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We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based two-dimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density samples a response due to cyclotron resonance (CR) absorption dominates, while high density samples exhibit pronounced microwave-induced resistance oscillations (MIRO). Microwave transmission experiments serve as a complementary means of detecting the CR over the entire range of electron densities and as a reference for the band mass unrenormalized by interactions. Both CR and MIRO-associated features in the resistance permit extraction of the effective mass of electrons but yield two distinct values. The conventional cyclotron mass representing center-of-mass dynamics exhibits no change with density and coincides with the band electron mass of bulk ZnO, while MIRO mass reveals a systematic increase with lowering electron density consistent with renormalization expected in interacting Fermi liquids.
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Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage $V_{dc}$ is generated whenever the electron densities $n_{1,2}$ of the two metals are different, changing polarity at $n_1 approx n_2$. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.
Motivated by the recently discovered microwave-induced ``zero-resistance states in two-dimensional electron systems, we study the microwave photoconductivity of a two-dimensional electron gas (2DEG) subject to a unidirectional static periodic potential. The combination of this potential, the classically strong magnetic field, and the microwave radiation may result in an anisotropic negative conductivity of the 2DEG. Similar to the case of a smooth random potential, two mechanisms contribute to the negative photoconductivity. The displacement mechanism arises from electron transitions due to disorder-assisted microwave absorption and emission. The distribution-function mechanism arises from microwave-induced changes in the electron distribution. However, the replacement of a smooth random potential by the unidirectional one, leads to different relative strengths of the two contributions to the photoconductivity. The distribution function mechanism dominates the photoconductivity in the direction of the static potential modulation, while both mechanisms contribute equally strongly to the photoconductivity in the perpendicular direction. The unidirectionality of the static potential simplifies greatly the evaluation of the photoconductivities, which follow directly from Fermis golden rule.
Two-dimensional electron systems with fascinating properties exist in multilayers of standard semiconductors, on helium surfaces, and in oxides. Compared to the two-dimensional (2D) electron gases of semiconductors, the 2D electron systems in oxides are typically more strongly correlated and more sensitive to the microscopic structure of the hosting lattice. This sensitivity suggests that the oxide 2D systems are highly tunable by hydrostatic pressure. Here we explore the effects of hydrostatic pressure on the well-characterized 2D electron system formed at LaAlO$_{3}$ -SrTiO$_{3}$ interfaces[1] and measure a pronounced, unexpected response. Pressure of $sim$2 GPa reversibly doubles the 2D carrier density $n_{s}$ at 4 K. Along with the increase of $n_{s}$, the conductivity and mobility are reduced under pressure. First-principles pressure simulations reveal the same behavior of the carrier density and suggest a possible mechanism of the mobility reduction, based on the dielectric properties of both materials and their variation under external pressure.
We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the systems strong electron-electron interaction. The increase has a remarkable resemblance to the enhancement of the spin susceptibility and establishes the analogy between the spin and valley degrees of freedom.
A 2D electron system in a quantized magnetic field can be driven by microwave radiation into a non-equilibrium state with strong magnetooscillations of the dissipative conductivity. We demonstrate that in such system a negative conductivity can coexist with a positive diffusion coefficient. In a finite system, solution of coupled electrostatic and linear transport problems shows that the diffusion can stabilize a state with negative conductivity. Specifically, this happens when the system size is smaller than the absolute value of the non-equilibrium screening length that diverges at the point where the conductivity changes sign. We predict that a negative resistance can be measured in such a state. Further, for a non-zero difference between the work functions of two contacts, we explore the distribution of the electrostatic potential and of the electron density in the sample. We show that in the diffusion-stabilized regime of negative conductivity the system splits into two regions with opposite directions of electric field. This effect is a precursor of the domain structure that has been predicted to emerge spontaneously in the microwave-induced zero-resistance states.
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