Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userThermal conductivity of disordered porous membranes
327
0
0.0
(
0
)
Added by
Marianna Sledzinska
Publication date
2018
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
We report measurements and Monte Carlo simulations of thermal conductivity of porous 100nm- thick silicon membranes, in which size, shape and position of the pores were varied randomly. Measurements using 2-laser Raman thermometry on both plain membrane and porous membranes revealed more than 10-fold reduction of thermal conductivity compared to bulk silicon and six-fold reduction compared to non-patterned membrane for the sample with 37% filling fraction. Using Monte Carlo solution of the Boltzmann transport equation for phonons we compared different possibilities of pore organization and its influence on the thermal conductivity of the samples. The simulations confirmed that the strongest reduction of thermal conductivity is achieved for a distribution of pores with arbitrary shapes that partly overlap. Up to 15% reduction of thermal conductivity with respect to the purely circular pores was predicted for a porous membrane with 37% filling fraction. The effect of pore shape, distribution and surface roughness is further discussed.
rate research
Read More
Micro/nano porous polymeric material is considered a unique industrial material due to its extremely low thermal conductivity, low density, and high surface area. Therefore, it is necessary to establish an accurate thermal conductivity prediction model suiting their applicable conditions and provide a theoretical basis for expanding of their applications. In this work, the development of the calculation model of equivalent thermal conductivity of micro/nano porous polymeric materials in recent years was summarized. Firstly, it reviews the process of establishing the overall equivalent thermal conductivity calculation model for micro/nano porous polymers. Then, the predicted calculation models of thermal conductivity are introduced according to the conductive thermal conductivity models and the radiative thermal conductivity models separately. In addition, the thermal conduction part is divided into the gaseous thermal conductivity model, solid thermal conductivity model and gas-solid coupling model. Finally, it is concluded that, compared with other porous materials, there are few studies on heat transfer of micro/nano porous polymers, especially on the special heat transfer mechanisms such as scale effects at the micro/nanoscale. In particular, the following aspects of porous polymers still need to be further studied: micro scaled thermal radiation, heat transfer characteristics of special morphologies at the nanoscale, heat transfer mechanism and impact factors of micro/nano porous polymers. Such studies would provide a more accurate prediction of thermal conductivity and a wider application in energy conversion and storage systems.
Porous materials provide a large surface to volume ratio, thereby providing a knob to alter fundamental properties in unprecedented ways. In thermal transport, porous nanomaterials can reduce thermal conductivity by not only enhancing phonon scattering from the boundaries of the pores and therefore decreasing the phonon mean free path, but also by reducing the phonon group velocity. Here we establish a structure-property relationship by measuring the porosity and thermal conductivity of individual electrolessly etched single crystalline silicon nanowires using a novel electron beam heating technique. Such porous silicon nanowires exhibit extremely low diffusive thermal conductivity (as low as 0.33 Wm-1K-1 at 300K for 43% porosity), even lower than that of amorphous silicon. The origin of such ultralow thermal conductivity is understood as a reduction in the phonon group velocity, experimentally verified by measuring the Young modulus, as well as the smallest structural size ever reported in crystalline Silicon (less than 5nm). Molecular dynamics simulations support the observation of a drastic reduction in thermal conductivity of silicon nanowires as a function of porosity. Such porous materials provide an intriguing platform to tune phonon transport, which can be useful in the design of functional materials towards electronics and nano-electromechanical systems.
This study explores the potentialities of Scanning Thermal Microscopy (SThM) technique as a tool for measuring thermal transporting properties of carbon-derived materials issued from thermal conversion of organic polymers, such as the most commonly known polyimide (PI), Kapton. For quantitative measurements, the Null Point SThM (NP-SThM) technique is used in order to avoid unwanted effects as the parasitic heat flows through the air and the probe cantilever. Kapton HN films were pyrolysed in an inert atmosphere at temperatures up to 1200{deg}C to produce carbon-based residues with varying degree of conversion to free sp2 disordered carbon. The thermal conductivity of carbon materials ranges from 0.2 to 2 Wm-1K-1 depending on the temperature of the carbonization process (varied between 500{deg}C and 1200{deg}C). In order to validate the applicability of NP-SThM approach to these materials, the results were compared to those obtained with the three more traditional techniques, namely photo-thermal radiometry, flash laser analysis and micro-Raman thermometry. It was found that NP SThM data are in excellent agreement with previous work using more traditional techniques. We used the NP-SThM technique to differentiate structural heterogeneities or imperfections at the surface of the pyrolysed Kapton on the basis of measured local thermal conductivity.
Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this technique is that the light source (laser) can be used both as heating and excitation source. The variations of the first-order Raman peak position of the freestanding silicon NW with respect to temperature and laser power are carried out. A critical analysis of effective laser power absorbed by exposed silicon NW, the detailed Raman study along with the concept of longitudinal heat distribution in silicon NW, the thermal conductivity of the freestanding silicon NW of 112 nm diameter is estimated to be ~53 W/m.K.
Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from beta-Ga2O3 will be the bottleneck for real-world applications, especially for high power and high frequency devices. Similar to GaN/AlGaN interfaces, beta-(AlxGa1-x)2O3/Ga2O3 heterogeneous structures have been used to form a high mobility two-dimensional electron gas (2DEG) where joule heating is localized. The thermal properties of beta-(AlxGa1-x)2O3/Ga2O3 are the key for heat dissipation in these devices while they have not been studied before. This work reports the first measurement on thermal conductivity of beta-(Al0.1Ga0.9)2O3/Ga2O3 superlattices from 80 K to 480 K. Its thermal conductivity is significantly reduced (5.7 times reduction) at room temperature comparing with that of bulk Ga2O3. Additionally, the thermal conductivity of bulk Ga2O3 with (010) orientation is measured and found to be consistent with literature values regardless of Sn doping. We discuss the phonon scattering mechanism in these structures by calculating their inverse thermal diffusivity. By comparing the estimated thermal boundary conductance (TBC) of beta-(Al0.1Ga0.9)2O3/Ga2O3 interfaces and Ga2O3 maximum TBC, we reveal that some phonons in the superlattices transmit through several interfaces before scattering with other phonons or structural imperfections. This study is not only important for Ga2O3 electronics applications especially for high power and high frequency applications, but also for the fundamental thermal science of phonon transport across interfaces and in superlattices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
