Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSpin transport in a lateral spin valve with a suspended Cu channel
95
0
0.0
(
0
)
Authors
Kenjiro Matsuki
Ask ChatGPT about the research
No Arabic abstract
We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its magnitude is comparable to that of a conventional fixed Cu lateral spin valve. The spin diffusion length in the suspended Cu channel is estimated to be 340 nm at room temperature from the spin signal dependence on the distance between the ferromagnetic injector and detector electrodes. This value is found to be slightly shorter than in a fixed Cu. The decrease in the spin diffusion length in the suspended Cu channel is attributed to an increase in spin scattering originating from naturally oxidized Cu at the bottom of the Cu channel.
rate research
Read More
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while that for a dilute permalloy ([Ni0.83Fe0.17]0.6Cu0.4) free layer device is 0.475 ns. A ballistic macrospin model can capture the data trends with a reduced spin torque asymmetry parameter, reduced spin polarization and increased Gilbert damping for the dilute permalloy free layer relative to the permalloy devices. Our study demonstrates that reducing the magnetization of the free layer increases the switching speed while greatly reducing the switching energy and shows a promising route toward even lower power magnetic memory devices compatible with superconducting electronics.
We have studied the proximity-induced superconducting triplet pairing in CoO$_x$/Py1/Cu/Py2/Cu/Pb spin-valve structure (where Py = Ni$_{0.81}$Fe$_{0.19}$). By optimizing the parameters of this structure we found a triplet channel assisted full switching between the normal and superconducting states. To observe an isolated triplet spin-valve effect we exploited the oscillatory feature of the magnitude of the ordinary spin-valve effect $Delta T_c$ in the dependence of the Py2-layer thickness $d_{Py2}$. We determined the value of $d_{Py2}$ at which $Delta T_c$ caused by the ordinary spin-valve effect (the difference in the superconducting transition temperature $T_c$ between the antiparallel and parallel mutual orientation of magnetizations of the Py1 and Py2 layers) is suppressed. For such a sample a pure triplet spin-valve effect which causes the minimum in $T_c$ at the orthogonal configuration of magnetizations has been observed.
The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic parameter of this conversion. We have performed experiments of the conversion from spin into charge currents by the SHE in lateral spin valve structures. We present experimental results on the extrinsic SHEs induced by doping nonmagnetic metals, Cu or Ag, with impurities having a large spin-orbit coupling, Bi or Pb, as well as results on the intrinsic SHE of Au. The SH angle induced by Bi in Cu or Ag is negative and particularly large for Bi in Cu, 10 times larger than the intrinsic SH angle in Au. We also observed a large SH angle for CuPb but the SHE signal disappeared in a few days. Such an aging effect could be related to a fast mobility of Pb in Cu and has not been observed in CuBi alloys.
We have experimentally elucidated the correlation between inverse and direct Edelstein Effects (EEs) at Bi2O3/Cu interface by means of spin absorption method using lateral spin valve structure. The conversion coefficient {lambda} for the inverse EE is determined by the electron momentum scattering time in the interface, whereas the coefficient q for the direct EE is by the spin ejection time from the interface. For the Bi2O3/Cu interface, the spin ejection time was estimated to be ~ 53 fs and the momentum scattering time ~ 13 fs at room temperature, both of which contribute to the total momentum relaxation time that defines the resistivity of the interface. The effective spin Hall angle for the Bi2O3/Cu interface amounts to ~ 10% which is comparable to commonly used spin Hall material such as platinum. Interesting to note is that the experimentally obtained Edelstein resistances given by the output voltage divided by the injection current for direct and inverse effects are the same. Analysis based on our phenomenological model reveals that the larger the momentum scattering time, the more efficient direct EE; and the smaller spin ejection time, the more efficient inverse EE.
We fabricate a microscale electromechanical system, in which a suspended superconducting membrane, treated as a mechanical oscillator, capacitively couples to a superconducting microwave resonator. As the microwave driving power increases, nonmonotonic dependence of the resonance frequency of the mechanical oscillator on the driving power has been observed. We also demonstrate the optical switching of the resonance frequency of the mechanical oscillator. Theoretical models for qualitative understanding of our experimental observations are presented. Our experiment may pave the way for the application of a mechanical oscillator with its resonance frequency controlled by the electromagnetic and/or optical fields, such as a microwave-optical interface and a controllable element in a superqubit-mechanical oscillator hybrid system.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
