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Register a new userReducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates
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We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface, and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.
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We characterize low-loss electron-beam evaporated niobium thin films deposited under ultra-high vacuum conditions. Slow deposition yields films with a high superconducting transition temperature ($9.20 pm 0.06 rm ~K$) as well as a residual resistivity ratio of $4.8$. We fabricate the films into coplanar waveguide resonators to extract the intrinsic loss due to the presence of two-level-system fluctuators using microwave measurements. For a coplanar waveguide resonator gap of $2~mu rm m$, the films exhibit filling-factor-adjusted two-level-system loss tangents as low as $1.5 times 10^{-7}$ with single-photon regime internal quality factors in excess of one million after removing native surface oxides of the niobium.
We numerically and experimentally investigate the phononic loss for superconducting resonators fabricated on a piezoelectric substrate. With the help of finite element method simulations, we calculate the energy loss due to electromechanical conversion into bulk and surface acoustic waves. This sets an upper limit for the resonator internal quality factor $Q_i$. To validate the simulation, we fabricate quarter wavelength coplanar waveguide resonators on GaAs and measure $Q_i$ as function of frequency, power and temperature. We observe a linear increase of $Q_i$ with frequency, as predicted by the simulations for a constant electromechanical coupling. Additionally, $Q_i$ shows a weak power dependence and a negligible temperature dependence around 10$,$mK, excluding two level systems and non-equilibrium quasiparticles as the main source of losses at that temperature.
Quantum bits (qubits) with long coherence times are an important element for the implementation of medium- and large-scale quantum computers. In the case of superconducting planar qubits, understanding and improving qubits quality can be achieved by studying superconducting planar resonators. In this Paper, we fabricate and characterize coplanar waveguide resonators made from aluminum thin films deposited on silicon substrates. We perform three different substrate treatments prior to aluminum deposition: One chemical treatment based on a hydrofluoric acid clean, one physical treatment consisting of a thermal annealing at 880 degree Celsius in high vacuum, one combined treatment comprising both the chemical and the physical treatments. We first characterize the fabricated samples through cross-sectional tunneling electron microscopy acquiring electron energy loss spectroscopy maps of the samples cross sections. These measurements show that both the chemical and the physical treatments almost entirely remove native silicon oxide from the substrate surface and that their combination results in the cleanest interface. We then study the quality of the resonators by means of microwave measurements in the quantum regime, i.e., at a temperature T~10 mK and at a mean microwave photon number $langle n_{textrm{ph}} rangle sim 1$. In this regime, we find that both surface treatments independently improve the resonators intrinsic quality factor and that the highest quality factor is obtained for the combined treatment, $Q_{textrm{i}} sim 0.8$ million. Finally, we find that the TLS quality factor averaged over a time period of 3 h is $sim 3$ million at $langle n_{textrm{ph}} rangle sim 10$, indicating that substrate surface engineering can potentially reduce the TLS loss below other losses such as quasiparticle and vortex loss.
We report on the design, fabrication and characterization of superconducting coplanar waveguide resonators with nanoscopic constrictions. By reducing the size of the center line down to 50 nm, the radio frequency currents are concentrated and the magnetic field in its vicinity is increased. The device characteristics are only slightly modified by the constrictions, with changes in resonance frequency lower than 1% and internal quality factors of the same order of magnitude as the original ones. These devices could enable the achievement of higher couplings to small magnetic samples or even to single molecular spins and have applications in circuit quantum electrodynamics, quantum computing and electron paramagnetic resonance.
The loss of amorphous hydrogenated silicon nitride (a-SiN$_{x}$:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system (TLS) defect model. Each a-SiN$_{x}$:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent $tandelta_{0}$ in a-SiN$_{x}$:H is strongly correlated with N-H impurities, including NH$_{2}$. By slightly reducing $x$ we are able to reduce $tandelta_0$ by approximately a factor of 50, where the best films show $tandelta_0$ $simeq$ 3 $times$ 10$^{-5}$.
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