No Arabic abstract
Recent discovery of topological superconductors (TSCs) has sparked enormous interest. Realization of TSC requires a delicate tuning of multiple microscopic parameters, which remains a great challenge. Here, we develop a first-principles approach to quantify realistic conditions of TSC by solving self-consistently Bogoliubov-de Gennes equation based on Wannier function construction of band structure, in presence of Rashba spin-orbit coupling, Zeeman splitting and electron-phonon coupling. We further demonstrate the power of this new method by predicting the Mn-doped GeTe (Ge$_{1-x}$Mn$_x$Te) monolayer - a well-known dilute magnetic semiconductor showing superconductivity under hole doping - to be a Class D TSC with Chern number of -1 and chiral Majorana edge modes. By constructing a first-principles phase diagram in the parameter space of temperature and Mn concentration, we propose the TSC phase can be induced at a lower-limit transition temperature of ~40 mK and the Mn concentration of $x$~0.015%. Our approach can be generally applied to TSCs with a phonon-mediated pairing, providing useful guidance for future experiments.
We theoretically study superconductivity in UTe$_2$, which is a recently-discovered strong candidate for an odd-parity spin-triplet superconductor. Theoretical studies for this compound faced difficulty because first-principles calculations predict an insulating electronic state, incompatible with superconducting instability. To overcome this problem, we take into account electron correlation effects by a GGA$+U$ method and show the insulator-metal transition by Coulomb interaction. Using Fermi surfaces obtained as a function of $U$, we clarify topological properties of possible superconducting states. Fermi surface formulas for the three-dimensional winding number and three two-dimensional $mathbb{Z}_2$ numbers indicate topological superconductivity at an intermediate $U$ for all the odd-parity pairing symmetry in the $Immm$ space group. Symmetry and topology of superconducting gap node are analyzed and the gap structure of UTe$_2$ is predicted. Topologically protected low-energy excitations are highlighted, and experiments by bulk and surface probes are proposed to link Fermi surfaces and pairing symmetry. Based on the results, we also discuss multiple superconducting phases under magnetic fields, which were implied by recent experiments.
A two dimensional (2D) Group-VI Te monolayer, tellurene, is predicted by using the first-principles calculations, which consists of planner four-membered and chair-like six-membered rings arranged alternately in a 2D lattice. The phonon spectra calculations, combined with ab initio molecular dynamics (MD) simulations, demonstrate that tellurene is kinetically very stable. The tellurene shows a desirable direct band gap of 1.04 eV and its band structure can be effectively tuned by strain. The effective mass calculations imply that tellurene should also exhibit a relatively high carrier mobility, e.g. compared with MoS2. The significant direct band gap and the high carrier mobility imply that tellurene is a very promising candidate for a new generation of nanoelectronic devices.
Insight into why superconductivity in pristine and doped monolayer graphene seems strongly suppressed has been central for the recent years various creative approaches to realize superconductivity in graphene and graphene-like systems. We provide further insight by studying electron-phonon coupling and superconductivity in doped monolayer graphene and hexagonal boron nitride based on intrinsic phonon modes. Solving the graphene gap equation using a detailed model for the effective attraction based on electron tight binding and phonon force constant models, the various system parameters can be tuned at will. Consistent with results in the literature, we find slight gap modulations along the Fermi surface, and the high energy phonon modes are shown to be the most significant for the superconductivity instability. The Coulomb interaction plays a major role in suppressing superconductivity at realistic dopings. Motivated by the direct onset of a large density of states at the Fermi surface for small charge dopings in hexagonal boron nitride, we also calculate the dimensionless electron-phonon coupling strength there, but the comparatively large density of states cannot immediately be capitalized on, and the charge doping necessary to obtain significant electron-phonon coupling is similar to the value in graphene.
We predict by first principles calculations that the recently prepared borophene is a pristine two-dimensional (2D) monolayer superconductor, in which the superconductivity can be significantly enhanced by strain and charge carrier doping. The intrinsic metallic ground state with high density of states at Fermi energy and strong Fermi surface nesting lead to sizeable electron-phonon coupling, making the freestanding borophene superconduct with $T_c$ close to 19.0 K. The tensile strain can increase $T_c$ to 27.4 K, while the hole doping can notably increase $T_c$ to 34.8 K. The results indicate that the borophene grown on substrates with large lattice parameters or under photoexcitation can show enhanced superconductivity with $T_c$ far more above liquid hydrogen temperature of 20.3 K, which will largely broaden the applications of such novel material.
The recent reports on 203 K superconductivity in compressed hydrogen sulfide, H$_3$S, has attracted great interest in sulfur-hydrogen system under high pressure. Here, we investigated the superconductivity of P-doped and Cl-doped H$_3$S using the first-principles calculations based on the supercell method, which gives more reliable results on the superconductivity in doped systems than the calculations based on the virtual crystal approximation reported earlier. The superconducting critical temperature is increased from 189 to 212 K at 200 GPa in a cubic $Imbar{3}m$ phase by the 6.25 % P doping, whereas it is decreased to 161 K by the 6.25 % Cl doping. Although the Cl doping weakens the superconductivity, it causes the $Imbar{3}m$ phase to be stabilized in a lower pressure region than that in the non-doped H$_3$S.