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Register a new userProton Irradiation Damage and Annealing Effects in ON Semiconductor J-Series Silicon Photomultipliers
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Silicon photomultipliers (SiPMs) have become popular light conversion devices in recent years due to their low bias voltage and sensitivity to wavelengths emitted from common scintillating materials. These properties make them particularly attractive for resource-constrained missions such as space-based detector applications. However the space radiation environment is known to be particularly harsh on semiconductor devices, where high particle fluences can degrade performance over time. The radiation hardness of a particular SiPM, manufactured by ON Semiconductor (formally SensL), has yet to be studied with high energy protons, which are native to the space radiation environment. To study these effects we have irradiated groups of two SiPMs to four different fluences of 800 MeV protons delivered by the accelerator at the Los Alamos Neutron Science Center. Fluences of $1.68times10^{9}$, $1.73times10^{10}$, $6.91times10^{10}$, and $1.73times10^{11}$ protons cm$^{-2}$, and their corresponding estimated doses of $0.15$, $1.55$, $6.19$, and $15.5$ kRad, were chosen based on estimates of the potential exposure a SiPM might receive during an interplanetary space mission lasting 10 years. We report the effects these doses have on dark current and the self-annealing time.
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Silicon Photomultipliers with cell-pitch ranging from 12 $mu$m to 20 $mu$m were tested against neutron irradiation at moderate fluences to study their performance for calorimetric applications. The photosensors were developed by FBK employing the RGB-HD technology. We performed irradiation tests up to $2 times 10^{11}$ n/cm$^2$ (1 MeV eq.) at the INFN-LNL Irradiation Test facility. The SiPMs were characterized on-site (dark current and photoelectron response) during and after irradiations at different fluences. The irradiated SiPMs were installed in the ENUBET compact calorimetric modules and characterized with muons and electrons at the CERN East Area facility. The tests demonstrate that both the electromagnetic response and the sensitivity to minimum ionizing particles are retained after irradiation. Gain compensation can be achieved increasing the bias voltage well within the operation range of the SiPMs. The sensitivity to single photoelectrons is lost at $sim 10^{10}$ n/cm$^2$ due to the increase of the dark current.
The Mu2e calorimeter is composed of 1400 un-doped CsI crystals, coupled to large area UV extended Silicon Photomultipliers (SiPMs), arranged in two annular disks. This calorimeter has to provide precise information on energy, timing and position resolutions. It should also be fast enough to handle the high rate background and it must operate and survive in the high radiation environment. Simulation studies estimated that, in the highest irradiated regions, each photo-sensor will absorb a dose of 20 krad and will be exposed to a neutron fluency of 5.5x10^11 n_(1MeV)/cm^2 in three years of running, with a safety factor of 3 included. At the end of 2015, we have concluded an irradiation campaign at the Frascati Neutron Generator (FNG, Frascati, Italy) measuring the response of two different 16 array models from Hamamatsu, which differ for the protection windows and a SiPM from FBK. In 2016, we have carried out two additional irradiation campaigns with neutrons and photons at the Helmholtz-Zentrum Dresden-Rossendorf (HZDR, Dresden, Germany) and at the Calliope gamma irradiation facility at ENEA-Casaccia, respectively. A negligible increment of the leakage current and no gain change have been observed with the dose irradiation. On the other hand, at the end of the neutron irradiation, the gain does not show large changes whilst the leakage current increases by around a factor of 2000. In these conditions, the too high leakage current makes problematic to bias the SiPMs, thus requiring to cool them down to a running temperature of ~0 {deg}C.
Cerium-doped Cs$_2$LiYCl$_6$ (CLYC) and Cs$_2$LiLaBr$_x$Cl$_{6-x}$ (CLLBC) are scintillators in the elpasolite family that are attractive options for resource-constrained applications due to their ability to detect both gamma rays and neutrons within a single volume. Space-based detectors are one such application, however, the radiation environment in space can over time damage the crystal structure of the elpasolites, leading to degraded performance. We have exposed 4 samples each of CLYC and CLLBC to 800 MeV protons at the Los Alamos Neutron Science Center. The samples were irradiated with a total number of protons of 1.3$times$10$^{9}$, 1.3$times$10$^{10}$, 5.2$times$10$^{10}$, and 1.3$times$10$^{11}$, corresponding to estimated doses of 0.14, 1.46, 5.82, and 14.6 kRad, respectively on the CLYC samples and 0.14, 1.38, 5.52, and 13.8 kRad, respectively on the CLLBC samples. We report the impact these radiation doses have on the light output, activation, gamma-ray energy resolution, pulse shapes, and pulse-shape discrimination figure of merit for CLYC and CLLBC.
We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These new sensors have been irradiated at the China Institute of Atomic Energy (CIAE) using 100 MeV proton beam with five different fluences from 7$times10^{14}$ $n_{eq}/cm^2$ up to 4.5$times10^{15}$ $n_{eq}/cm^2$. The result shows the effective doping concentration in the gain layer decreases with the increase of irradiation fluence, as expected by the acceptor removal mechanism. By comparing data and model gives the acceptor removal coefficient $c_{A}$ = $(6.07pm0.70)times10^{-16}~cm^2$, which indicates the NDL sensor has fairly good radiation resistance.
Novel generation of silicon-based photodetectors are attractive alternatives to the traditional phototubes. They offer significant advantages but they present new challenges too. Presence of afterpulses may affect many characteristics of the photodetectors. Simple statistical model of afterpulsing is used to evaluate the contribution to the observed dark count rates, to examine the contribution to the pulse height resolution and to demonstrate the modification of the observed timing properties of the SiPMs.
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