No Arabic abstract
The existence of a spin-orbit coupling (SOC) induced by the gradient of the effective mass in low-dimensional heterostructures is revealed. In structurally asymmetric quasi-two-dimensional semiconductor heterostructures the presence of a mass gradient across the interfaces results in a SOC which competes with the SOC created by the electric field in the valence band. However, in graded quantum wells subjected to an external electric field, the mass-gradient induced SOC can be finite even when the electric field in the valence band vanishes.
When a local and attractive potential is quenched in a nanowire, the spectrum changes its topology from a purely continuum to a continuum and discrete portion. We show that, under appropriate conditions, this quench leads to stable coherent oscillations in the observables time evolution. In particular, we demonstrate that ballistic nanowires with spin-orbit coupling (SOC) exposed to a uniform magnetic field are especially suitable to observe this effect. Indeed, while in ordinary nanowires the effect occurs only if the strength $U_0$ of the attractive potential is sufficiently strong, even a weak value of $U_0$ is sufficient in SOC nanowires. Furthermore, in these systems coherent oscillations in the spin sector can be generated and controlled electrically by quenching the gate voltage acting on the charge sector. We interpret the origin of this phenomenon, analyze the effect of variation of the chemical potential and the switching time of the quenched attractive potential, and address possible implementation schemes.
The presence of edges locally breaks the inversion symmetry of heterostructures and gives rise to lateral (edge) spin-orbit coupling (SOC), which, under some conditions, can lead to the formation of helical edge states. If the edge SOC is strong enough, the helical edge states can penetrate the band-gap and be energetically isolated from the bulk-like states. As a result backward scattering is suppressed, dissipationless helical edge channels protected against time-inversion symmetric perturbations emerge, and the system behaves as a 2D topological insulator (TI). However, unlike in previous works on TIs, the mechanism proposed here for the creation of protected helical edge states relies on the strong edge SOC rather than on band inversion.
Spin-orbit coupling (SOC) describes the relativistic interaction between the spin and momentum degrees of freedom of electrons, and is central to the rich phenomena observed in condensed matter systems. In recent years, new phases of matter have emerged from the interplay between SOC and low dimensionality, such as chiral spin textures and spin-polarized surface and interface states. These low-dimensional SOC-based realizations are typically robust and can be exploited at room temperature. Here we discuss SOC as a means of producing such fundamentally new physical phenomena in thin films and heterostructures. We put into context the technological promise of these material classes for developing spin-based device applications at room temperature.
We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by doping with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi doping changes magnetoconductance from weak localization to the crossover between weak localization and weak antilocalization. The elastic diffusion length, phase coherence length and spin-orbit coupling length in Si with and without Bi implantation are estimated, and the spin-orbit coupling length after the Bi doping becomes the same order of magnitude (Lso = 54 nm) with the phase coherence length (L{phi} = 35 nm) at 2 K. This is an experimental proof that the spin-orbit coupling strength in Si thin film is tunable by doping with heavy metals.
Topologically protected surface modes of classical waves hold the promise to enable a variety of applications ranging from robust transport of energy to reliable information processing networks. The integer quantum Hall effect has delivered on that promise in the electronic realm through high-precision metrology devices. However, both the route of implementing an analogue of the quantum Hall effect as well as the quantum spin Hall effect are obstructed for acoustics by the requirement of a magnetic field, or the presence of fermionic quantum statistics, respectively. Here, we use a two-dimensional acoustic crystal with two layers to mimic spin-orbit coupling, a crucial ingredient of topological insulators. In particular, our setup allows us to free ourselves of symmetry constraints as we rely on the concept of a non-vanishing spin Chern number. We experimentally characterize the emerging boundary states which we show to be gapless and helical. Moreover, in an H-shaped device we demonstrate how the transport path can be selected by tuning the geometry, enabling the construction of complex networks.