No Arabic abstract
We present the synthesis of D0$_{22}$ Mn$_{3 - delta}$Ga ($delta$ = 0, 1) Heusler alloys by Spark Plasma Sintering method. The single phase Mn$_3$Ga (T$_mathrm{c}$ $simeq$ 780 K) is synthesized, while Mn$_2$Ga (T$_mathrm{c}$ $simeq$ 710 K) is found to coexist with a near-stoichiometric room temperature paramagnetic Mn$_9$Ga$_5$~($approx$ 15 %) phase due to its lower formation energy, as confirmed from our density functional theory (DFT) calculations. The alloys show hard magnetic behavior with large room temperature spontaneous magnetization m$_s$(80 kOe) = 1.63 (0.83) $mu_mathrm{B}$/f.u. and coercivity H$_mathrm{c}$ = 4.28 (3.35) kOe for Mn$_3$Ga (Mn$_2$Ga). The magnetic properties are further investigated till T$_mathrm{c}$ and the H$_mathrm{c}$ (T) analysis by Stoner-Wohlfarth model shows the nucleation mechanism for the magnetization reversal. The experimental results are well supported by DFT calculations, which reveal that the ground state of D0$_{22}$ Mn$_2$Ga is achieved by the removal of Mn-atoms from full Heusler Mn$_3$Ga structure in accordance with half Heusler alloy picture.
Multiferroic BiFeO3 (BFO) / La0.7Sr0.3MnO3 heterostructured thin films were grown by pulsed laser deposition on polished spark plasma sintered LaAlO3 (LAO) polycrystalline substrates. Both polycrystalline LAO substrates and BFO films were locally characterized using electron backscattering diffraction (EBSD), which confirmed the high-quality local epitaxial growth on each substrate grain. Piezoforce microscopy was used to image and switch the piezo-domains, and the results are consistent with the relative orientation of the ferroelectric variants with the surface normal. This high-throughput synthesis process opens the routes towards wide survey of electronic properties as a function of crystalline orientation in complex oxide thin film synthesis.
Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport phenomena. Heusler alloy is a well-known material class showing the half-metallic electronic structure. However, its cubic lattice nature favors in-plane magnetization and thus minimizes the perpendicular magnetic anisotropy (PMA), in general. This study focuses on an inverse-type Heusler alloy, Mn$_{2-delta}$CoGa$_{1+delta}$ (MCG) with a small off-stoichiometry ($delta$) , which is expected to be a half-metallic material. We observed relatively large uniaxial magnetocrystalline anisotropy energy ($K_mathrm{u}$) of the order of 10$^5$ J/m$^3$ at room temperature in MCG films with a small tetragonal distortion of a few percent. A positive correlation was confirmed between the $c/a$ ratio of lattice constants and $K_mathrm{u}$. Imaging of magnetic domains using Kerr microscopy clearly demonstrated a change in the domain patterns along with $K_mathrm{u}$. X-ray magnetic circular dichroism (XMCD) was employed using synchrotron radiation soft x-ray beam to get insight into the origin for PMA. Negligible angular variation of orbital magnetic moment ($Delta m_mathrm{orb}$) evaluated using the XMCD spectra suggested a minor role of the so-called Brunos term to $K_mathrm{u}$. Our first principles calculation reasonably explained the small $Delta m_mathrm{orb}$ and the positive correlation between the $c/a$ ratio and $K_mathrm{u}$. The origin of the magnetocrystalline anisotropy was discussed based on the second-order perturbation theory in terms of the spin-orbit coupling, claiming that the mixing of the occupied $uparrow$- and the unoccupied $downarrow$-spin states is responsible for the PMA of the MCG films.
The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn$_{1.63}$Ga junction by hard x-ray photoelectron spectroscopy (HAXPES). The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn--Ga film strongly suppresses the oxidation of gallium.
We investigated theoretically electronic and magnetic properties of the perovskite material SrCoO$_{3-delta}$ with $deltaleq 0.15$ using a projector-augmented plane-wave method and a Greens function method. This material is known from various experiments to be ferromagnetic with a Curie temperature of 260$,$K to 305$,$K and a magnetic moment of 1.5${,mu_text{B}}$ to 3.0${,mu_text{B}}$. Applying the magnetic force theorem as it is formulated within Greens function method, we calculated for SrCoO$_{3-delta}$ the magnetic exchange parameters and estimated the Curie temperature. Including correlation effects by an effective $U$ parameter within the GGA$+U$ approach and verifying this by hybrid functional calculations, we obtained the Curie temperatures in dependence of the oxygen deficiency close to the experimental values.
The {em around-mean-field} LSDA+U correlated band theory is applied to investigate the electronic and magnetic structure of $fcc$-Pu-Am alloys. Despite a lattice expansion caused by the Am atoms, neither tendency to 5$f$ localization nor formation of local magnetic moments on Pu atoms in Pu-Am alloys are found. The $5f$-manifolds in the alloys are calculated being very similar to a simple weighted superposition of elemental Pu and Am $5f$-states.