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Register a new userPurely in-plane ferroelectricity in monolayer SnS at room temperature
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2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric resistive switching for out-of-plane 2D ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, a micrometer-size monolayer SnS is grown on mica by physical vapor deposition, and in-plane ferroelectric switching is demonstrated with a two-terminal device at room temperature (RT). SnS has been commonly regarded to exhibit the odd-even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust RT ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers. The lack of the odd-even effect probably originates from the interaction with the mica substrate, suggesting the possibility of controlling the stacking sequence of multilayer SnS, going beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a new platform for in-plane ferroelectrics.
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Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to produce large and continuously variable strain states, thus limiting the potential for designing and tuning the desired properties of ferroelectric films. Here, we observe and explore dynamic strain-induced ferroelectricity in SrTiO$_3$ by laminating freestanding oxide films onto a stretchable polymer substrate. Using a combination of scanning probe microscopy, optical second harmonic generation measurements, and atomistic modeling, we demonstrate robust room-temperature ferroelectricity in SrTiO$_3$ with 2.0% uniaxial tensile strain, corroborated by the notable features of 180{deg} ferroelectric domains and an extrapolated transition temperature of 400 K. Our work reveals the enormous potential of employing oxide membranes to create and enhance ferroelectricity in environmentally benign lead-free oxides, which hold great promise for applications ranging from non-volatile memories and microwave electronics.
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Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO3, a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental mapping with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of YFe antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Furthermore, a vertically aligned nanocomposite consisting of pillars of a magnetoelastic oxide CoFe2O4 embedded epitaxially in the YFeO3 matrix exhibits both robust ferroelectricity and ferrimagnetism at room temperature, as well as a noticeable strain-mediated magnetoelectric coupling effect. Our work uncovers the distinctive role of antisite defects in providing a novel mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications.
Polycrystalline samples of CuCrO2 were synthesized by solid state reaction method. Temperature dependent dielectric measurements, synchrotron x-ray diffraction (SXRD), pyroelectric current and Raman measurements have been performed on these samples. Evidences of the presence of relaxor type ferroelectricity, which otherwise have gone unnoticed in CuCrO2 system (a member of delafossite family) near room temperature, have been presented. Presence of broad maximum in dielectric permittivity and its frequency dispersion indicates relaxor-type ferroelectricity in CuCrO2 near room temperature. Careful analysis of temperature dependent SXRD data and Raman spectroscopic data indicates that the distorted CrO6 octahdera, is giving rise to strain in the sample. Due to this strain, polar regions are forming in an otherwise non-polar matrix, which is giving rise to relaxor type ferroelectricity in the sample. Regularization of CrO6 octahedra and disappearance of disorder induced peak in Raman spectra at high temperatures could be the reason behind observed dielectric anomaly in this sample. Present investigations propose that relaxor type ferroelectricity near room temperature is an inherent property of the CuCrO2 system, making it a fascinating material to be explored further.
Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-doping concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.
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