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Register a new userSmall bandgap features achieved in atomically precise 17-atom-wide armchair-edged graphene nanoribbons
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Added by
Junichi Yamaguchi Ph.D.
Publication date
2019
fields
Physics
and research's language is
English
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Graphene nanoribbons (GNRs) synthesized using a bottom-up technique potentially enable future electronic devices owing to the tunable electronic structures depending on the well-defined width and edge geometry. For instance, armchair-edged GNRs (AGNRs) exhibit width-dependent bandgaps. However, the bandgaps of AGNRs synthesized experimentally thus far are relatively large, well above 1 eV. Such a large bandgap may deteriorate device performances due to large Schottky barriers and carrier effective masses. We describe the bottom-up synthesis of AGNRs with a smaller bandgap using dibromobenzene-based precursors. Two types of AGNRs with different widths of 17 and 13 carbon atoms were synthesized on Au(111), and their atomic and electronic structures were investigated by scanning probe microscopy and spectroscopy. We reveal that the 17-AGNRs has the smallest bandgap as well as the smallest electron/hole effective mass among bottom-up AGNRs reported thus far. The successful synthesis of 17-AGNRs is a significant step toward the development of GNR-based electronic devices.
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Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs, and differentiates them from other sp2 carbon nanostructures.
Electronic states at the ends of a narrow armchair nanoribbon give rise to a pair of non-locally entangled spins. We propose two experiments to probe these magnetic states, based on magnetometry and tunneling spectroscopy, in which correlation effects lead to a striking, nonlinear response to external magnetic fields. On the basis of low-energy theories that we derive here, it is remarkably simple to assess these nonlinear signatures for magnetic edge states. The effective theories are especially suitable in parameter regimes where other methods such as quantum Monte-Carlo simulations are exceedingly difficult due to exponentially small energy scales. The armchair ribbon setup discussed here provides a promisingly well-controlled (both experimentally and theoretically) environment for studying the principles behind edge magnetism in graphene-based nano-structures.
By analytically constructing the matrix elements of an electron-phonon interaction for the $D$ band in the Raman spectra of armchair graphene nanoribbons, we show that pseudospin and momentum conservation result in (i) a $D$ band consisting of two components, (ii) a $D$ band Raman intensity that is enhanced only when the polarizations of the incident and scattered light are parallel to the armchair edge, and (iii) the $D$ band softening/hardening behavior caused by the Kohn anomaly effect is correlated with that of the $G$ band. Several experiments are mentioned that are relevant to these results. It is also suggested that pseudospin is independent of the boundary condition for the phonon mode, while momentum conservation depends on it.
Strain fold-like deformations on armchair graphene nanoribbons (AGNRs) can be properly engineered in experimental setups, and could lead to a new controlling tool for gaps and transport properties. Here, we analyze the electronic properties of folded AGNRs relating the electronic responses and the mechanical deformation. An important and universal parameter for the gap engineering is the ribbon percent width variation, i.e., the difference between the deformed and undeformed ribbon widths. AGNRs bandgap can be tuned mechanically in a well defined bounded range of energy values, eventually leading to a metallic system. This characteristic provides a new controllable degree of freedom that allows manipulation of electronic currents. We show that the numerical results are analytically predicted by solving the Dirac equation for the strained system.
In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with unprecedented conductivity. We show formation of reliable Ohmic contacts and a yield of functional FETs close to unity by lamination of GNRs on the electrodes. Modeling the charge carrier transport in the networks reveals that this process is governed by inter-ribbon hopping mediated by nuclear tunneling, with a hopping length comparable to the physical length of the GNRs. Furthermore, we demonstrate that nuclear tunneling is a general charge transport characteristic of the GNR networks by using two different GNRs. Overcoming the challenge of low-yield single-ribbon transistors by the networks and identifying the corresponding charge transport mechanism puts GNR-based electronics in a new perspective.
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