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Register a new userHighly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates
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We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2 (001) substrate. High critical current density values larger than 1 MA/cm2 in self field in liquid helium are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through Transmission Electron Microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction
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Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental techniques: X-rays diffraction, reflection high energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The substrate temperature during the deposition was found to be the main parameter governing sample morphology and superconducting critical temperature. Films obtained in the optimal conditions show an epitaxial growth with c axis perpendicular to the film surface and the a and b axis parallel to the substrates one, without the evidence of any other orientation. Moreover, such films show a metallic behavior over the whole measured temperature range and critical temperature above 17K, which is higher than the target one.
We report on the anisotropy of the vortex motion surface impedance of a fst thin film grown on a CaF$_2$ substrate. The dependence on the magnetic field intensity up to 1.2 T and direction, both parallel and perpendicular to the sample $c$-axis, was explored at fixed temperature at two distinct frequencies, $sim16;$GHz and $sim27;$GHz, by means of bitonal dielectric resonator. The free flux flow resistivity $rho_{ff}$ was obtained by exploiting standard models for the high frequency dynamics, whereas the angle dependence was studied in the framework of the well known and widely used Blatter-Geshkenbein-Larkin (BGL) scaling theory for anistropic superconductors. Excellent agreement with the scaling law prescription by the fluxon flux flow resistivity was obtained. From the scaling analysis, a low-field mass anisotropy $sim1.8$ was obtained, well within the value ranges reported in literature. The angular dependence of the pinning constant suggests that pinning is dominated by random, isotropic point pins, consistently with critical current density measurements.
Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition (IBAD)-MgO/Y2O3/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (Tc) of 43 K with a self-field critical current density (Jc) of 7.0 x 104 A/cm2 at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher Tc as well as better crystalline quality than Co-doped BaFe2As2 coated conductors, in-field Jc of NdFeAs(O,F) was lower than that of Co-doped BaFe2As2. These results suggest that grain boundaries in oxypnictides reduce Jc significantly compared to that in Co-doped BaFe2As2 and, hence biaxial texture is necessary for high Jc.
We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc.
The flux flow properties of epitaxial niobium films with different pinning strengths are investigated by dc electrical resistance measurements and mapped to results derived within the framework of a theoretical model. Investigated are the cases of weak random pinning in as-grown films, strong random pinning in Ga ion-irradiated films, and strong periodic pinning induced by a nanogroove array milled by focused ion beam. The generic feature of the current-voltage curves of the films consists in instability jumps to the normal state at some instability current density $j^ast$ as the vortex lattice reaches its critical velocity $v^ast$. While $v^ast(B)$ monotonically decreases for as-grown films, the irradiated films exhibit a non-monotonic dependence $v^ast(B)$ attaining a maximum in the low-field range. In the case of nanopatterned films, this broad maximum is accompanied by a much sharper maximum in both, $v^ast(B)$ and $j^ast(B)$, which we attribute to the commensurability effect when the spacing between the vortex rows coincides with the location of the grooves. We argue that the observed behavior of $v^ast(B)$ can be explained by the pinning effect on the vortex flow instability and support our claims by fitting the experimental data to theoretical expressions derived within a model accounting for the field dependence of the depinning current density.
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