No Arabic abstract
Simulations and experimental works have been carried out in a complementary way to engineer a basic material target mimicking the same dielectric properties of the human body. It includes a resistor in parallel with a capacitor, whose values (Rh=1500 {Omega} and Ch=100 pF) are estimated in regard of parameters commonly utilized upon in vivo campaigns (frequency=30 kHz, gap=10 mm, high voltage electrode surface=12.6 mm2). This equivalent electrical human body (EEHB) circuit can be used as a reference and realistic target to calibrate electrical properties of therapeutic plasma sources before their utilization on patients. In this letter, we consider a configuration where this EEHB target interacts with a plasma gun (PG). Plasma power measurements performed in such configuration clearly indicate two operating modes depending on the value of the supplied voltage. Hence, the plasma gun generates pulsed atmospheric plasma streams likely to present therapeutic interest for voltages comprised between 3.0 and 8.5 kV while for higher values, transient arcs of thermal plasma are generated and represent substantial risks for the patient.
Seeds have been packed in a dielectric barrier device where cold atmospheric plasma has been generated to improve their germinative properties. A special attention has been paid on understanding the resulting plasma electrical properties through an equivalent electrical model whose experimental validity has been demonstrated here. In this model, the interelectrode gap is subdivided into 4 types of elementary domains, according to whether they contain electric charges (or not) and according to their type of medium (gas, seed or insulator). The model enables to study the influence of seeds on the plasma electrical properties by measuring and deducing several parameters (charge per filament, gas capacitance, plasma power, ...) either in no-bed configuration (i.e. no seed in the reactor) or in packed-bed configuration (seeds in the reactor). In that second case, we have investigated how seeds can influence the plasma electrical parameters considering six specimens of seeds (beans, radishes, corianders, lentils, sunflowers and corns). The influence of molecular oxygen (0-100 sccm) mixed with a continuous flow rate of helium (2 slm) is also investigated, especially through filaments breakdown voltages, charge per filament and plasma power. It is demonstrated that such bed-packing drives to an increase in the gas capacitance, to a decrease in the beta-parameter and to variations of the filaments breakdown voltages in a seed-dependent manner. Finally, we show how the equivalent electrical model can be used to assess the total volume of the contact points, the capacitance of the seeds in the packed-bed configuration and we demonstrate that germinative effects can be induced by plasma on four of the six agronomical specimens.
We employ electric circuit networks to study topological states of matter in non-Hermitian systems enriched by parity-time symmetry $mathcal{PT}$ and chiral symmetry anti-$mathcal{PT}$ ($mathcal{APT}$). The topological structure manifests itself in the complex admittance bands which yields excellent measurability and signal to noise ratio. We analyze the impact of $mathcal{PT}$ symmetric gain and loss on localized edge and defect states in a non-Hermitian Su--Schrieffer--Heeger (SSH) circuit. We realize all three symmetry phases of the system, including the $mathcal{APT}$ symmetric regime that occurs at large gain and loss. We measure the admittance spectrum and eigenstates for arbitrary boundary conditions, which allows us to resolve not only topological edge states, but also a novel $mathcal{PT}$ symmetric $mathbb{Z}_2$ invariant of the bulk. We discover the distinct properties of topological edge states and defect states in the phase diagram. In the regime that is not $mathcal{PT}$ symmetric, the topological defect state disappears and only reemerges when $mathcal{APT}$ symmetry is reached, while the topological edge states always prevail and only experience a shift in eigenvalue. Our findings unveil a future route for topological defect engineering and tuning in non-Hermitian systems of arbitrary dimension.
Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching power of PCM through the combined approaches of filamentary contacts and thermal confinement. The filamentary contact is formed through an oxidized TiN layer on the bottom electrode, and thermal confinement is achieved using a monolayer semiconductor interface, three-atom thick MoS2. The former reduces the switching volume of the phase change material and yields a 70% reduction in reset current versus typical 150 nm diameter mushroom cells. The enhanced thermal confinement achieved with the ultra-thin (~6 {AA}) MoS2 yields an additional 30% reduction in switching current and power. We also use detailed simulations to show that further tailoring the electrical and thermal interfaces of such PCM cells toward their fundamental limits could lead up to a six-fold benefit in power efficiency.
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band.
Active matter is ubiquitous in biology and becomes increasingly more important in materials science. While numerous active systems have been investigated in detail both experimentally and theoretically, general design principles for functional active materials are still lacking. Building on a recently developed linear response optimization (LRO) framework, we here demonstrate that the spectra of nonlinear active mechanical and electric circuits can be designed similarly to those of linear passive networks.