No Arabic abstract
Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all inter-dot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.
The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we present a square lattice unit cell of 2$times$2 quantum dots defined electrostatically in a AlGaAs/GaAs heterostructure using a double-layer gate technique. We probe the properties of the array using nearby quantum dots operated as charge sensors. We show that we can deterministically and dynamically control the charge occupation in each quantum dot in the single- to few-electron regime. Additionally, we achieve simultaneous individual control of the nearest-neighbor tunnel couplings over a range 0-40~$mu$eV. Finally, we demonstrate fast ($sim 1$~$mu$s) single-shot readout of the spin state of electrons in the dots, through spin-to-charge conversion via Pauli spin blockade. These advances pave the way to analog quantum simulations in two dimensions, not previously accessible in quantum dot systems.
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in a linear array of gate-defined semiconductor quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.
A two-dimensional arrangement of quantum dots with finite inter-dot tunnel coupling provides a promising platform for studying complicated spin correlations as well as for constructing large-scale quantum computers. Here, we fabricate a tunnel-coupled triangular triple quantum dot with a novel gate geometry in which three dots are defined by positively biasing the surface gates. At the same time, the small area in the center of the triangle is depleted by negatively biasing the top gate placed above the surface gates. The size of the small center depleted area is estimated from the Aharonov-Bohm oscillation measured for the triangular channel but incorporating no gate-defined dots, with a value consistent with the design. With this approach, we can bring the neighboring gate-defined dots close enough to one another to maintain a finite inter-dot tunnel coupling. We finally confirm the presence of the inter-dot tunnel couplings in the triple quantum dot from the measurement of tunneling current through the dots in the stability diagram. We also show that the charge occupancy of each dot and that the inter-dot tunnel couplings are tunable with gate voltages.
We report individual confinement and two-axis qubit operations of two electron spin qubits in GaAs gate-defined sextuple quantum dot array with integrated micro-magnet. As a first step toward multiple qubit operations, we demonstrate coherent manipulations of three singlet-triplet qubits showing underdamped Larmor and Ramsey oscillations in all double dot sites. We provide an accurate measure of site site-dependent field gradients and rms electric and magnetic noise, and we discuss the adequacy of simple rectangular micro-magnet for practical use in multiple quantum dot arrays. We also discuss current limitations and possible strategies for realizing simultaneous multi multi-qubit operations in extended linear arrays.
Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electrical operation, efficient spin busing across a quantum circuit, and to enable quantum error correction utilizing the three-spin Greenberger-Horn-Zeilinger quantum state. Towards these goals we demonstrate for the first time coherent manipulation between two interacting three-spin states. We employ the Landau-Zener-Stuckelberg approach for creating and manipulating coherent superpositions of quantum states. We confirm that we are able to maintain coherence when decreasing the exchange coupling of one spin with another while simultaneously increasing its coupling with the third. Such control of pairwise exchange is a requirement of most spin qubit architectures but has not been previously demonstrated.