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Register a new userSeed-packed dielectric barrier device for plasma agriculture: understanding its electrical properties through an equivalent electrical model
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Seeds have been packed in a dielectric barrier device where cold atmospheric plasma has been generated to improve their germinative properties. A special attention has been paid on understanding the resulting plasma electrical properties through an equivalent electrical model whose experimental validity has been demonstrated here. In this model, the interelectrode gap is subdivided into 4 types of elementary domains, according to whether they contain electric charges (or not) and according to their type of medium (gas, seed or insulator). The model enables to study the influence of seeds on the plasma electrical properties by measuring and deducing several parameters (charge per filament, gas capacitance, plasma power, ...) either in no-bed configuration (i.e. no seed in the reactor) or in packed-bed configuration (seeds in the reactor). In that second case, we have investigated how seeds can influence the plasma electrical parameters considering six specimens of seeds (beans, radishes, corianders, lentils, sunflowers and corns). The influence of molecular oxygen (0-100 sccm) mixed with a continuous flow rate of helium (2 slm) is also investigated, especially through filaments breakdown voltages, charge per filament and plasma power. It is demonstrated that such bed-packing drives to an increase in the gas capacitance, to a decrease in the beta-parameter and to variations of the filaments breakdown voltages in a seed-dependent manner. Finally, we show how the equivalent electrical model can be used to assess the total volume of the contact points, the capacitance of the seeds in the packed-bed configuration and we demonstrate that germinative effects can be induced by plasma on four of the six agronomical specimens.
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Simulations and experimental works have been carried out in a complementary way to engineer a basic material target mimicking the same dielectric properties of the human body. It includes a resistor in parallel with a capacitor, whose values (Rh=1500 {Omega} and Ch=100 pF) are estimated in regard of parameters commonly utilized upon in vivo campaigns (frequency=30 kHz, gap=10 mm, high voltage electrode surface=12.6 mm2). This equivalent electrical human body (EEHB) circuit can be used as a reference and realistic target to calibrate electrical properties of therapeutic plasma sources before their utilization on patients. In this letter, we consider a configuration where this EEHB target interacts with a plasma gun (PG). Plasma power measurements performed in such configuration clearly indicate two operating modes depending on the value of the supplied voltage. Hence, the plasma gun generates pulsed atmospheric plasma streams likely to present therapeutic interest for voltages comprised between 3.0 and 8.5 kV while for higher values, transient arcs of thermal plasma are generated and represent substantial risks for the patient.
To analyze the switching dynamics and output performance of a superconducting nanowire single photon detector (SNSPD), the nanowire is usually modelled as an inductor in series with a time-varying resistor induced by absorption of a photon. Our recent experimental results show that, due to the effect of kinetic inductance, for a SNSPD made of a nanowire of sufficient length, its geometry length can be comparable to or even longer than the effective wavelength of frequencies contained in the output pulse. In other words, a superconducting nanowire can behave as a distributed transmission line so that the readout pulse depends on the photon detection location and the transmission line properties of the nanowire. Here, we develop a distributed model for a superconducting nanowire and apply it to simulate the output performance of a long nanowire designed into a coplanar waveguide. We compare this coplanar waveguide geometry to a conventional meander nanowire geometry. The simulation results agree well with our experimental observations. With this distributed model, we discussed the importance of microwave design of a nanowire and how impedance matching can affect the output pulse shape. We also discuss how the distributed model affects the growth and decay of the photon-triggered resistive hotspot.
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Radio-frequency (RF) contacts-which are an example of electrical contacts-are commonly employed on accelerators and nuclear fusion experimental devices. RF contacts with a current load of 2 kA for steady-state operation were designed for application to the International Thermonuclear Experimental Reactor (ITER) device. In contrast to the typical working conditions of general commercial electrical contacts, those of RF contacts employed on fusion devices include high vacuum, high temperature, and neutron radiation. CuCrZr is currently of interest as a base material for the manufacture of louvers of RF contacts, which has excellent thermal and electrical properties and has low creep rate at 250 {textdegree}C. In this study, a hard Au coating (Au-Ni) was electroplated on CuCrZr samples and the samples were then subjected to thermal aging treatment at 250 {textdegree}C for 500 h in order to simulate the vacuum-commissioning process of the ITER. The effects of thermal aging on the hardness, elastic modulus, crystallite size, and compositions of the coating were investigated via microstructural and mechanical characterizations of the coating material. Metal atom migration in different coating layers during thermal aging was characterized and evaluated via scanning electron microscopy/energy dispersive X-ray spectroscopy observations of the cross-sectional surfaces, and the obtained results could be used to directly select the coating thickness for the final RF contact component. The contact resistance-an important parameter of the RF contact-was measured in a dedicated testbed built to simulate fusion reactor conditions between CuCrZr pins and stainless steel plates coated with Au-Ni and Rh, respectively.
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc, of the electroluminescence (EL) shows that the tunneling spin polarization reflects Fe majority spin. Pcirc tracks the Fe magnetization, confirming that the spin-polarized electrons radiatively recombining in the Si originate from the Fe. A rate equation analysis provides a lower bound of 30% for the electron spin polarization in the Si at 5 K.
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