No Arabic abstract
The family of atomically thin magnets holds great promise for a number of prospective applications in magneto-optoelectronics, with CrI$_3$ arguably being its most prototypical member. However, the formation of defects in this system remains unexplored to date. Here, we investigate native point defects in monolayer CrI$_3$ by means of first-principles calculations. We consider a large set of intrinsic impurities and address their atomic structure, thermodynamic stability, diffusion and aggregation tendencies as well as local magnetic moments. Under thermodynamic equilibrium, the most stable defects are found to be either Cr or I atomic vacancies along with their complexes, depending on the chemical potential conditions. These defects are predicted to be quite mobile at room temperature and to exhibit a strong tendency to agglomerate. In addition, our calculations indicate that the defect-induced deviation from the nominal stoichiometry largely impacts the local magnetic moments, thereby suggesting a marked interplay between magnetism and disorder in CrI$_3$. Overall, this work portrays a comprehensive picture of intrinsic point defects in monolayer CrI$_3$ from a theoretical perspective.
We find unusually large cross-polarized (and anti-symmetric) Raman signature of A$_{rm g}$ phonon mode in CrI$_3$, in agreement with experiments. The signal is present only when the following three effects are considered in concert: ferromagnetism on Cr atoms, spin-orbit interaction, and resonant effects. Somewhat surprisingly, we find that the relevant spin-orbit interaction potential originates from iodine atoms, despite magnetism being mostly on chromium atoms. We analyze the Raman signature as a function of magnetic order, the direction of the magnetic moment, energy and polarization of light used for Raman scattering, as well as carrier lifetime. In addition to a strong cross-polarized Raman signal, we also find unusually strong phonon modulated magneto-optical Kerr effect (MOKE) in CrI$_3$.
Identification and design of defects in two-dimensional (2D) materials as promising single photon emitters (SPE) requires a deep understanding of underlying carrier recombination mechanisms. Yet, the dominant mechanism of carrier recombination at defects in 2D materials has not been well understood, and some outstanding questions remain: How do recombination processes at defects differ between 2D and 3D systems? What factors determine defects in 2D materials as excellent SPE at room temperature? In order to address these questions, we developed first-principles methods to accurately calculate the radiative and non-radiative recombination rates at defects in 2D materials, using h-BN as a prototypical example. We reveal the carrier recombination mechanism at defects in 2D materials being mostly dominated by defect-defect state recombination in contrast to defect-bulk state recombination in most 3D semiconductors. In particular, we disentangle the non-radiative recombination mechanism into key physical quantities: zero-phonon line (ZPL) and Huang-Rhys factor. At the end, we identified strain can effectively tune the electron-phonon coupling at defect centers and drastically change non-radiative recombination rates. Our theoretical development serves as a general platform for understanding carrier recombination at defects in 2D materials, while providing pathways for engineering of quantum efficiency of SPE.
The discovery of graphene makes it highly desirable to seek new two-dimensional materials. Through first-principles investigation, we predict two-dimensional materials of ReN$_{2}$: honeycomb and tetragonal structures. The phonon spectra establish the dynamical stability for both of the two structures, and the calculated in-plane stiffness constants proves their mechanical stability. The energy bands near the Fermi level consist of N-p and Re-d orbitals for the honeycomb structure, and are mainly from Re d orbitals for the tetragonal structure. While the tetragonal structure is non-magnetic, the honeycomb structure has N-based ferromagnetism, which will transit to anti-ferromagnetism under 14$%$ biaxial strain. The calculated electron localization function and spin density indicate that direct N-N bond can occur only in the honeycomb structure. The ferromagnetism allows us to distinguish the two 2D phases easily. The tetragonal phase has lower energy than the honeycomb one, which means that the tetragonal phase is more stable, but the hexagonal phase has much larger bulk, shear, and Youngs muduli than the tetragonal phase. The tetragonal phase is a three-bands metal, and the hexagonal phase is a ferromagnetic semi-metal. The special structural, electronic, magnetic, and optical properties in the honeycomb and tetragonal structures make them promising for novel applications.
Charged defects in 2D materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. Advancement of these technologies requires rational design of ideal defect centers, demanding reliable computation methods for quantitatively accurate prediction of defect properties. We present an accurate, parameter-free and efficient procedure to evaluate quasiparticle defect states and thermodynamic charge transition levels of defects in 2D materials. Importantly, we solve critical issues that stem from the strongly anisotropic screening in 2D materials, that have so far precluded accurate prediction of charge transition levels in these materials. Using this procedure, we investigate various defects in monolayer hexagonal boron nitride (h-BN) for their charge transition levels, stable spin states and optical excitations. We identify $C_BN_V$ (nitrogen vacancy adjacent to carbon substitution of boron) to be the most promising defect candidate for scalable quantum bit and emitter applications.
Microscopic origin of the ferromagnetic (FM) exchange coupling in CrCl$_3$ and CrI$_3$, their common aspects and differences, are investigated on the basis of density functional theory combined with realistic modeling approach for the analysis of interatomic exchange interactions. We perform a comparative study based on the pseudopotential and linear muffin-tin orbital methods by treating the effects of electron exchange and correlation in GGA and LSDA, respectively. The results of ordinary band structure calculations are used in order to construct the minimal tight-binding type models describing the behavior of the magnetic Cr $3d$ and ligand $p$ bands in the basis of localized Wannier functions, and evaluate the effective exchange coupling ($J_{rm eff}$) between two Cr sublattices employing four different technique: (i) Second-order Greens function perturbation theory for infinitesimal spin rotations of the LSDA (GGA) potential at the Cr sites; (ii) Enforcement of the magnetic force theorem in order to treat both Cr and ligand spins on a localized footing; (iii) Constrained total-energy calculations with an external field, treated in the framework of self-consistent linear response theory. We argue that the ligand states play crucial role in the ferromagnetism of Cr trihalides, though their contribution to $J_{rm eff}$ strongly depends on additional assumptions, which are traced back to fundamentals of adiabatic spin dynamics. Particularly, by neglecting ligand spins in the Greens function method, $J_{rm eff}$ can easily become antiferromagnetic, while by treating them as localized, one can severely overestimate the FM coupling. The best considered approach is based on the constraint method, where the ligand states are allowed to relax in response to each instantaneous reorientation of the Cr spins, controlled by the external field.