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Register a new userComplete Strain Mapping of Nanosheets of Tantalum Disulfide
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Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization methods. Here we show that using fly-scan nano X-ray diffraction we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 $mu$m on quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a $sim$ 100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron and sub-micron sized bubbles that are present in the sample may be reconstructed from these images. The experiments use state of the art synchrotron instrumentation, and will allow rapid and non-intrusive strain mapping of thin film samples and electronic devices based on quasi 2D materials.
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Nano-thick metallic transition metal dichalcogenides such as VS$_{2}$ are essential building blocks for constructing next-generation electronic and energy-storage applications, as well as for exploring unique physical issues associated with the dimensionality effect. However, such 2D layered materials have yet to be achieved through either mechanical exfoliation or bottom-up synthesis. Herein, we report a facile chemical vapor deposition route for direct production of crystalline VS$_{2}$ nanosheets with sub-10 nm thicknesses and domain sizes of tens of micrometers. The obtained nanosheets feature spontaneous superlattice periodicities and excellent electrical conductivities (~3$times$10$^{3}$ S cm$^{-1}$), which has enabled a variety of applications such as contact electrodes for monolayer MoS$_{2}$ with contact resistances of ~1/4 to that of Ni/Au metals, and as supercapacitor electrodes in aqueous electrolytes showing specific capacitances as high as 8.6$times$10$^{2}$ F g$^{-1}$. This work provides fresh insights into the delicate structure-property relationship and the broad application prospects of such metallic 2D materials.
The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.
The coexistence of charge density wave (CDW) and superconductivity in tantalum disulfide (2H-TaS$_2$) at ambient pressure, is boosted by applying hydrostatic pressures up to 30GPa, thereby inducing a typical dome-shaped superconducting phase. The ambient pressure CDW ground state which begins at TCDW = 76 K, with critically small Fermi surfaces, was found to be fully suppressed at Pc = 8.7GPa. Around Pc, we observe a superconducting dome with a maximum superconducting transition temperature Tc = 9.1 K. First-principles calculations of the electronic structure predict that, under ambient conditions, the undistorted structure is characterized by a phonon instability at finite momentum close to the experimental CDW wave vector. Upon compression, this instability is found to disappear, indicating the suppression of CDW order. The calculations reveal an electronic topological transition (ETT), which occurs before the suppression of the phonon instability, suggesting that the ETT alone is not directly causing the structural change in the system. The temperature dependence of the first vortex penetration field has been experimentally obtained by two independent methods and the corresponding lower critical field H$_{c1}$ was deduced. While a d wave and single-gap BCS prediction cannot describe our H$_{c1}$ experiments, the temperature dependence of the H$_{c1}$ can be well described by a single-gap anisotropic s-wave order parameter.
We report a technique for transferring large areas of the CVD-grown, few-layer MoS2 from the original substrate to another arbitrary substrate and onto holey substrates, in order to obtain free-standing structures. The method consists of a polymer- and residue-free, surface-tension-assisted wet transfer, in which we take advantage of the hydrophobic properties of the MoS2. The methods yields better quality transferred layers, with fewer cracks and defects, and less contamination than the widely used PMMA-mediated transfer and allows fabrication of few-layer, fee-standing structures with diameters up to 100 micro-m. We report thermal conductivity measurements by means of contactless Raman thermometry on the so-fabricated samples. The measurements revealed a strong reduction in the in-plane thermal conductivity down to 0.5 W/mK. The results are explained using finite elements method simulations for a polycrystalline film.
The volume of tantalum versus pressure has been accurately measured up to 101 GPa by single-crystal x-ray diffraction, with helium as pressure transmitting medium. Slight deviation from previous static determinations is observed. Discrepancy with reduced shock-wave and ultrasonic data supports recent doubts about the calibration of the ruby pressure scale. Finally, first principle calculations of the literature show a positive curvature in $P(V)$ relative to the experimental data, even with a modified pressure scale.
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