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Register a new userStrain-Induced Room-Temperature Ferroelectricity in SrTiO$_3$ Membranes
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Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to produce large and continuously variable strain states, thus limiting the potential for designing and tuning the desired properties of ferroelectric films. Here, we observe and explore dynamic strain-induced ferroelectricity in SrTiO$_3$ by laminating freestanding oxide films onto a stretchable polymer substrate. Using a combination of scanning probe microscopy, optical second harmonic generation measurements, and atomistic modeling, we demonstrate robust room-temperature ferroelectricity in SrTiO$_3$ with 2.0% uniaxial tensile strain, corroborated by the notable features of 180{deg} ferroelectric domains and an extrapolated transition temperature of 400 K. Our work reveals the enormous potential of employing oxide membranes to create and enhance ferroelectricity in environmentally benign lead-free oxides, which hold great promise for applications ranging from non-volatile memories and microwave electronics.
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Polycrystalline samples of CuCrO2 were synthesized by solid state reaction method. Temperature dependent dielectric measurements, synchrotron x-ray diffraction (SXRD), pyroelectric current and Raman measurements have been performed on these samples. Evidences of the presence of relaxor type ferroelectricity, which otherwise have gone unnoticed in CuCrO2 system (a member of delafossite family) near room temperature, have been presented. Presence of broad maximum in dielectric permittivity and its frequency dispersion indicates relaxor-type ferroelectricity in CuCrO2 near room temperature. Careful analysis of temperature dependent SXRD data and Raman spectroscopic data indicates that the distorted CrO6 octahdera, is giving rise to strain in the sample. Due to this strain, polar regions are forming in an otherwise non-polar matrix, which is giving rise to relaxor type ferroelectricity in the sample. Regularization of CrO6 octahedra and disappearance of disorder induced peak in Raman spectra at high temperatures could be the reason behind observed dielectric anomaly in this sample. Present investigations propose that relaxor type ferroelectricity near room temperature is an inherent property of the CuCrO2 system, making it a fascinating material to be explored further.
We synthesized strontium titanate SrTiO$_3$ (STO), Zr doped $text{Sr}_text{1-x}text{Zr}_text{x}text{Ti}text{O}_3$ and (Zr, Ni) co-doped $text{Sr}_text{1-x}text{Zr}_text{x}text{Ti}_text{1-y}text{Ni}_text{y}text{O}_3$ samples using solid state reaction technique to report their structural, electrical and magnetic properties. The cubic $Pm$-$3m$ phase of the synthesized samples has been confirmed using Rietveld analysis of the powder X-ray diffraction pattern. The grain size of the synthesized materials was reduced significantly due to Zr doping as well as (Zr, Ni) co-doping in STO. The chemical species of the samples were identified using energy-dispersive X-ray spectroscopy. We observed forbidden first order Raman scattering at 148, 547 and 797 cm$^{-1}$ which may indicate nominal loss of inversion symmetry in cubic STO. The absence of absorption at 500 cm$^{-1}$ and within 600-700 cm$^{-1}$ band in Fourier Transform Infrared spectra corroborates Zr and Ni as substitutional dopants in our samples. Due to 4% Zr doping in $text{Sr}_text{0.96}text{Zr}_text{0.04}text{Ti}text{O}_3$ sample dielectric constant, remnant electric polarization, remnant magnetization and coercivity were increased. Notably, in the case of 4% Zr and 10% Ni co-doping we have observed clearly the existence of both FE and FM hysteresis loops in $text{Sr}_{0.96}text{Zr}_{0.04}text{Ti}_{0.90}text{Ni}_{0.10}text{O}_3$ sample. In this co-doped sample, the remnant magnetization and coercivity were increased by $sim$1 and $sim$2 orders of magnitude respectively as compared to those of undoped STO. The coexistence of FE and FM orders in (Zr, Ni) co-doped STO might have the potential for interesting multiferroic applications.
We demonstrate that SrTiO$_3$ can be a platform for observing the bulk odd-frequency superconducting state owing to the multiorbital/multiband nature. We consider a three-orbital tight-binding model for SrTiO$_3$ in the vicinity of a ferroelectric critical point. Assuming an intraorbital spin-singlet $s$-wave superconducting order parameter, it is shown that the odd-frequency pair correlations are generated due to the intrinsic LS coupling which leads to the local orbital mixing. Furthermore, we show the existence of additional odd-frequency pair correlations in the ferroelectric phase, which is induced by an odd-parity orbital hybridization term proportional to the ferroelectric order parameter. We also perform a group theoretical classification of the odd-frequency pair amplitudes based on the fermionic and space group symmetries of the system. The classification table enables us to predict dominant components of the odd-frequency pair correlations based on the symmetry of the normal state Hamiltonian that we take into account. Furthermore, we show that experimental signatures of the odd-parity orbital hybridization, which is an essential ingredient for the ferroelectricity-induced odd-frequency pair correlations, can be observed in the spectral functions and density of states.
We investigated the effect of the tensile strain on the spin splitting at the n-type interface in LaAlO$_3$/SrTiO$_3$ in terms of the spin-orbit coupling coefficient $alpha$ and spin texture in the momentum space using first-principles calculations. We found that the $alpha$ could be controlled by the tensile strain and be enhanced up to 5 times for the tensile strain of 7%, and the effect of the tensile strain leads to a persistent spin helix, which has a long spin lifetime. These results support that the strain effect on LaAlO$_3$/SrTiO$_3$ is important for various applications such as spinFET and spin-to-charge conversion.
Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages >=20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.
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