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Register a new userGalvanic Replacement Reaction to prepare nanoporous Aluminum for UV plasmonics
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Plasmonics applications have been extending into the ultraviolet region of the electromagnetic spectrum. Unfortunately the commonly used noble metals have intrinsic optical properties that limit their use above 350 nm. Aluminum is probably the most suitable material for UV plasmonics and in this work we show that nanoporous aluminum can be prepared starting from an alloy of Mg3Al2. The porous metal is obtained by means of a galvanic replacement reaction. Such a nanoporous metal can be exploited to achieve a plasmonic material for enhanced UV Raman spectroscopy and fluorescence. Thanks to the large surface to volume ratio this material represents a powerful platform for promoting interaction between plasmonic substrates and molecules in the UV.
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Ultraviolet (UV) plasmonics aims at combining the strong absorption bands of molecules in the UV range with the intense electromagnetic fields of plasmonic nanostructures to promote surface-enhanced spectroscopy and catalysis. Currently, aluminum is the most widely used metal for UV plasmonics, and is generally assumed to be remarkably stable thanks to its natural alumina layer passivating the metal surface. However, we find here that under 266 nm UV illumination, aluminum can undergo a dramatic photocorrosion in water within a few tens of seconds and even at low average UV powers. This aluminum instability in water environments critically limits the UV plasmonics applications. We show that the aluminum photocorrosion is related to the nonlinear absorption by water in the UV range leading to the production of hydroxyl radicals. Different corrosion protection approaches are tested using scavengers for reactive oxygen species and polymer layers deposited on top of the aluminum structures. Using optimized protection, we achieve a ten-fold increase in the available UV power range leading to no visible photocorrosion effects. This technique is crucial to achieve stable use of aluminum nanostructures for UV plasmonics in aqueous solutions.
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMOS) process integration. These difficulties led to the development of trapped-charge based memory devices (also called floating gate or flash memory), and these are now the mainstream non-volatile memory (NVM) technology. Over the past two decades, advances in oxide FE materials have rejuvenated the field of ferroelectrics and made FE random access memories (FE-RAM) a commercial reality. Despite these advances, commercial FE-RAM based on lead zirconium titanate (PZT) has stalled at the 130 nm due to process challenges.The recent discovery of scandium doped aluminum nitride (AlScN) as a CMOS compatible ferroelectric presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approx. 350 C). This temperature is compatible with CMOS back end of line processes. Here, we present a FE-FET device composed of an AlScN FE dielectric layer integrated with a channel layer of a van der Waals two-dimensional (2D) semiconductor, MoS2. Our devices show an ON/OFF ratio ~ 10^6, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable, two-state memory retention for up to 10^4 seconds. Our simulations and experimental results suggest that the combination of AlScN and 2D semiconductors is nearly ideal for low power FE-FET memory. These results demonstrate a new approach in embedded memory and in-memory computing, and could even lead to effective neuromorphic computing architectures.
Unlike conventional optics, plasmonics enables unrivalled concentration of optical energy well beyond the diffraction limit of light. However, a significant part of this energy is dissipated as heat. Plasmonic losses present a major hurdle in the development of plasmonic devices and circuits that can compete with other mature technologies. Until recently, they have largely kept the use of plasmonics to a few niche areas where loss is not a key factor, such as surface enhanced Raman scattering and biochemical sensing. Here, we discuss the origin of plasmonic losses and various approaches to either minimize or mitigate them based on understanding of fundamental processes underlying surface plasmon modes excitation and decay. Along with the ongoing effort to find and synthesize better plasmonic materials, optical designs that modify the optical powerflow through plasmonic nanostructures can help in reducing both radiative damping and dissipative losses of surface plasmons. Another strategy relies on the development of hybrid photonic-plasmonic devices by coupling plasmonic nanostructures to resonant optical elements. Hybrid integration not only helps to reduce dissipative losses and radiative damping of surface plasmons, but also makes possible passive radiative cooling of nano-devices. Finally, we review emerging applications of thermoplasmonics that leverage Ohmic losses to achieve new enhanced functionalities. The most successful commercialized example of a loss-enabled novel application of plasmonics is heat-assisted magnetic recording. Other promising technological directions include thermal emission manipulation, cancer therapy, nanofabrication, nano-manipulation, plasmon-enabled material spectroscopy and thermo-catalysis, and solar water treatment.
Quantum bits (qubits) with long coherence times are an important element for the implementation of medium- and large-scale quantum computers. In the case of superconducting planar qubits, understanding and improving qubits quality can be achieved by studying superconducting planar resonators. In this Paper, we fabricate and characterize coplanar waveguide resonators made from aluminum thin films deposited on silicon substrates. We perform three different substrate treatments prior to aluminum deposition: One chemical treatment based on a hydrofluoric acid clean, one physical treatment consisting of a thermal annealing at 880 degree Celsius in high vacuum, one combined treatment comprising both the chemical and the physical treatments. We first characterize the fabricated samples through cross-sectional tunneling electron microscopy acquiring electron energy loss spectroscopy maps of the samples cross sections. These measurements show that both the chemical and the physical treatments almost entirely remove native silicon oxide from the substrate surface and that their combination results in the cleanest interface. We then study the quality of the resonators by means of microwave measurements in the quantum regime, i.e., at a temperature T~10 mK and at a mean microwave photon number $langle n_{textrm{ph}} rangle sim 1$. In this regime, we find that both surface treatments independently improve the resonators intrinsic quality factor and that the highest quality factor is obtained for the combined treatment, $Q_{textrm{i}} sim 0.8$ million. Finally, we find that the TLS quality factor averaged over a time period of 3 h is $sim 3$ million at $langle n_{textrm{ph}} rangle sim 10$, indicating that substrate surface engineering can potentially reduce the TLS loss below other losses such as quasiparticle and vortex loss.
We used oxygen ion irradiation to transfer the nanoscale pattern of a porous alumina mask into high- superconducting thin films. This causes a nanoscale spatial modulation of superconductivity and strongly affects the magneto-transport below, which shows a series of periodic oscillations reminiscent of the Little-Parks effect in superconducting wire networks. This irradiation technique could be extended to other oxide materials in order to induce ordered nanoscale phase segregation.
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