No Arabic abstract
The static and time-dependent behaviours of adhesively bonded polyethylene Double-Strap (DS) joints were investigated to assess the viability of this joint configuration relative to the Single-Lap (SL) joints. Both experiments and finite element simulations are conducted. First, we individually characterise the tensile and creep behaviour of the adhesive and adherent materials; an epoxy-based adhesive and polyethylene, respectively. This information is used to develop suitable constitutive models that are then implemented in the commercial finite element package ABAQUS by means of user material subroutines, UMATs. The numerical models are used to design the creep tests on the adhesive joints. Afterwards, an extensive experimental campaign is conducted where we characterise the static and creep behaviour of two joint configurations, SL and DS joints, and three selected values of the overlap length. In regard to the static case, results reveal an increase in the failure load with increasing overlap length, of up to 10% for an overlap length of 39 mm. Also, slightly better performance is observed for the SL joint configuration. For the creep experiments, we show that the DS adhesive joint configuration leads to much shorter elongations, relative to the SL joints. These differences diminish with increasing overlap length but remain substantial in all cases. In both joint configurations, the elongation increases with decreasing overlap length. For instance, increasing the overlap length to 39 mm led to a 50% and a 30% reduction in elongation for SL and DS joints, respectively. Moreover, the numerical predictions show a good agreement with the experiments. The stress redistribution is investigated and it is found that the shear stress is highly sensitive to the testing time, with differences being more noticeable for the DS joint system.
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform.
Previous studies indicate that the properties of graphene oxide (GO) can be significantly improved by enhancing its graphitic domain size through thermal diffusion and clustering of functional groups. Remarkably, this transition takes place below the decomposition temperature of the functional groups and thus allows fine-tuning of graphitic domains without compromising with the functionality of GO. By studying the transformation of GO under mild thermal treatment, we directly observe this size enhancement of graphitic domains from originally 40 nm2 to 200 nm2 through an extensive transmission electron microscopy (TEM) study. Additionally, we confirm the integrity of the functional groups during this process by comprehensive chemical analysis. A closer look into the process confirms the theoretically predicted relevance for the room temperature stability of GO. We further investigate the influence of enlarged graphitic domains on the hydration behaviour of GO and catalytic performance of single-atom catalysts supported by GO.
GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. TDTR is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by MBE on SiC, showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m2-K) is close to the highest values ever reported. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work paves the way for thermal transport across bonded interfaces, which will impact real-world applications of semiconductor integration and packaging.
For the first time bis-functionalization of graphene employing two successive reduction and covalent bond formation steps are reported. Both bulk functionalization in solution and functionalization of individual sheets deposited on surfaces have been carried out. Whereas in the former case attacks from both sides of the basal plane are possible and can lead to strain-free architectures, in the latter case, retro-functionalizations can get important when the corresponding anion of the addend represents a sufficiently good leaving group.
The creep behaviour of a creep-resistant AE42 magnesium alloy reinforced with Saffil short fibres and SiC particulates in various combinations has been examined in the longitudinal direction, i.e., the plane containing random fibre orientation was parallel to the loading direction, in the temperature range of 175-300 C at the stress levels ranging from 60 to 140 MPa using impression creep test technique. At 175 C, normal creep behaviour, i.e., strain rate decreasing with strain and then reaching a steady state, is observed at all the stresses employed. At 240 C, normal creep behaviour is observed up to 80 MPa and reverse creep behaviour, i.e., strain rate increasing with strain, then reaching a steady state and again decreasing, is observed above that stress. At 300 C, reverse creep behaviour is observed at all the stresses employed. This pattern remains the same for all the composites. The reverse creep behaviour is found to be associated with the fibre breakage. The stress exponent is found to be very high for all the composites. However, after taking the threshold stress into account, the stress exponent varies from 3.9 to 7.0, which suggests viscous glide and dislocation climb being the dominant creep mechanisms. The apparent activation energy Qc was not calculated due to insufficient data at any stress level either for normal or reverse creep behaviour. The creep resistance of the hybrid composites is found to be comparable to that of the composite reinforced with 20% Saffil short fibres at all the temperatures and stress levels investigated.