensors, and, furthermore, investigate spin-canting effects in interlayer exchange coupled perpendicular synthetic antiferromagnets (p-SAF). We created p-SAFs with exchange coupling fields of up to 10 kOe, based on magnetic Co/Pt multilayer systems. The p-SAFs are either designed as single p-SAFs, where two Co/Pt multilayers are interlayer exchange coupled via a 4 {AA} thick Ru spacer, or as double p-SAFs, where an additional Co layer is interlayer exchange coupled to the top multilayer. These p-SAFs are used for giant magnetoresistance (GMR) sensors with wide dynamic field range. By using a p-SAF as the reference system and employing an in-plane magnetic layer as the GMRs free layer, the linear range can be effectively increased limited only by the p-SAFs switching fields. Additionally, the magnetic anisotropy of the in-plane free layer is fully controlled, which allows saturation fields by design. Different configurations were investigated, ranging from free layer magnetic saturation at lower to far higher fields than the p-SAFs switching fields. We can show through micromagnetic simulations that certain GMR transfer curves are dominated by spin-canting effects in the interlayer exchange coupled reference system. Finally, our simulation results lay out the correlation of the p-SAFs design parameters and its magnetization reversal behavior.
Plastic deformation of crystals is a physical phenomenon, which has immensely driven the development of human civilisation since the onset of the Chalcolithic period. This process is primarily governed by the motion of line defects, called dislocations. Each dislocation traps a quantum of plastic deformation expressible in terms of its Burgers vector[1,2]. Theorising the mechanisms of dislocation motion at the atomistic scales of length and time remains a challenging task on account of the extreme complexities associated with the dynamics. We present a new concept of modelling a moving dislocation as the dynamic distribution of the elastic field singularity within the span of the Burgers vector. Surprisingly, numerical implementation of this model for the periodic expansion-shrinkage cycle of the singularity is found to exhibit an energetics, which resembles that of a dislocation moving in the presence of the Peierls barrier[1-4]. The singularity distribution is shown to be the natural consequence under the external shear stress. Moreover, in contrast to the conventional assumption, here the calculations reveal a significant contribution of the linear elastic region surrounding the core towards the potential barrier.
Vertical packaging of multiple Giant Magnetoresistance (multi-GMR) stacks is a very interesting noise reduction strategy for local magnetic sensor measurements, which has not been reported experimentally so far. Here, we have fabricated multi-GMR sensors (up to 12 repetitions) keeping good GMR ratio, linearity and low roughness. From magnetotransport measurements, two different resistance responses have been observed with a crossover around 5 GMR repetitions: step-like (N<5) and linear (N>5) behavior, respectively. With the help of micromagnetic simulations, we have analyzed in detail the two main magnetic mechanisms: the Neel coupling distribution induced by the roughness propagation and the additive dipolar coupling between the N free layers. Furthermore we have correlated the dipolar coupling mechanism, controlled by the number of GMRs (N) and lateral dimensions (width), to the sensor performance (sensitivity, noise and detectivity) in good agreement with analytical theory. The noise roughly decreases in multi-GMRs as 1/sqrt{N} in both regimes (low frequency 1/f and thermal noise). The sensitivity is even stronger reduced, scaling as 1/N, in the strong dipolar regime (narrow devices) while converges to a constant value in the weak dipolar regime (wide devices). Very interestingly, they are more robust against undesirable RTN noise than single GMRs at high voltages and the linearity can be extended towards much larger magnetic field range without dealing with the size and the reduction of GMR ratio. Finally, we have identified the optimal conditions for which multi-GMRs exhibit lower magnetic field detectivity than single GMRs: wide devices operating in the thermal regime where much higher voltage can be applied without generating remarkable magnetic noise.
A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized electrons and use this electronic control to change the transit time between electron injection and detection. A measurement of normalized magnetocurrent as a function of drift velocity is used with a simple exponential-decay model to argue that the lifetime obtained (~2 ns) is artificially lowered by electronic effects and is likely orders of magnitude higher.
We investigate theoretically and experimentally the static magnetic properties of single crystals of the molecular-based Single-Chain Magnet (SCM) of formula [Dy(hfac)$_{3}$NIT(C$_{6}$H$_{4}$OPh)]$_{infty}$ comprising alternating Dy$^{3+}$ and organic radicals. A peculiar inversion between maxima and minima in the angular dependence of the magnetic molar susceptibility $chi_{M}$ occurs on increasing temperature. Using information regarding the monomeric building block as well as an {it ab initio} estimation of the magnetic anisotropy of the Dy$^{3+}$ ion, this anisotropy-inversion phenomenon can be assigned to weak one-dimensional ferromagnetism along the chain axis. This indicates that antiferromagnetic next-nearest-neighbor interactions between Dy$^{3+}$ ions dominate, despite the large Dy-Dy separation, over the nearest-neighbor interactions between the radicals and the Dy$^{3+}$ ions. Measurements of the field dependence of the magnetization, both along and perpendicularly to the chain, and of the angular dependence of $chi_{M}$ in a strong magnetic field confirm such an interpretation. Transfer matrix simulations of the experimental measurements are performed using a classical one-dimensional spin model with antiferromagnetic Heisenberg exchange interaction and non-collinear uniaxial single-ion anisotropies favoring a canted antiferromagnetic spin arrangement, with a net magnetic moment along the chain axis. The fine agreement obtained with experimental data provides estimates of the Hamiltonian parameters, essential for further study of the dynamics of rare-earths based molecular chains.
We present measurements of the electrical resistivity, $rho$, in epitaxial Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature, $T$. The $rho(T)$ curves display hysteretic behavior in certain temperature range, which is film thickness dependent. The hysteresis are related to the confinement of quantized incommensurate spin density waves (ISDW) in the film thickness. Our important finding is to experimentally show that the temperature $T_{mid}$ where the ISDW changes from $N$ to $N$,+,1 nodes {it decreases} as the film thickness {it increases}. Identifying $T_{mid}$ with a first order transition between ISDW states with $N$ and $N$,+,1 nodes, and using a Landau approach to the free energy of the ISDW together with Monte Carlo simulations, we show that the system at high temperatures explores all available modes for the ISDW, freezing out in one particular mode at a transition temperature that indeed decreases with film thickness, $L$. The detailed dependence of $T_{mid}(L)$ seems to depend rather strongly on the boundary conditions at the Cr film interfaces.