Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userStrain-induced tuning of optical properties of layered Mo$S_2$
68
0
0.0
(
0
)
Authors
Shubham Bhagat
Ask ChatGPT about the research
No Arabic abstract
The sensitive correlation between optical parameters and strain in Mo$S_2$ results in a totally different approach to tune the optical properties. Usually, an external source of strain is employed to monitor the optical and vibrational properties of a material. It is always challenging to have a precise control over the strain and its consequences on material properties. Here, we report the presence of a compressive strain in Mo$S_2$ crystalline powder and nanosheets obtained via the process of ball-milling and probe sonication. The diffraction peaks in the X-ray diffraction pattern shift to higher 2$theta$ value implying a compressive strain that increases with the processing time. The absorption spectra, photoluminescence and Raman modes are blue-shifted w.r.t the bulk unprocessed sample. The observed blue-shift is attributed to the presence of compressive strain in the samples. Whereas in thin nano-sheets of Mo$S_2$, it is very likely that both quantum confinement as well as strain result in the observed blue-shift. These results indicate that by optimizing the processing conditions and/or time, a strain of desired amount and hence tunable shift in optical properties of material can be achieved.
rate research
Read More
We investigate the resonance energy transfer (RET) rate between two quantum emitters near a suspended graphene sheet in vacuum under the influence of an external magnetic field. We perform the analysis for low and room temperatures and show that, due to the extraordinary magneto-optical response of graphene, it allows for an active control and tunability of the RET even in the case of room temperature. We also demonstrate that the RET rate is extremely sensitive to small variations of the applied magnetic field, and can be tuned up to a striking six orders of magnitude for quite realistic values of magnetic field. Moreover, we evidence the fundamental role played by the magnetoplasmon polaritons supported by the graphene monolayer as the dominant channel for the RET within a certain distance range. Our results suggest that magneto-optical media may take the manipulation of energy transfer between quantum emitters to a whole new level, and broaden even more its great spectrum of applications.
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.
We demonstrate reversible strain-tuning of a quantum dot strongly coupled to a photonic crystal cavity. We observe an average redshift of 0.45 nm for quantum dots located inside the cavity membrane, achieved with an electric field of 15 kV/cm applied to a piezo-electric actuator. Using this technique, we demonstrate the ability to tune a quantum dot into resonance with a photonic crystal cavity in the strong coupling regime, resulting in a clear anti-crossing. The bare cavity resonance is less sensitive to strain than the quantum dot and shifts by only 0.078 nm at the maximum applied electric field.
In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1mu m < lambda < 1.3 mu m) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 mu eV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.
Polarization-dependent two-dimensional Fourier-transform spectroscopy (2DFTS) is performed on excitons in strained bulk GaAs layers probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy of heavy-hole (HH) and light-hole (LH) valence states, leading to an observed splitting of the associated excitons at low temperature. Increasing the strain increases the magnitude of the HH/LH exciton peak splitting, induces an asymmetry in the off-diagonal coherences, increases the difference in the HH and LH exciton homogenous linewidths, and increases the inhomogeneous broadening of both exciton species. All results arise from strain-induced variations in the local electronic environment, which is not uniform along the growth direction of the thin layers. For cross-linear polarized excitation, wherein excitonic signals give way to biexcitonic signals, the high-strain sample shows evidence of bound LH, HH, and mixed biexcitons.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
