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Intense white luminescence in ZnTe embedded porous silicon

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 Added by Osvaldo de Melo
 Publication date 2019
  fields Physics
and research's language is English




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Porous silicon layers were embedded with ZnTe using the isothermal close space sublimation technique. The presence of ZnTe was demonstrated using cross-sectional energy dispersive spectroscopy maps. ZnTe embedded samples present intense room temperature photoluminescence along the whole visible range. We ascribe this PL to ZnTe nanocrystals of different sizes grown on the internal pore surface. Such crystals, with different orientations and sizes, were observed in transmission electron microscopy images, while transmission electron diffraction images of the same regions reveal ZnTe characteristic patterns.

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Isothermal Close Space Sublimation (ICSS) technique was used for embedding porous silicon (PS) films with ZnTe. It was studied the influence of the preparation conditions and in particular of a chemical etching step before the ZnTe growth, on the composition profile and final porosity of ZnTe embedded PS. The structure of the embedded material was determined by x-ray diffraction analysis while the thickness of the samples was determined by scanning electron microscopy (SEM). Rutherford backscattering (RBS) and Energy Dispersive (EDS) spectrometries allowed determining the composition profiles. We conclude that the etching of the PS surface before the ZnTe growth has two main effects: the increase of the porosity and enhancing the reactivity of the inner surface. It was observed that both effects benefit the filling process of the pores. Since RBS and EDS cannot detect the porosity in the present system, we explore the evolution of porosity by the fitting of the UV-VIS reflectance spectra. The atomic percent determined with this method was in relatively good agreement with that obtained from the RBS and EDS measurements.
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