Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userElectric field induced nucleation: An alternative pathway to metallic hydrogen
107
0
0.0
(
0
)
Added by
Marco Nardone Ph.D.
Publication date
2011
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Electric field induced nucleation is introduced as a possible mechanism to realize a metallic phase of hydrogen. Analytical expressions are derived for the nucleation probabilities of both thermal and quantum nucleation in terms of material parameters, temperature, and the applied field. Our results show that the insulator-metal transition can be driven by an electric field within a reasonable temperature range and at much lower pressures than the current paradigm of P > 400 GPa. Both static and oscillating fields are considered and practical implementations are discussed.
rate research
Read More
The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material : controlling DW nucleation and stopping DW propagation at the edge of the electrode.
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in {alpha}-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.
Knowledge of the behavior of hydrogen in metal hydrides is the key for understanding their electronic properties. So far, no experimental methods exist to access these properties beyond 100 GPa, where high-Tc superconductivity emerges. Here, we present an 1H-NMR study of cubic FeH up to 200GPa. We observe a distinct deviation from the ideal metallic behavior between 64 and 110 GPa that suggests pressure-induced H-H interactions. Accompanying ab-initio calculations support this interpretation, as they reveal the formation of an intercalating sublattice of electron density, which enhances the hydrogen contribution to the electronic density of states at the Fermi level. This study shows that pressure induced H-H interactions can occur in metal hydrides at much lower compression and larger H-H distances than previously thought and stimulates an alternative pathway in the search for novel high-temperature superconductors.
A detailed simple model is applied to study a metallic cluster. It is assumed that the ions and delocalized electrons are distributed randomly throughout the cluster. The delocalized electrons are assumed to be degenerate. A spherical ball models the shape of a cluster. The energy of the microscopic electrostatic field around the ions is taken into account and calculated. It is shown in the framework of the model that the cluster is stable. Equilibrium radius of a ball and the energy of the equilibrium cluster are calculated. Bulk modulus of a cluster is calculated also.
Using density functional theory we show that an applied electric field substantially improves the hydrogen storage properties of a BN sheet by polarizing the hydrogen molecules as well as the substrate. The adsorption energy of a single H2 molecule in the presence of an electric field of 0.05 a.u. is 0.48 eV compared to 0.07 eV in its absence. When one layer of H2 molecules is adsorbed, the binding energy per H2 molecule increases from 0.03 eV in the field-free case to 0.14 eV/H2 in the presence of an electric field of 0.045 a.u. The corresponding gravimetric density of 7.5 wt % is consistent with the 6 wt % system target set by DOE for 2010. Once the applied electric field is removed, the stored H2 molecules can be easily released, thus making the storage reversible.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
