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Register a new userThe grain-size effect on thermal conductivity of uranium dioxide
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We have investigated the grain boundary scattering effect on the thermal transport behavior of uranium dioxide (UO$_2$). The polycrystalline samples having different grain-sizes (0.125, 1.8, and 7.2 $mu$m) have been prepared by spark plasma sintering technique and characterized by x-ray powder diffraction (XRD), scanning electron microscope (SEM), and Raman spectroscopy. The thermal transport properties (the thermal conductivity and thermoelectric power) have been measured in the temperature range 2-300~K and the results were analyzed in terms of various physical parameters contributing to the thermal conductivity in these materials in relation to grain-size. We show that thermal conductivity decreases systematically with lowering grain-size in the temperatures below 30 K, where the boundary scattering dominates the thermal transport. At higher temperatures more scattering processes are involved in the heat transport in these materials, making the analysis difficult. We determined the grain boundary Kapitza resistance that would result in the observed increase in thermal conductivity with grain size, and compared the value with Kapitza resistances calculated for UO$_2$ using molecular dynamics from the literature.
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Uranium mononitride, UN, is considered a potential accident tolerant fuel due to its high uranium density, high thermal conductivity, and high melting point. Compared with the relatively inert UO2, UN has a high reactivity in water, however, studies have not considered the significant effect of radiation, which is known to cause corrosion of UO2. This study uses 0.1 M H2O2 to simulate the effects of water radiolysis in order to compare the radiolytic corrosion rates of UO2, UN, and U2N3 thin films at room temperature. X-ray reflectivity was used to investigate the changes in film morphology as a function of H2O2 exposure time, allowing changes in film thickness and roughness to be observed on the Angstrom length-scale. Results showed significant differences between UO2, UN, and U2N3, with corrosion rates of 0.083(3), 0.020(4), and 0.47(8) A/s, respectively, showing that UN corrodes more slowly than UO2 in 0.1 M H2O2.
We study the size dependence of thermal conductivity in nanoscale semiconducting systems. An analytical formula including the surface scattering and the size confinement effects of phonon transport is derived. The theoretical formula gives good agreements with the existing experimental data for Si and GaAs nanowires and thin films.
D. J. Antonio et al. report an x-ray diffraction experiment on uranium dioxide at high-magnetic field and low temperature. The authors have apparently not realized that the diffraction data actually shows unambiguously the presence of a rhombohedral distortion induced by the field at low temperature and the presence of more than one domain. Our note correctly analyses their data. The crystallographic analysis we perform is based on simple arguments with respect to plane spacings in slightly distorted cubic materials. Similar studies have been reported in many materials over the last 50 years. Our analysis explains quantitatively the observations, the presence of the two peaks (the appearance of which the authors regard as unexpected) and their different variations with respect to the applied field, which is a simple consequence of the conservation of atomic volume.
Thermoelectric properties of polycrystalline p-type ZrTe5 are reported in temperature (T) range 2 - 340 K. Thermoelectric power (S) is positive and reaches up to 458 uV/K at 340 K on increasing T. The value of Fermi energy 16 meV, suggests low carrier density of ~ 9.5 X 10^18 cm-3. A sharp anomaly in S data is observed at 38 K, which seems intrinsic to p-type ZrTe5. The thermal conductivity value is low (2 W/m-K at T = 300 K) with major contribution from lattice part. Electrical resistivity data shows metal to semiconductor transition at T ~ 150 K and non-Arrhenius behavior in the semiconducting region. The figure of merit zT (0.026 at T = 300 K) is ~ 63% higher than HfTe5 (0.016), and better than the conventional SnTe, p-type PbTe and bipolar pristine ZrTe5 compounds.
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strain state, and oxygen deficiency. Despite substantial differences in the magnetic properties and magnitudes of the anomalous Hall conductivity $sigma_{xy}^{rm AHE}$ and the longitudinal conductivity $sigma_{xx}$ over several orders of magnitude, a universal scaling relation $sigma_{xy}^{rm AHE} propto sigma_{xx}^{alpha}$ with $alpha = 1.69 pm 0.08$ was found for all investigated samples. Our results are in agreement with recent theoretical and experimental findings for ferromagnetic metals in the dirty limit, where transport is by metallic conduction. We find the same scaling relation for magnetite, where hopping transport prevails. The fact that this relation is independent of crystallographic orientation, Zn content, strain state, and oxygen deficiency suggests that it is universal and particularly does not depend on the nature of the transport mechanism.
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