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Register a new userCorrelated states in magic angle twisted bilayer graphene under the optical conductivity scrutiny
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Moire systems displaying flat bands have emerged as novel platforms to study correlated electron phenomena. Insulating and superconducting states appear upon doping magic angle twisted bilayer graphene (TBG), and there is evidence of correlation induced effects at the charge neutrality point (CNP) which could originate from spontaneous symmetry breaking. Our theoretical calculations show how optical conductivity measurements can distinguish different symmetry breaking states, and reveal the nature of the correlated states. In the specific case of nematic order, which breaks the discrete rotational symmetry of the lattice, we find that the Dirac cones are displaced, not only in momentum space but also in energy, inducing finite Drude weight at the CNP. We also show that the sign of the dc conductivity anisotropy induced by a nematic order depends on the degree of lattice relaxation, the doping and the nature of the symmetry breaking.
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Magic-angle twisted bilayer graphene (MATBG) exhibits a range of correlated phenomena that originate from strong electron-electron interactions. These interactions make the Fermi surface highly susceptible to reconstruction when $ pm 1, pm 2, pm 3$ electrons occupy each moir e unit cell and lead to the formation of correlated insulating, superconducting and ferromagnetic phases. While some phases have been shown to carry a non-zero Chern number, the local microscopic properties and topological character of many other phases remain elusive. Here we introduce a set of novel techniques hinging on scanning tunneling microscopy (STM) to map out topological phases in MATBG that emerge in finite magnetic field. By following the evolution of the local density of states (LDOS) at the Fermi level with electrostatic doping and magnetic field, we visualize a local Landau fan diagram that enables us to directly assign Chern numbers to all observed phases. We uncover the existence of six topological phases emanating from integer fillings in finite fields and whose origin relates to a cascade of symmetry-breaking transitions driven by correlations. The spatially resolved and electron-density-tuned LDOS maps further reveal that these topological phases can form only in a small range of twist angles around the magic-angle value. Both the microscopic origin and extreme sensitivity to twist angle differentiate these topological phases from the Landau levels observed near charge neutrality. Moreover, we observe that even the charge-neutrality Landau spectrum taken at low fields is considerably modified by interactions and exhibits an unexpected splitting between zero Landau levels that can be as large as ${sim },3-5$ meV. Our results show how strong electronic interactions affect the band structure of MATBG and lead to the formation of correlation-enabled topological phases.
We present a framework for understanding the recently observed cascade transitions and the Landau level degeneracies at every integer filling of twisted bilayer graphene. The Coulomb interaction projected onto narrow bands causes the charged excitations at an integer filling to disperse, forming new bands. If the excitation moves the filling away from the charge neutrality point, then it has a band minimum at the moire Brillouin zone center with a small mass that compares well with the experiment; if towards the charge neutrality point, then it has a much larger mass and a higher degeneracy. At a non-zero density away from an integer filling the excitations interact. The system on the small mass side has a large bandwidth and forms a Fermi liquid. On the large mass side the bandwidth is narrow, the compressibility is negative and the Fermi liquid is likely unstable. This explains the observed sawtooth features in compressibility, the Landau fans pointing away from charge neutrality as well as their degeneracies. By providing a description of the charge itineracy in the normal state this framework sets the stage for superconductivity at lower temperatures.
We present a systematic study of the low-energy collective modes for different insulating states at integer fillings in twisted bilayer graphene. In particular, we provide a simple counting rule for the total number of soft modes, and analyze their energies and symmetry quantum numbers in detail. To study the soft mode spectra, we employ time dependent Hartree-Fock whose results are reproduced analytically via an effective sigma model description. We find two different types of low-energy modes - (i) approximate Goldstone modes associated with breaking an enlarged U(4)$times$U(4) symmetry and, surprisingly, a set of (ii) nematic modes with non-zero angular momentum under three-fold rotation. The modes of type (i) include true gapless Goldstone modes associated with exact symmetries in addition to gapped pseudo-Goldstone modes associated with approximate symmetries. While the modes of type (ii) are always gapped, we show that their gap decreases as the Berry curvature grows more concentrated. For realistic parameter values, the gapped soft modes of both types have comparable gaps of only a few meV, and lie completely inside the mean-field bandgap. The entire set of soft modes emerge as Goldstone modes of a different idealized model in which Berry flux is limited to a solenoid, which enjoys an enlarged U(8) symmetry. Furthermore, we discuss the number of Goldstone modes for each symmetry-broken state, distinguishing the linearly vs quadratically dispersing modes. Finally, we present a general symmetry analysis of the soft modes for all possible insulating Slater determinant states at integer fillings that preserve translation symmetry, independent of the energetic details. The resulting soft mode degeneracies and symmetry quantum numbers provide a fingerprint of the different insulting states enabling their experimental identification from a measurement of their soft modes.
Superconductivity often occurs close to broken-symmetry parent states and is especially common in doped magnetic insulators. When twisted close to a magic relative orientation angle near 1 degree, bilayer graphene has flat moire superlattice minibands that have emerged as a rich and highly tunable source of strong correlation physics, notably the appearance of superconductivity close to interaction-induced insulating states. Here we report on the fabrication of bilayer graphene devices with exceptionally uniform twist angles. We show that the reduction in twist angle disorder reveals insulating states at all integer occupancies of the four-fold spin/valley degenerate flat conduction and valence bands, i.e. at moire band filling factors nu = 0, +(-) 1, +(-) 2, +(-) 3, and superconductivity below critical temperatures as high as 3 K close to - 2 filling. We also observe three new superconducting domes at much lower temperatures close to the nu = 0 and nu = +(-) 1 insulating states. Interestingly, at nu = +(-) 1 we find states with non-zero Chern numbers. For nu = - 1 the insulating state exhibits a sharp hysteretic resistance enhancement when a perpendicular magnetic field above 3.6 tesla is applied, consistent with a field driven phase transition. Our study shows that symmetry-broken states, interaction driven insulators, and superconducting domes are common across the entire moire flat bands, including near charge neutrality.
We introduce and analyze a model that sheds light on the interplay between correlated insulating states, superconductivity, and flavor-symmetry breaking in magic angle twisted bilayer graphene. Using a variational mean-field theory, we determine the normal-state phase diagram of our model as a function of the band filling. The model features robust insulators at even integer fillings, occasional weaker insulators at odd integer fillings, and a pattern of flavor-symmetry breaking at non-integer fillings. Adding a phonon-mediated inter-valley retarded attractive interaction, we obtain strong-coupling superconducting domes, whose structure is in qualitative agreement with experiments. Our model elucidates how the intricate form of the interactions and the particle-hole asymmetry of the electronic structure determine the phase diagram. It also explains how subtle differences between devices may lead to the different behaviors observed experimentally. A similar model can be applied with minor modifications to other moir{e} systems, such as twisted trilayer graphene.
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