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Register a new userAnisotropy of the transport properties of NdFeAs(O,F) thin films grown on vicinal substrates
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NdFeAs(O,F) thin films having different fluorine contents were grown on 5 deg. or 10 deg. vicinal cut MgO and CaF2 single crystalline substrates by molecular beam epitaxy. Structural characterisations by reflection high-energy electron diffraction and x-ray diffraction confirmed the epitaxial growth of NdFeAs(O,F). The resistivities of the ab-plane and along the c-axis were derived from the resistivity measurements in the longitudinal and transversal directions. The c-axis resistivity was always higher than the ab-plane resistivity, resulting from the anisotropic electronic structure. The resistivity anisotropy at 300 K was almost constant in the range of 50-90 irrespective of the F content. On the other hand, the resistivity anisotropy at 56 K showed a strong fluorine dependence: the resistivity anisotropy was over 200 for the films with optimum F contents (superconducting transition temperature Tc around 50 K), whereas the resistivity anisotropy was around 70 for the films in the under-doped regime (Tc between 35 and 45 K). The mass anisotropy are the effective masses along the c-axis and on the ab-plane) close to Tc derived from the anisotropic Ginzburg-Landau approach using the angular-dependency of the ab-plane resistivity was in the range from 2 to 5. On the assumption that the square of the mass anisotropy is equal to the resistivity anisotropy, those values are small compared to the normal state anisotropy.
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The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are revealing that these Fe-based superconductors are forming a unique class of materials that are interesting from the viewpoint of applications. To exploit the high potential of the Fe-based superconductors for device applications, it is indispensable to establish a process that enables the growth of high quality thin films. Efforts of thin film preparation started soon after the discovery of Fe-based superconductors, but none of the earlier attempts had succeeded in an in-situ growth of a superconducting film of LnFeAs(O,F) (Ln=lanthanide), which exhibits the highest Tc to date among the Fe-based superconductors. Here, we report on the successful growth of NdFeAs(O,F) thin films on GaAs substrates, which showed well-defined superconducting transitions up to 48 K without the need of an ex-situ heat treatment.
The effect of $alpha$-particle irradiation on a NdFeAs(O,F) thin film has been investigated to determine how the introduction of defects affects basic superconducting properties, including the critical temperature $T_c$ and the upper critical field $H_{c2}$, and properties more of interest for applications, like the critical current density $J_c$ and the related pinning landscape. The irradiation-induced suppression of the film $T_c$ is significantly smaller than on a similarly damaged single crystal. Moreover $H_{c2}$ behaves differently, depending on the field orientation: for H//c the $H_{c2}$ slope monotonically increases with increasing disorder, whereas for H//ab it remains constant at low dose and it increases only when the sample is highly disordered. This suggests that a much higher damage level is necessary to drive the NdFeAs(O,F) thin film into the dirty limit. Despite the increase in the low temperature $H_{c2}$, the effects on the $J_c$(H//c) performances are moderate in the measured temperature and field ranges, with a shifting of the pinning force maximum from 4.5 T to 6 T after an irradiation of $2times10^{15} cm^{-2}$. On the contrary, $J_c$(H//ab) is always suppressed. The analysis demonstrates that irradiation does introduce point defects acting as pinning centres proportionally to the irradiation fluence but also suppresses the effectiveness of c-axis correlated pinning present in the pristine sample. We estimate that significant performance improvements may be possible at high field or at temperatures below 10 K. The suppression of the $J_c$(H//ab) performance is not related to a decrease of the $J_c$ anisotropy as found in other superconductors. Instead it is due to the presence of point defects that decrease the efficiency of the ab-plane intrinsic pinning typical of materials with a layered structure.
Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental techniques: X-rays diffraction, reflection high energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The substrate temperature during the deposition was found to be the main parameter governing sample morphology and superconducting critical temperature. Films obtained in the optimal conditions show an epitaxial growth with c axis perpendicular to the film surface and the a and b axis parallel to the substrates one, without the evidence of any other orientation. Moreover, such films show a metallic behavior over the whole measured temperature range and critical temperature above 17K, which is higher than the target one.
Highly oriented polycrystalline SSMO thin films deposited on single crystal substrates by ultrasonic nebulized spray pyrolysis have been studied. The film on LAO is under compressive strain while LSAT and STO are under tensile strain. The presence of a metamagnetic state akin to cluster glass formed due to coexisting FM and antiferromagnetic/charge order (AFM/CO) clusters. All the films show colossal magnetoresistance but its temperature and magnetic field dependence are drastically different. In the lower temperature region the magnetic field dependent isothermal resistivity also shows signature of metamagnetic transitions. The observed results have been explained in terms of the variation of the relative fractions of the coexisting FM and AFM/CO phases as a function of the substrate induced strain and oxygen vacancy induced quenched disorder.
We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2 (001) substrate. High critical current density values larger than 1 MA/cm2 in self field in liquid helium are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through Transmission Electron Microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction
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