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Register a new userEpitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
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Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency > 99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding fxQ products and phonon lifetimes up to 1.36 x 10^17 Hz and 500 microseconds respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits.
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Ultrasound detection is one of the most important nondestructive subsurface characterization tools of materials, whose goal is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators attracted attention as loudspeaker and ultrasound radio, showing its potential to realize communication systems with air-carried ultrasound. Here we show a graphene resonator that detects ultrasound vibrations propagating through the substrate on which it was fabricated. We achieve ultimately a resolution of $approx7$~pm/$mathrm{sqrt Hz}$ in ultrasound amplitude at frequencies up to 100~MHz. Thanks to an extremely high nonlinearity in the mechanical restoring force, the resonance frequency itself can also be used for ultrasound detection. We observe a shift of 120~kHz at a resonance frequency of 65~MHz for an induced vibration amplitude of 100~pm with a resolution of 25~pm. Remarkably, the nonlinearity also explains the generally observed asymmetry in the resonance frequency tuning of the resonator when pulled upon with an electrostatic gate. This work puts forward a sensor design that fits onto an atomic force microscope cantilever and therefore promises direct ultrasound detection at the nanoscale for nondestructive subsurface characterization.
The coherent manipulation of acoustic waves on the nanoscale usually requires multilayers with thicknesses and interface roughness defined down to the atomic monolayer. This results in expensive devices with predetermined functionality. Nanoscale mesoporous materials present high surface-to-volume ratio and tailorable mesopores, which allow the incorporation of chemical functionalization to nanoacoustics. However, the presence of pores with sizes comparable to the acoustic wavelength is intuitively perceived as a major roadblock in nanoacoustics. Here we present multilayered nanoacoustic resonators based on mesoporous SiO$_2$ thin-films showing acoustic resonances in the 5-100 GHz range. We characterize the acoustic response of the system using coherent phonon generation experiments. Despite resonance wavelengths comparable to the pore size, we observe for the first time unexpectedly well-defined acoustic resonances with Q-factors around 10. Our results open the path to a promising platform for nanoacoustic sensing and reconfigurable acoustic nanodevices based on soft, inexpensive fabrication methods.
Microwave frequency acousto-optic modulation is realized by exciting high overtone bulk acoustic wave resonances (HBAR resonances) in the photonic stack. These confined mechanical stress waves transmit exhibit vertically transmitting, high quality factor (Q) acoustic Fabry Perot resonances that extend into the Gigahertz domain, and offer stress-optical interaction with the optical modes of the microresonator. Although HBAR are ubiquitously used in modern communication, and often exploited in superconducting circuits, this is the first time they have been incorporated on a photonic circuit based chip. The electro-acousto-optical interaction observed within the optical modes exhibits high actuation linearity, low actuation power and negligible crosstalk. Using the electro-acousto-optic interaction, fast optical resonance tuning is achieved with sub-nanosecond transduction time. By removing the silicon backreflection, broadband acoustic modulation at 4.1 and 8.7 GHz is realized with a 3 dB bandwidth of 250 MHz each. The novel hybrid HBAR nanophotonic platform demonstrated here, allowing on chip integration of micron-scale acoustic and photonic resonators, can find immediate applications in tunable microwave photonics, high bandwidth soliton microcomb stabilization, compact opto-electronic oscillators, and in microwave to optical conversion schemes. Moreover the hybrid platform allows implementation of momentum biasing, which allows realization of on chip non-reciprocal devices such as isolators or circulators and topological photonic bandstructures.
Motivated by the observation of two distinct superconducting phases in the moireless ABC-stacked rhombohedral trilayer graphene, we investigate the electron-acoustic-phonon coupling as a possible pairing mechanism. We predict the existence of superconductivity with the highest $T_csim 3$K near the Van Hove singularity. Away from the Van Hove singularity, $T_c$ remains finite in a wide range of doping. In our model, the $s$-wave spin-singlet and $f$-wave spin-triplet pairings yield the same $T_c$, while other pairing states have negligible $T_c$. Our theory provides a simple explanation for the two distinct superconducting phases in the experiment and suggests that superconductivity and other interaction-driven phases (e.g., ferromagnetism) can have different origins.
Perovskite-based optoelectronic devices have gained significant attention due to their remarkable performance and low processing cost, particularly for solar cells. However, for perovskite light-emitting diodes (LEDs), non-radiative charge carrier recombination has limited electroluminescence (EL) efficiency. Here we demonstrate perovskite-polymer bulk heterostructure LEDs exhibiting record-high external quantum efficiencies (EQEs) exceeding 20%, and an EL half-life of 46 hours under continuous operation. This performance is achieved with an emissive layer comprising quasi-2D and 3D perovskites and an insulating polymer. Transient optical spectroscopy reveals that photogenerated excitations at the quasi-2D perovskite component migrate to lower-energy sites within 1 ps. The dominant component of the photoluminescence (PL) is primarily bimolecular and is characteristic of the 3D regions. From PL quantum efficiency and transient kinetics of the emissive layer with/without charge-transport contacts, we find non-radiative recombination pathways to be effectively eliminated. Light outcoupling from planar LEDs, as used in OLED displays, generally limits EQE to 20-30%, and we model our reported EL efficiency of over 20% in the forward direction to indicate the internal quantum efficiency (IQE) to be close to 100%. Together with the low drive voltages needed to achieve useful photon fluxes (2-3 V for 0.1-1 mA/cm2), these results establish that perovskite-based LEDs have significant potential for light-emission applications.
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