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Register a new userEnhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions
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We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 450% at 10K and 100% at room temperature (RT), which is much higher than that of the pure PVDF based device (70% at 10K and 7% at RT). OMFTJs based on the PVDF:Fe3O4 nanocomposite could open new functionalities in smart multiferroic devices via the interplay of the magnetism of nanoparticle with the ferroelectricity of the organic barrier.
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In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications.
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm range, ferroelectric/dielectric double layer sandwiched between two symmetric metal electrodes are used. Due to the decoupling of the ferroelectric polarization storage layer and a dielectric tunneling layer with a higher bandgap, a significant TER ratio between the two polarization states is obtained. By exploiting previously reported switching behaviour and the gradual tunability of the resistance, FTJs can be used as potential candidates for the emulation of synapses for neuromorphic computing in spiking neural networks. The implementation of two major components of a synapse are shown: long term depression/potentiation by varying the amplitude/width/number of voltage pulses applied to the artificial FTJ synapse, and spike-timing-dependent-plasticity curves by applying time-delayed voltages at each electrode. These experimental findings show the potential of spiking neural networks and neuromorphic computing that can be implemented with hafnia-based FTJs.
Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized. However, there is still a lack of understanding of the transport properties in OMFTJs, especially the interplay between the ferroelectric domain structure in the organic barrier and the spin-polarized electron tunneling through the barrier. Here, we report on a systematic study of the temperature dependent transport behavior in La0.6Sr0.4MnO3/PVDF/Co OMFTJs. It is found that the thermal fluctuation of the ferroelectric domains plays an important role on the transport properties. When T>120K, the opposite temperature dependence of resistance for in up and down ferroelectric polarization states results in a rapid diminishing of tunneling electroresistance (TER). These results contribute to the understanding of the transport properties for designing high performance OMFTJs for memristor and spintronics applications.
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction.
Charge separation is a critical process for achieving high efficiencies in organic photovoltaic cells. The initial tightly bound excitonic electron-hole pair has to dissociate fast enough in order to avoid photocurrent generation and thus power conversion efficiency loss via geminate recombination. Such process takes place assisted by transitional states that lie between the initial exciton and the free charge state. Due to spin conservation rules these intermediate charge transfer states typically have singlet character. Here we propose a donor-acceptor model for a generic organic photovoltaic cell in which the process of charge separation is modulated by a magnetic field which tunes the energy levels. The impact of a magnetic field is to intensify the generation of charge transfer states with triplet character via inter-system crossing. As the ground state of the system has singlet character, triplet states are recombination-protected, thus leading to a higher probability of successful charge separation. Using the open quantum systems formalism we demonstrate that not only the population of triplet charge transfer states grows in the presence of a magnetic field, but also how the power outcome of an organic photovoltaic cell is in that way increased.
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