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Register a new userAcoustic spin-Chern insulator induced by synthetic spin-orbit coupling with spin conservation breaking
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Topologically protected surface modes of classical waves hold the promise to enable a variety of applications ranging from robust transport of energy to reliable information processing networks. The integer quantum Hall effect has delivered on that promise in the electronic realm through high-precision metrology devices. However, both the route of implementing an analogue of the quantum Hall effect as well as the quantum spin Hall effect are obstructed for acoustics by the requirement of a magnetic field, or the presence of fermionic quantum statistics, respectively. Here, we use a two-dimensional acoustic crystal with two layers to mimic spin-orbit coupling, a crucial ingredient of topological insulators. In particular, our setup allows us to free ourselves of symmetry constraints as we rely on the concept of a non-vanishing spin Chern number. We experimentally characterize the emerging boundary states which we show to be gapless and helical. Moreover, in an H-shaped device we demonstrate how the transport path can be selected by tuning the geometry, enabling the construction of complex networks.
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Spin-orbit coupling (SOC) describes the relativistic interaction between the spin and momentum degrees of freedom of electrons, and is central to the rich phenomena observed in condensed matter systems. In recent years, new phases of matter have emerged from the interplay between SOC and low dimensionality, such as chiral spin textures and spin-polarized surface and interface states. These low-dimensional SOC-based realizations are typically robust and can be exploited at room temperature. Here we discuss SOC as a means of producing such fundamentally new physical phenomena in thin films and heterostructures. We put into context the technological promise of these material classes for developing spin-based device applications at room temperature.
We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by doping with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi doping changes magnetoconductance from weak localization to the crossover between weak localization and weak antilocalization. The elastic diffusion length, phase coherence length and spin-orbit coupling length in Si with and without Bi implantation are estimated, and the spin-orbit coupling length after the Bi doping becomes the same order of magnitude (Lso = 54 nm) with the phase coherence length (L{phi} = 35 nm) at 2 K. This is an experimental proof that the spin-orbit coupling strength in Si thin film is tunable by doping with heavy metals.
We report on the observation of the acoustic spin Hall effect that facilitates lattice motion induced spin current via spin orbit interaction (SOI). Under excitation of surface acoustic wave (SAW), we find a spin current flows orthogonal to the propagation direction of a surface acoustic wave (SAW) in non-magnetic metals. The acoustic spin Hall effect manifests itself in a field-dependent acoustic voltage in non-magnetic metal (NM)/ferromagnetic metal (FM) bilayers. The acoustic voltage takes a maximum when the NM layer thickness is close to its spin diffusion length, vanishes for NM layers with weak SOI and increases linearly with the SAW frequency. To account for these results, we find the spin current must scale with the SOI and the time derivative of the lattice displacement. Such form of spin current can be derived from a Berry electric field associated with time varying Berry curvature and/or an unconventional spin-lattice interaction mediated by SOI. These results, which imply the strong coupling of electron spins with rotating lattices via the SOI, show the potential of lattice dynamics to supply spin current in strong spin orbit metals.
We report magnetotransport properties of BaZnBi$_{2}$ single crystals. Whereas electronic structure features Dirac states, such states are removed from the Fermi level by spin-orbit coupling (SOC) and consequently electronic transport is dominated by the small hole and electron pockets. Our results are consistent with three dimensional (3D) but also with quasi two dimensional (2D) portions of the Fermi surface. The spin-orbit coupling-induced gap in Dirac states is much larger when compared to isostructural SrMnBi$_{2}$. This suggests that not only long range magnetic order but also mass of the alkaline earth atoms A in ABX$_{2}$ (A = alkaine earth, B = transition metal and X=Bi/Sb) are important for the presence of low-energy states obeying the relativistic Dirac equation at the Fermi surface
The existence of a spin-orbit coupling (SOC) induced by the gradient of the effective mass in low-dimensional heterostructures is revealed. In structurally asymmetric quasi-two-dimensional semiconductor heterostructures the presence of a mass gradient across the interfaces results in a SOC which competes with the SOC created by the electric field in the valence band. However, in graded quantum wells subjected to an external electric field, the mass-gradient induced SOC can be finite even when the electric field in the valence band vanishes.
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