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Register a new userFull Vectorial Modeling of Second Harmonic Generation in III-V-on-insulator Nanowires
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We model second harmonic generation in subwavelength III-V-on-insulator waveguides. The large index contrast induces strong longitudinal electric field components that play an important role in the nonlinear conversion. We show that many different waveguide dimensions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a higher-order second harmonic mode.
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Second-order nonlinear effects, such as second-harmonic generation, can be strongly enhanced in nanofabricated photonic materials when both fundamental and harmonic frequencies are spatially and temporally confined. Practically designing low-volume and doubly resonant nanoresonators in conventional semiconductor compounds is challenging owing to their intrinsic refractive index dispersion. In this work we review a recently developed strategy to design doubly resonant nanocavities with low mode volume and large quality factor by localized defects in a photonic crystal structure. We build on this approach by applying an evolutionary optimisation algorithm in connection with Maxwell equations solvers, showing that the proposed design recipe can be applied to any material platform. We explicitly calculate the second-harmonic generation efficiency for doubly resonant photonic crystal cavity designs in typical III-V semiconductor materials, such as GaN and AlGaAs, targeting a fundamental harmonic at telecom wavelengths, and fully accounting for the tensor nature of the respective nonlinear susceptibilities. These results may stimulate the realisation of small footprint photonic nanostructures in leading semiconductor material platforms to achieve unprecedented nonlinear efficiencies.
Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W$^{-1}$ for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 $mu$m pump is converted to a 1.0 $mu$m signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 $^{circ}$C with a slope of 0.24 nm/$^{circ}$C. Wafer-bonding between GaAs and SiO$_2$ is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation.
Semiconductor nanowires (NWs) are promising for realizing various on-chip nonlinear optical devices, due to their nanoscale lateral confinement and strong light-matter interaction. However, high-intensity pulsed pump lasers are typically needed to exploit their optical nonlinearity because light couples poorly with nanometric-size wires. Here, we demonstrate microwatts continuous-wave light pumped second harmonic generation (SHG) in AlGaAs NWs by integrating them with silicon planar photonic crystal cavities. Light-NW coupling is enhanced effectively by the extremely localized cavity mode at the subwavelength scale. Strong SHG is obtained even with a continuous-wave laser excitation with a pump power down to ~3 uW, and the cavity-enhancement factor is estimated around 150. Additionally, in the integrated device, the NWs SHG is more than two-order of magnitude stronger than third harmonic generations in the silicon slab, though the NW only couple s with less than 1% of the cavity mode. This significantly reduced power-requirement of NWs nonlinear frequency conversion would promote NW-based building blocks for nonlinear optics, specially in chip-integrated coherent light sources, entangled photon-pairs and signal processing devices.
We report on the systematical study of the second-harmonic generation (SHG) in single zinc sulfide nanowires (ZnS NWs). The high quality ZnS NWs with round cross-section were fabricated by chemical vapor deposition method. The transmission electron microscopy images show that the actual growth-axis has a deviation angle of 0o~20o with the preferential growth direction [120], which leads to the various polarization-dependent SHG response patterns in different individual ZnS NWs. The SHG response is quite sensitive to the orientations of c-axis as well as the (100) and (010) crystal-axis of ZnS NWs, thus all the three crystal-axis orientations of ZnS NWs are precisely determined by the SHG method. A high SHG conversion efficiency of 7*10^(-6) is obtained in single ZnS NWs, which shows potential applications in nanoscale ultraviolet light source, nonlinear optical microscopy and nanophotonic devices.
A scheme for active second harmonics generation is suggested. The system comprises $N$ three-level atoms in ladder configuration, situated into resonant cavity. It is found that the system can lase in either superradiant or subradiant regime, depending on the number of atoms $N$. When N passes some critical value the transition from the super to subradiance occurs in a phase-transition-like manner. Stability study of the steady state supports this conclusion.
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