No Arabic abstract
User-friendly single-photon sources with high photon-extraction efficiency are crucial building blocks for photonic quantum applications. For many of these applications, such as long-distance quantum key distribution, the use of single-mode optical fibers is mandatory, which leads to stringent requirements regarding the device design and fabrication. We report on the on-chip integration of a quantum dot microlens with a 3D-printed micro-objective in combination with a single-mode on-chip fiber coupler. The practical quantum device is realized by deterministic fabrication of the QD-microlens via in-situ electron-beam lithography and 3D two-photon laser writing of the on-chip micro-objective and fiber-holder. The QD with microlens is an efficient single-photon source, whose emission is collimated by the on-chip micro-objective. A second polymer microlens is located at the end facet of the single-mode fiber and ensures that the collimated light is efficiently coupled into the fiber core. For this purpose, the fiber is placed in the on-chip fiber chuck, which is precisely aligned to the QD-microlens thanks to the sub-$mu$m processing accuracy of high-resolution two-photon direct laser writing. This way, we obtain a fully integrated high-quality quantum device with broadband photon extraction efficiency, a single-mode fiber-coupling efficiency of 26%, a single-photon flux of 1.5 MHz at single-mode fibre output and a multi-photon probability of 13 % under pulsed optical excitation. In addition, the stable design of the developed fiber-coupled quantum device makes it highly attractive for integration into user-friendly plug-and-play quantum applications.
Future quantum technology relies crucially on building quantum networks with high fidelity. To achieve this challenging goal, it is of utmost importance to connect single quantum systems in a way such that their emitted single-photons overlap with the highest possible degree of coherence. This requires perfect mode overlap of the emitted light of different emitters, which necessitates the use of single mode fibers. Here we present an advanced manufacturing approach to accomplish this task: we combine 3D printed complex micro-optics such as hemispherical and Weierstrass solid immersion lenses as well as total internal reflection solid immersion lenses on top of single InAs quantum dots with 3D printed optics on single mode fibers and compare their key features. Interestingly, the use of hemispherical solid immersion lenses further increases the localization accuracy of the emitters to below 1 nm when acquiring micro-photoluminescence maps. The system can be joined together and permanently fixed. This integrated system can be cooled by dipping into liquid helium, by a Stirling cryocooler or by a closed-cycle helium cryostat without the necessity for optical windows, as all access is through the integrated single mode fiber. We identify the ideal optical designs and present experiments that prove excellent high-rate single-photon emission by high-contrast Hanbury Brown and Twiss experiments.
We present a numerical method for the accurate and efficient simulation of strongly localized light sources, such as quantum dots, embedded in dielectric micro-optical structures. We apply the method in order to optimize the photon extraction efficiency of a single-photon emitter consisting of a quantum dot embedded into a multi-layer stack with further lateral structures. Furthermore, we present methods to study the robustness of the extraction efficiency with respect to fabrication errors and defects.
Single-photon sources based on semiconductor quantum dots have emerged as an excellent platform for high efficiency quantum light generation. However, scalability remains a challenge since quantum dots generally present inhomogeneous characteristics. Here we benchmark the performance of fifteen deterministically fabricated single-photon sources. They display an average indistinguishability of 90.6 +/- 2.8 % with a single-photon purity of 95.4 +/- 1.5 % and high homogeneity in operation wavelength and temporal profile. Each source also has state-of-the-art brightness with an average first lens brightness value of 13.6 +/- 4.4 %. Whilst the highest brightness is obtained with a charged quantum dot, the highest quantum purity is obtained with neutral ones. We also introduce various techniques to identify the nature of the emitting state. Our study sets the groundwork for large-scale fabrication of identical sources by identifying the remaining challenges and outlining solutions.
Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic technology potentially enabling large scale fabrication of semiconductor-based, site-controlled, scalable arrays of electrically driven sources of polarization-entangled photons, with the potential to encode quantum information. The design of the sources is based on quantum dots grown in micron-sized pyramidal recesses along the crystallographic direction (111)B theoretically ensuring high symmetry of the quantum dots - the condition for actual bright entangled photon emission. A selective electric injection scheme in these non-planar structures allows obtaining a high density of light-emitting diodes, with some producing entangled photon pairs also violating Bells inequality. Compatibility with semiconductor fabrication technology, good reproducibility and control of the position make these devices attractive candidates for integrated photonic circuits for quantum information processing.
The photon statistics of CdSe/CdS dot-in-rods nanocrystals is studied with a method involving post-selection of the photon detection events based on the photoluminescence count rate. We show that flickering between two states needs to be taken into account to interpret the single-photon emission properties. With post-selection we are able to identify two emitting states: the exciton and the charged exciton (trion), characterized by different lifetimes and different second order correlation functions. Measurements of the second order autocorrelation function at zero delay with post- selection shows a degradation of the single photon emission for CdSe/CdS dot-in-rods in a charged state that we explain by deriving the neutral and charged biexciton quantum yields.